TY  - BOOK
AU  - Ageev,V.
AU  - Akchulakov,M.T.
AU  - Albert,M.
AU  - Albrecht,J.
AU  - Aleksandrov,L.N.
AU  - Aleshin,A.N.
AU  - Aliev,V.Sh
AU  - Antropov,A.lf
AU  - Arbuzov,V.Y.
AU  - Artsimovich,M.V.
AU  - Ascheron,C.
AU  - Bachmann,T.
AU  - Baghaev,V.N.
AU  - Baither,D.
AU  - Bakaj,A.S.
AU  - Balandin,V.Iu
AU  - Baljtjba,V.I.
AU  - Baltramiejünas,R.
AU  - Bandurin,YuA.
AU  - Banisch,R.
AU  - Barabanenkov,M.Y.
AU  - Baranov,A.N.
AU  - Bartl,Rolf-Reiner
AU  - Bartsch,H.
AU  - Baryakhtar,I.V.
AU  - Bayadilov,E.M.
AU  - Becker,S.
AU  - Belousov,V.T.
AU  - Benyagoub,A.
AU  - Berova,D.
AU  - Bertolotti,M.
AU  - Bialoskozewski,J.
AU  - Bischoff,L.
AU  - Blochwitz,C.
AU  - Bobeth,M.
AU  - Bobitski,YaV.
AU  - Bogdenovich,B.Yu
AU  - Brauns,B.
AU  - Budinavičius,J.
AU  - Bugiel,E.
AU  - Bumay,YuA.
AU  - Burenkov,A.F.
AU  - Busin,Y.G.
AU  - Byzhnitsyn,A.B.
AU  - Bärinann,J.
AU  - Cestari,C.
AU  - Checha,V.P.
AU  - Chelnokov,V.E.
AU  - Chernakova,A.
AU  - Chernenko,S.V.
AU  - Choi,G.H.
AU  - Choi,Kong Hyon
AU  - Choupyatova,L.
AU  - Chudoba,T.
AU  - Cháb,V.
AU  - Claverie,A.
AU  - Climent,A.
AU  - Craciun,V.
AU  - Dancheva,E.
AU  - Danilin,A.B.
AU  - Danilovich,J.
AU  - De Veirman,Ann
AU  - Deltschew,R.
AU  - Dement’ev,B.P.
AU  - Demkovich,I.V.
AU  - Deshkovskaya,A.A.
AU  - Dietsch,R.
AU  - Dietze,H.J.
AU  - Dilk,I.A.
AU  - Domanevskii,D.S.
AU  - Domanewskii,D.S.
AU  - Domorod,N.E.
AU  - Donnet,C.
AU  - Drako,V.M.
AU  - Drandarov,Novak
AU  - Drechsler,L.
AU  - Driesel,W.
AU  - Drigo,A.V.
AU  - Dudonis,J.
AU  - Dvurechenskii,A.V.
AU  - Dvurechenskii,A.V.
AU  - Dvurechensky,A.V.
AU  - Emiraliev,A.
AU  - Eolikaaakas,V.S.
AU  - Erfurth,M.
AU  - Erikhodko,I.I.
AU  - Evseev,B.S.
AU  - Feodorov,A.N.
AU  - Ferrari,A.
AU  - Feudel,T.
AU  - Filimonov,YuV.
AU  - Fischer,K.
AU  - Furmonavičius,D.
AU  - Gancharik,T.S.
AU  - Garapadskii,A.A.
AU  - Gavrilov,M.M.
AU  - Gaška,R.
AU  - Geiler,H.D.
AU  - Geisler,V.A.
AU  - Geßner,T.
AU  - Gilpérez,J.M.
AU  - Goltsev,V.P.
AU  - Gorbachenko,S.G.
AU  - Gorin,S.N.
AU  - Gotra,Z.Fu
AU  - Gotra,Z.Yu
AU  - Grande,I.Y.
AU  - Gribkovskii,R.V.
AU  - Grigorjev,L.S.
AU  - Groetzschel,R.
AU  - Grotzachel,F.
AU  - Grótzschel,R.
AU  - Grötzschel,R.
AU  - Grünewald,W.
AU  - Gunot,U.
AU  - Gupta,A.
AU  - Gusakov,G.M.
AU  - Gusinsky,G.M.
AU  - Guzman,L.
AU  - Gänsicke,F.
AU  - Gärtner,K.
AU  - Götz,G.
AU  - Hee,V.
