TY  - BOOK
AU  - Abass,A.K.
AU  - Abdullin,KhA.
AU  - Adhikari,M.
AU  - Albers,H.
AU  - Aldzhanov,M.A.
AU  - Aleksandrov,L.N.
AU  - Aleksandrova,M.M.
AU  - Ali,A.R.
AU  - Amelinckx,S.
AU  - Andreeva,O.B.
AU  - Appel,F.
AU  - Arbuzov,V.I.
AU  - Bachert,H.-J.
AU  - Badarinath,K.V.S.
AU  - Bagraev,N.T.
AU  - Bahadur,H.
AU  - Bakker,H.
AU  - Balchaitis,G.
AU  - Baranskii,P.I.
AU  - Barrière,A.S.
AU  - Beister,G.
AU  - Beji,H.
AU  - Berezhkova,G.V.
AU  - Berger,H.
AU  - Bhattacharya,R.S.
AU  - Blank,V.D.
AU  - Bohringer,K.
AU  - Bolzoni,F.
AU  - Borshch,A.A.
AU  - Bostanjoglo,O.
AU  - Brodin,M.S.
AU  - Bryzgalova,N.I.
AU  - Bärner,K.
AU  - Choudhury,K.
AU  - Corbett,J.W.
AU  - Corelli,J.C.
AU  - Couturier,G.
AU  - Das,D.
AU  - Dasgupta,B.B.
AU  - Datt,S.C.
AU  - Dekhtyaruk,N.T.
AU  - Delaey,L.
AU  - Di Giulio,M.
AU  - Elerts,M.A.
AU  - Endruschat,E.
AU  - Ermakov,A.E.
AU  - Flietner,H.
AU  - Frantsuzov,A.A.
AU  - Fromageau,R.
AU  - Gerard,N.
AU  - Gevers,G.
AU  - Golovanova,N.S.
AU  - Goltzene,A.
AU  - Govor,G.A.
AU  - Grabovskis,V.J.
AU  - Gundyrev,V.M.
AU  - Görlich
AU  - Happ,M.
AU  - Hemschik,H.
AU  - Huang,Huei Li
AU  - Ivanov,A.V.
AU  - Jassim,H.A.
AU  - Jog,K.N.
AU  - Juška,G.
AU  - Kadyrov,B.Kh
AU  - Kalbitzer,S.
AU  - Kameneckas,J.
AU  - Kapinos,V.G.
AU  - Kardashev,B.K.
AU  - Keller,J.M.
AU  - Khodyaeva,M.A.
AU  - Kikkawa,S.
AU  - Kitao,M.
AU  - Kleint,C.
AU  - Koizumi,M.
AU  - Korneva,N.N.
AU  - Kornyushkin,N.A.
AU  - Kreislerová,Y.
AU  - Krispin,P.
AU  - Kryszewski,M.
AU  - Kuhrt,Ch
AU  - Kustov,S.B.
AU  - Landuyt,J.van
AU  - Larchev,V.I.
AU  - Lebedev,A.A.
AU  - Lebedev,A.B.
AU  - Lebedev,A.I.
AU  - Leccabue,F.
AU  - Lee,T.C.
AU  - Lemke,H.
AU  - Ligenza,S.
AU  - Lin,Ming Yen
AU  - Liu,X.H.
AU  - Lovey,F.C.
AU  - Lubbes,A.
AU  - Lukyanchikova,N.B.
AU  - Maege,J.
AU  - Magnouche,A.
AU  - Majeid,K.J.
AU  - Majumdar,C.K.
AU  - Melker,A.I.
AU  - Messerschmidt,U.
AU  - Meyer,B.
AU  - Micocci,G.
AU  - Misho,R.H.
AU  - Morita,N.
AU  - Mostafa,F.M.
AU  - Möllmann,K.-P.
AU  - Nakano,K.
AU  - Nikolaev,J.P.
AU  - Panizzieri,R.
AU  - Pareti,L.
AU  - Parshad,R.
AU  - Perstnev,P.P.
AU  - Petrauskas,G.
AU  - Pflueger,R.
AU  - Platonov,P.A.
AU  - Popova,S.V.
