TY  - BOOK
AU  - Abass,A.K.
AU  - Abramov,V.N.
AU  - Abrikosov,N.Kh
AU  - Ahmed,A.B.
AU  - Akeoune,A.
AU  - Akshak,K.
AU  - Al-Eithan,F.Y.M.
AU  - Al-Ismail,S.A.Y.
AU  - Albers,H.
AU  - Aliev,A.S.
AU  - Aliev,F.K.
AU  - Alonso,J.A.
AU  - Andreev,G.A.
AU  - Arkhipov,V.I.
AU  - Asbrikk,S.
AU  - Atobe,K.
AU  - Babanskaja,I.
AU  - Backs,D.
AU  - Bairamov,A.I.
AU  - Bakek,I.
AU  - Bakker,H.
AU  - Balčaitis,G.
AU  - Barland,M.
AU  - Baubeegek,A.
AU  - Beaudry,B.J.
AU  - Beneš,L.
AU  - Bibiloni,A.G.
AU  - Blythe,H.J.
AU  - Bräunig,D.
AU  - Casajus,A.
AU  - Casalot,A.
AU  - Chakrabarty,D.K.
AU  - Chandra,S.
AU  - Chebotin,V.N.
AU  - Chelyadinskii,A.R.
AU  - Chikichev,S.I.
AU  - Claverie,J.
AU  - De Batist,R.
AU  - Dzhafarov,T.D.
AU  - Fahrner,W.R.
AU  - Fariver,YuG.
AU  - Frauenheim,Th
AU  - Gaktia,R.K.
AU  - Gallego,L.J.
AU  - Garcia,J.A.
AU  - Gaume,F.
AU  - Geilek,H.D.
AU  - Ghosh,B.
AU  - Gierlotka,S.
AU  - Glowacki,B.
AU  - Golovin,A.L.
AU  - Gschneidner,K.A.
AU  - Görlich
AU  - Hamann,C.
AU  - Hassib,A.M.
AU  - Hehl,K.
AU  - Hitzenbekgek,C.
AU  - Hlávka,J.
AU  - Hogarth,C.A.
AU  - Hong,S.H.
AU  - Horobiowski,M.
AU  - Horák,J.
AU  - Ibaev,G.I.
AU  - Ibragimov,A.I.
AU  - Imamov,R.M.
AU  - Iniewski,K.
AU  - Ishio,S.
AU  - Issa,M.A.A.
AU  - Ivanov,A.V.
AU  - Ivanova,L.D.
AU  - Jakubowski,A.
AU  - Januškevičius,Z.
AU  - Jenichkn,B.
AU  - Kalousová,J.
AU  - Kalukhov,V.A.
AU  - Kang,J.S.
AU  - Karalkevičiutè,V.
AU  - Karnthaler,H.P.
AU  - Karpechin,A.I.
AU  - Keek,H.V.
AU  - Khvostantsev,L.G.
AU  - Kirscht,F.G.
AU  - Kittler,M.
AU  - Klikork,J.
AU  - Klikorka,J.
AU  - Knoll,M.
AU  - Kondrashkina,E.A.
AU  - Koptelov,E.A.
AU  - Korne,A.
AU  - Krause,H.
AU  - Krishna,N.Goh
AU  - Kristofik,J.
AU  - Krivolapchuk,V.V.
AU  - Krištofik,J.
AU  - Kubĕnka,J.
AU  - Kuczkowski,A.
AU  - Kwok,C.Y.
AU  - Kätzel,W.
AU  - Köhler,R.
AU  - Lagnel,F.
AU  - Lapraz,D.
AU  - Laschinski,J.R.
AU  - Ling,C.H.
AU  - Litvinov,V.L.
AU  - Login,V.M.
AU  - Lošťak,P.
AU  - Lošťák,P.
AU  - López-García,A.R.
AU  - Lübbes,A.
AU  - Malyshev,S.A.
AU  - Mares,J.J.
AU  - Mareš,J.J.
AU  - Marucco,J.F.
AU  - Matsumori,T.
AU  - Melker,A.I.
AU  - Melnikov,S.L.
AU  - Mercader,R.C.
AU  - Mezrin,V.A.
AU  - Miglierini,M.
AU  - Misho,R.H.
AU  - Miyada-Naborikawa,L.T.
AU  - Musmus,A.A.S.
AU  - Möhllng,W.
AU  - Müller,M.
AU  - Müller,O.G.
AU  - Nakagawa,M.
AU  - Narasimhan,V.
AU  - Neidig,A.
AU  - Niese,S.
AU  - Nietz,V.V.
AU  - Nishimoto,N.
AU  - Novotný,R.
AU  - Nushiro,K.
AU  - Oberschmid,R.
AU  - Orlov,A.I.
AU  - Osinskii,V.I.
AU  - Pal,A.K.
AU  - Palosz,B.
AU  - Pasquevich,A.F.