AU  - Heera,V.
AU  - Helming,K.
AU  - Hemment,P.L.F.
AU  - Henke,D.
AU  - Hentschel,E.
AU  - Hentschel,R.
AU  - Hertens,A.
AU  - Hesse,K.
AU  - Hevesi,I.
AU  - Hevolin,T.H.
AU  - Heydenreich,J.
AU  - Hlávka,J.
AU  - Hoehl,D.
AU  - Hoeppner,K.
AU  - Hoffmann,W.
AU  - Hohauth,K.
AU  - Hohmuth,Karl
AU  - Horoderiski,A.
AU  - Höfner,P.
AU  - Hörig,W.
AU  - Hüller,J.
AU  - Itin,V.I.
AU  - Ivanov,O.M.
AU  - Ivlev,G.D.
AU  - Iwaki,Masaya
AU  - Jiřfček,P.
AU  - Jiřífiček,P.
AU  - Johansen,H.
AU  - Kachurin,G.A.
AU  - Kaczanowski,J.
AU  - Kagadey,V.A.
AU  - Kalinushkin,V.P.
AU  - Kanter,B.Z.
AU  - Kasko,I.V.
AU  - Kazak,L.A.
AU  - Kazdaev,KhR.
AU  - Kejhar,Martin
AU  - Kelly,Roger
AU  - Keßler,G.
AU  - Khabelaehvili,I.D.
AU  - Khabelashvili,I.D.
AU  - Khaibullin,I.B.
AU  - Khodasevich,V.V.
AU  - Khodaseyich,V.V.
AU  - Khomsevich,V.V.
AU  - Khytko,V.I.
AU  - Knothe,P.
AU  - Koch,E.
AU  - Kogler,R.
AU  - Kolltsch,A.
AU  - Kolodii,V.N.
AU  - Kolshlbaeva,G.H.
AU  - Kolyadenko,S.H.
AU  - Kolyadenko,S.N.
AU  - Komar,V.P.
AU  - Komarov,F.F.
AU  - Komarov,P.P.
AU  - Komarovsky,I.A.
AU  - Konopljanik,G.G.
AU  - Konov,V.I.
AU  - Kopchenov,V.I.
AU  - Korenev,S.A.
AU  - Korobeinlkov,V.P.
AU  - Korotov,V.F.
AU  - Korshunov,F.P.
AU  - Kostjunin,A.A.
AU  - Kothari,D.C.
AU  - Kotljarevsky,M.B.
AU  - Kotte,R.
AU  - Kreißig,U.
AU  - Krjuchkov,YuYu
AU  - Krynicki,J.
AU  - Kubátová,J.
AU  - Kuclriavtsev,E.M.
AU  - Kukovitsky,E.F.
AU  - Kulikauskas,V.S.
AU  - Kulyasova,O.A.
AU  - Kuokštis,E.
AU  - Kuroohkina,T.V.
AU  - Kuzemchenko,T.A.
AU  - Kuzmichov,A.V.
AU  - Kuzmin,O.S.
AU  - Küchler,R.
AU  - Landi,E.
AU  - Langner,J.
AU  - Laschena,M.
AU  - Lebedeva,N.I.
AU  - Leggieri,G.
AU  - Lehmann,D.
AU  - Lemke,H.
AU  - Lenkeit,K.
AU  - Leshchenko,M.E.
AU  - Leshchenko,M.E.
AU  - Ligachev,A.E.
AU  - Limanov,A.B.
AU  - Linnros,Jan
AU  - Liu,Bai-Xin
AU  - Luches,A.
AU  - Lukeš,I.
AU  - Lutterotti,L.
AU  - Lyaenko,V.S.
AU  - Lychagin,D.V.
AU  - Lykov,S.V.
AU  - Lysenko,EhV.
AU  - Lysenko,V.S.
AU  - Lämmel,B.
AU  - Makarov,V.H.
AU  - Makarov,V.N.
AU  - Makhmudov,M.A.
AU  - Malinin,A.A.
AU  - Maller,H.
AU  - Manenkov,A.A.
AU  - Manzhosov,YuA.
AU  - Marest,G.
AU  - Martino,M.
AU  - Martínez-Duart,J.M.
AU  - Maslakov,A.I.
AU  - Matthai,J.
AU  - Mesyats,G.A.
AU  - Metzig,K.
AU  - Mihailescu,I.N.
AU  - Mikhailova,G.N.
AU  - Miller,B.
AU  - Milutin,V.M.