AU  - Ptasiewicz-Bak,H.
AU  - Radelaar,S.
AU  - Rai,A.K.
AU  - Rao,K.R.P.M.
AU  - Rashid,M.H.
AU  - Razykov,T.M.
AU  - Rijke,Q.J.A.
AU  - Rogulis,U.T.
AU  - Ruijvek,L.J.v
AU  - Sakalas,A.
AU  - Sanyal,S.P.
AU  - Sato,T.
AU  - Savyak,V.V.
AU  - Schenk,M.
AU  - Schittny,Th
AU  - Schrader,S.
AU  - Schwab,C.
AU  - Semioshko,V.N.
AU  - Serdyuk,V.V.
AU  - Shabanova,I.N.
AU  - Sharma,K.K.
AU  - Shcherbina,L.A.
AU  - Shekhar,S.
AU  - Shimada,M.
AU  - Siciliano,P.
AU  - Simonenko,YuV.
AU  - Singh,R.K.
AU  - Skrotskaya,G.G.
AU  - Spit,F.H.M.
AU  - Srivastava,G.P.
AU  - Stoeff,St
AU  - Streltsov,V.A.
AU  - Subramanian,K.N.
AU  - Surin,B.P.
AU  - Suzuki,K.
AU  - Syassen,K.
AU  - Sánchez,J.L.
AU  - Takeuchi,S.
AU  - Tananaeva,O.I.
AU  - Tendeloo,G.van
AU  - Tepore,A.
AU  - Tognato,R.
AU  - Tolstoi,M.N.
AU  - Uimin,M.A.
AU  - Vaidya,S.N.
AU  - Vaksman,YuF.
AU  - Veliev,R.K.
AU  - Vitol,I.K.
AU  - Vlasenko,L.S.
AU  - Westerveld,J.P.A.
AU  - Yamada,S.
AU  - Yamamoto,T.
AU  - Yoshii,K.
AU  - Zaumseil,P.
AU  - Zemčík,T.
AU  - Zlomanov,V.P.
AU  - Zotov,M.I.
AU  - Čermák,K.
TI  - Physica status solidi / A. 
T2  - Physica status solidi / A.
SN  - 9783112492970
PY  - 2022///]
CY  - Berlin, Boston : 
PB  - De Gruyter, 
KW  - SCIENCE / General
KW  - bisacsh
N1  - Frontmatter --; Contents --; Original Papers --; Pressure-Induced Structural Transition in SrS --; Kinetics of Laser-Induced Crystallization of Amorphous Germanium Films --; Mössbauer Studies of Corrosion and Inhibition --; Lattice properties --; Theory of Melting. III. Nature of the Molten Glasses --; Third-Order Elastic Constants for Divalent Metal Oxides from Model Potentials --; Defects, atomistic aspects --; On the Behaviour oi Interaction of Copper Atoms with Lattice Defects in Quenched and Cold-Worked Ni-Cu Alloys --; Dynamic Characteristics of Radiation Defects in Silicon --; Deformation Studies on Cu-Ni-Sn Spinodal Alloys --; Dislocations in SmS Single Crystals --; Acoustic and Electron Microscopy Study of the Dislocation Structure in MgO Crystals --; Defects in Crystals under Pressure --; Magnetism --; Neutron Diffraction Study of the Spinel CoAlFeO4 --; Magnetic B-T Phase Diagram of Anion Substituted MnAs. Magnetocaloric Experiments --; Mössbauer, Electrical, and Magnetic Studies of the Sn-Doped Ni3Fe Alloy --; Remanent Magnetization in Randomly Distributed Cubic Particles --; Extended electronic states and transitions --; Optical Parameters of Chemically Deposited Tin Disulphide --; The Anisotropy of Refraction Nonlinearity and Vector Self-Diffraction in the Wide-Gap Semiconductors of CdS Type --; Localized electronic states and transitions --; Dotierungseigenschaften von Rhodium und Iridium in Silizium --; U-Shaped Distributions at Semiconductor Interfaces and the Nature of the Related Defect Centres --; Gold Solid Solution Decay in Silicon. II. Optical Nuclear Polarization Data --; Studies of Long-Wave Luminescence of Zinc Selenide Monocrystals --; On the Analysis of Complex Thermally Stimulated Capacitance Curves --; On the Purple and Violet Light Emissions in Thermoluminescing Quartz --; Degeneracy of Activator Energy Levels with Glassy Matrix Intrinsic States --; Electric transport --; Thermally Stimulated