AU  - Piqueras,J.
AU  - Poumellec,B.
AU  - Pozhidaev,E.D.
AU  - Prasad,K.
AU  - Przedmojski,J.
AU  - Radelaar,S.
AU  - Rao,B.Rama
AU  - Reddy,U.K.
AU  - Remön,A.
AU  - Richter,H.
AU  - Rijke,Q.J.A.
AU  - Rodionov,A.V.
AU  - Rossin,V.V.
AU  - Rossina,T.V.
AU  - Ruijven,L.J.v
AU  - Ryzhkov,M.P.
AU  - Sabharwal,S.C.
AU  - Sadigov,M.S.
AU  - Saenko,V.S.
AU  - Sahu,S.N.
AU  - Sakalas,A.
AU  - Schmalz,K.
AU  - Schroder,D.K.
AU  - Schulson,E.M.
AU  - Schöneich,J.
AU  - Seifert,W.
AU  - Semenov,A.A.
AU  - Sharma,K.K.
AU  - Shaw,D.
AU  - Shevchenko,S.Ya
AU  - Shigetomi,S.
AU  - Sichkar,V.P.
AU  - Sikdar,R.
AU  - Sirdeshmukh,D.B.
AU  - Sitek,J.
AU  - Skivastava,G.P.
AU  - Smid,V.
AU  - Smienov,B.I.
AU  - Sodeika,A.
AU  - Somoza,J.A.
AU  - Spit,F.H.M.
AU  - Stelmakh,V.F.
AU  - Stock,D.
AU  - Storbeck,F.
AU  - Styrkowiec,R.
AU  - Sung,Kim Chil
AU  - Suprun-Belevich,YuR.
AU  - Sveshnikov,YuN.
AU  - Sánchez,F.H.
AU  - Takahashi,M.
AU  - Tazaikt,A.
AU  - Tkachev,V.D.
AU  - Tyutnev,A.P.
AU  - Ukhin,N.A.
AU  - Vannikov,A.V.
AU  - Villeneuve,G.
AU  - Votinský,J.
AU  - Walz,F.
AU  - Weisheit,A.R.
AU  - Westerveld,J.P.A.
AU  - Wipf,H.
AU  - Wolcyez,M.
AU  - Zhilyaev,YuV.
AU  - Šmid,V.
AU  - Štourač,L.
TI  - Physica status solidi / A. 
T2  - Physica status solidi / A.
SN  - 9783112494639
PY  - 2022///]
CY  - Berlin, Boston : 
PB  - De Gruyter, 
KW  - SCIENCE / General
KW  - bisacsh
N1  - Frontmatter --; Author Index --; Contents --; Review Article --; The Pulsed MIS Capacitor: A Critical Review --; Original Papers --; Structure --; Neutron Diffraction by a Mosaic Crystal with Large Crystallite --; A Model of Crystallization Processes Controlled by Temperature Pulses in Amorphous Semiconductors --; Structural and Electrical Properties of the LaCo 1-x MnxO2 and LaCo 1-x FexO3 Systems --; Liquidus Curves of Eutectic Na-K and Na-Cs Systems from Semiempirical Theories of Mixtures --; Double Crystal Topography Compensating for the Strain in Processed Samples --; Determination of Sulphur Coverages on F e ( l l l ) by Means of Quantitative Auger-Electron Spectrometry --; Defects, atomistic aspects --; Fast-Neutron Radiation Damages in Heavily Doped p-Silicon --; Diffusion of Antimony (125Sb) in Polycrystalline Silicon --; Instability Conditions for a Spatially Homogeneous Yoid Distribution in Irradiated Metals --; H and D Diffusion in Y and Nb in the Presence of a Temperature Gradient --; Contrast Analysis of Intrinsic and Extrinsic Stacking Faults in H.C.P. Cobalt --; Conduction Electron Spin Resonance of Blue Sodalite --; Irradiation-Induced Aggregate Centers in Single Crystal A1203 --; The Effect of Temperature on Dislocation Structures in Ni3Al --; The Chemical Diffusion of In in Hg 0.8 Cd 0.2 Te --; Effect of Plastic Deformation on the Density of Mg-Doped LiF Crystals --; Low-Temperature Internal Friction Peaks in Pure Zirconium Deformed at 300 K --; Ordering of Defects, Thermodynamic and Transport Properties of Solid Oxide Electrolytes with Fluorite Structure --; Magnetism --; The Magnetic Relaxation Spectrum of Plastically Deformed Non-Oriented Iron-Silicon Steel in the Temperature Bange 200 to 800 K --; Extended electronic states and transitions --; Indirect Electronic Transitions in Single Crystals of Triglycine Sulfate By --; Localized electronic states and transitions --; Application of the Fractional Glow Technique in the Analysis of a Complex Thermoluminescence Pattern --; Annealing-Induced Changes in the Photoluminescence of Deformed CaO Single Crystals --; EPR Studies of Dimensionality in Copper Calcium Acetate Hexahydrate --; On the Thermoluminescent Mechanism of a Calcium Fluorapatite Single Crystal Doped with Mn 2+ --; Electrical and Optical Properties of Non-Crystalline As-Se-Cd Thin Films --; Absorption Centers of Bi12GeO20 and Bi12SiO20 Crystals --; Propriétés structurales, magnétiques et électriques des oxyfluorures