Depolarization Currents in Polypropylene Foils --; Relaxation of Tunnel Injection Limited Current in Case of Low Capture Probability --; Drift Mobility oi Holes in TlSbS2 --; Impurity Photoconductivity and Electrical Properties of Pb 1-x-y GexSnyTe Doped with Indium --; Anomalous Skin Effect in a Cylindrical Conductor --; Multiple Trapping Approach to the TSC Drift Experiment --; Hopping Conduction in NiF2 Thin Films as a Function of Their Crystallization Degree and Composition --; Thermoelectric Power of Glassy AS40Se 60-xTex --; Device-related phenomena --; Noise Investigation of the Impact Ionization in GaAs --; Ion Beam Mixing of Alternate Au-Ge Layer with GaAs --; Physical and Chemical Changes in the Surface Layer of GaAs Induced by Recoil Implantation of Al Atoms --; Errata --; On the Nature of Various Stacking Defects in 18R Martensite in Cu-Al Alloys. A Study by High Resolution Electron Microscopy --; Diffusion of Antimony (125Sb) in Polycrystalline Silicon --; Barrier Height and Its Instability in Al-Ultrathin SiO2 -n/p-Si Devices --; Short Notes --; On the Total Free Energy Differences, at Temperatures near the Melting Point, between Liquid Clusters and Liquid Flat Mono-Layers, Containing the Same Number of Atoms and Both Embedded in a F.C.C. Crystal Matrix --; Transition Temperature and Heat of Crystallization of Amorphous Bulk Gallium Antimonide Obtained by Rapid Quenching from the Melt at High Pressure --; Simulation of Recrystallization of the Depleted Zone at the Thermal Spike --; Chemical Bond Peculiarities of Elements in Amorphous Alloy Surface Layers on the Basis of Fe --; The Far Infrared Spectra of MgAl2-xFexO4 Spinel --; Low-Temperature Heat Capacity of ZnGa2S4, ZnGa2Se4, and ZnGa2Te4 Thiogallates --; Effect of High-Temperature Annealing on Phonon-Phonon Relaxation in Transmutationally-Doped Silicon Crystals --; On the Increased Sensitivity of X-Ray Rocking Curve Measurements by Triple-Crystal Diffractometry --; The Influence of Bi on Lattice Parameter and Carrier Concentration of PbTe --; Fracture Model for a Strained Anharmonic Chain Having Atoms with Two Degrees of Freedom --; EPR Monitoring of Annealing Effects in F-Implanted Amorphous Silicon --; Radiation-Enhanced Oxygen-Related Thermal Donor Formation in Neutron-Transmutation-Doped Floating-Zone Silicon --; ε`→ε Transformation in MnAl-C Alloys --; Magnetic Properties of MnAs Single Crystals --; Curie Temperatures of Some Substituted Nd2Fe14B Tetragonal Alloys --; The Effect of Dispersed PLZT Particles on the Electrical Conductivity of Lithium Iodide --; Impurity Photoconductivity of Indium Doped Lead Tin Telluride --; The Resistivity of Dissolved Hydrogen in Palladium and Amorphous Pd80Si20 --; Synthesis and Electrical Properties of LixMg1-xM2O4 (M = Ti, V) (0≤x≤1.0) --; Energy Band Models of n-ZnxCd1-x S—p-CdTe and n-ZnxCd1-x S — p-Si (0≤x≤1) Heterojunctions --; Emission from a Semi-Insulating Layer in AlGaAs-GaAs Double Heterostructures --; Pre-Printed Titles; restricted access; Issued also in print
UR  - https://doi.org/10.1515/9783112492987
UR  - https://www.degruyter.com/isbn/9783112492987
UR  - https://www.degruyter.com/document/cover/isbn/9783112492987/original
ER  -