V 1-x MxO 2-2x F2x (M = Mg, Ni) --; Electric transport --; Photo-Generated Carriers in Structures with Nonlinear Band-Gap Changes --; Effect of Multiple Trapping on Photoreceptor Discharge Characteristics under the Condition of Surface Carrier Generation --; Kinetic Properties and Phase Transitions in Sb2Te3 under Hydrostatic Pressure up to 9 GPa --; Dose Effects in Transient Radiation-Induced Conductivity in Polymers --; Electrodeposited Tungsten Selenide Films II. Optical, Electrical, Electrochemical Characterization and Photoelectrochemical Solar Cell Studies --; The Effect of Pressure on Conductivity and Permittivity of As2Te3-Based Glasses --; Damage Profiles after 50 to 500 MeV Ion Implantation as Deduced from Thyristor Leakage Currents --; Trap Induction and Breakdown Mechanism in SiO2 Films --; Electron Spin Resonance Measurements and Electrical Characteristics, before and after Electroforming, of Thin Films of Si0/Nb205 and Nb2O5 --; Electron Transport in TiO 2-x at Intermediate Temperatures 300 K < T < 1500 K --; Device-related phenomena --; Technical Method of Determination of the Interface Trap Density --; On the Intrinsic lettering in Cu-Contaminated Cz-Si --; Barrier Height and Its Instability in Al-Ultrathin SiO2-n/p-Si Devices --; Errata --; X-Ray Bond-Type Diffractometer Investigations on V305 in the Temperature Interval 298 to 480 K Including the Phase Transition Temperature Tt = 428 K --; Short Notes --; Cobaltocene Intercalate of the Layered SnSe2 --; Absolute Measurements of Lattice Spacings in Surface Layers of Crystals --; X-Ray Thermal Investigations of Cadmium Iodide Single Crystals --; Influence of Temperature of Diffusion Growth and Morphology of Nb3Sn Superconducting Layer on the Value of the Pinning Force --; The Influence of Particle Sizes on the Oxidation Kinetics of AgSn Alloys Studied by Mossbauer Spectroscopy --; Space Correlation of Microdefects with Recombination of Excess Carriers inCZ-Si --; Formation of the F.C.C. Phase in Fe-C Alloys by Rapid Quenching --; Mossbauer Spectroscopy on Amorphous FexNi 80-x B20 after Neutron Irradiation --; A New Method for Measurement of Stress in the Neighbourhood of Window Edges in Multiple Layers --; X-Ray Debye Temperature of Ytterbium --; Relative Hydrogen Content in Plasma-Enhanced CVD Silicon Nitride Films: Substrate Temperature Dependence and Effect of Thermal Annealing --; Diffusion of Boron Implanted into Silicon --; Interatomic Bond Rupture in the System of Two Coupled Anharmonic Chains with a Weak Interaction --; Properties of Sb2Te3 Single Crystals Doped with Tl Atoms --; The Investigation of a Transition Layer in Epitaxial GaAs by the Low Temperature Photoluminescence Technique --; The Nature of Acceptor Centres in Zinc and Cadmium Diphosphide --; On the Nature of Energy Levels in ZnGeP2 --; Axial ΔM = ±3 and Cubic Δm = ±1 Forbidden Transitions in the EPR Spectrum of Mn 2+ in ZnS --; Photoluminescence Spectra of Si-Implanted G2As --; Electrical Conductivity of NH4H2PO4 Single Crystal --; Peierls Transition and Fluctuation Conductivity in Thin Lead-Phthalocyanine (PbPc) Films --; The Effect of Substrate on the Electrical Properties of As2S3 Films --; Photoconductivity of Te-Se-Au and Te-Se-Cd Structures --; Short-Pulsed Alloying of Contacts onGaAs --; Photoelectrochemical Solar Cells with Semiconducting Polymers Prepared by Modification of Polyvinylchloride PVC and Polytetrafluoroethylene PTFE2 --; Erratum --; The Influence of Isoelectronic Impurities on Intrinsic Deep Levels in Liquid Phase Epitaxial Gallium Arsenide --; The Interaction between Moving Domain Walls in Rochelle Salt Crystals --; Pre-Printed Titles; restricted access; Issued also in print
UR  - https://doi.org/10.1515/9783112494646
UR  - https://www.degruyter.com/isbn/9783112494646
UR  - https://www.degruyter.com/document/cover/isbn/9783112494646/original
ER  -