AU  - Minaev,S.A.
AU  - Miotello,A.
AU  - Mogilnik,I.F.
AU  - Moncoffre,N.
AU  - Mordkovich,V.N.
AU  - Muller,R.
AU  - Murzin,I.G.
AU  - Musatova,L.V.
AU  - Müller,A.
AU  - Müller,H.
AU  - Nachring,F.K.
AU  - Naehring,F.K.
AU  - Nanai,L.
AU  - Nazarov,A.N.
AU  - Neahov,F.G.
AU  - Neelmeijer,C.
AU  - Netikšis,V.
AU  - Neubert,F.
AU  - Neumann,H.
AU  - Nevolin,T.N.
AU  - Nikitenkov,N.N.
AU  - Niklforov,A.I.
AU  - Nikolov,Borlslav
AU  - Nikonov,A.A.
AU  - Novikov,A.
AU  - Novikov,A.P.
AU  - Novikov,P.L.
AU  - Novikova,G.M.
AU  - Oang,Quoc Chung
AU  - Orlenko,V.F.
AU  - Ortlepp,H.G.
AU  - Otto,G.
AU  - Otto,Th
AU  - Ozhur,G.E.
AU  - Ozur,G.E.
AU  - Panknin,D.
AU  - Panzner,M.
AU  - Pattachov,TaV.
AU  - Pavienko,A.A.
AU  - Pavlovich,V.N.
AU  - Peksheva,T.E.
AU  - Perrière,J.
AU  - Petrauskas,M.
AU  - Petrov,S.A.
AU  - Petrov,V.A.
AU  - Petukhov,V.Yu
AU  - Pham,M.T.
AU  - Pichugin,V.F.
AU  - Piekoszewski,J.
AU  - Pirrwitz,A.
AU  - Pivovar,V.S.
AU  - Plotnikov,A.E.
AU  - Plotnikov,S.V
AU  - Poape,W.
AU  - Pochrybniak,C.
AU  - Pogrebnjak,A A.D.
AU  - Pogrebnjak,A.D.
AU  - Polman,A.
AU  - Pompe,A.
AU  - Pompe,V.
AU  - Pompe,W.
AU  - Pons,F.
AU  - Pop,S.S.
AU  - Popor,B.T.
AU  - Popov,P.B.
AU  - Popov,V.P.
AU  - Poshelt,M.
AU  - Posselt,M.
AU  - Potemkin,G.V.
AU  - Prager,L.
AU  - Pranevičius,L.
AU  - Preuß,E.
AU  - Principi,G.
AU  - Proakurovaky,D.I.
AU  - Proakurovskii,D.I.
AU  - Proekuroveky,O.I.
AU  - Prokofiev,D.D.
AU  - Prokopenko,V.B.
AU  - Proskuroveky,D.I.
AU  - Proskurovsky,D.I.
AU  - Psoskdhovsky,D.E.
AU  - Pushkareva,G.V.
AU  - Pyatkova,T.M.
AU  - Quaranta,F.
AU  - Quian,L.S.
AU  - Radjabov,O.
AU  - Rauschenbach,B.
AU  - Reeson,K.J.
AU  - Reiße,G.
AU  - Remnjev,G.E.
AU  - Reutberg,H.
AU  - Reuther,H.
AU  - Richter,E.
AU  - Richter,Edgar
AU  - Richter,F.
AU  - Richter,H.H.
AU  - Richter,K.
AU  - Ritscheli,C.
AU  - Romanov,I.G.
AU  - Romanov,S.I.
AU  - Romanuk,B.N.
AU  - Rossi,M.
AU  - Rotahtein,V.P.
AU  - Rother,B.
AU  - Rudko,G.Yu
AU  - Ruzimov,ShM.
AU  - Ryzhnitsyn,A.B.
AU  - Rzewuski,H.
AU  - Röhrich,J.
AU  - Sadovskaya,O.L.
AU  - Savchenko,A.O.
AU  - Scardi,P.
AU  - Schade,K.
AU  - Schindler,A.
AU  - Scholz,U.
AU  - Schäfer,O.
AU  - Schöneich,B.
AU  - Schöneich,J.
AU  - Semerak,M.M.
AU  - Semyannikov,V.E.
AU  - Shalnov,A.V.
AU  - Sharkeevt,YuP.
AU  - Shlopak,N.V.
AU  - Shmyrin,A.J.
AU  - Shpilevsky,E.M.
AU  - Siairoth,P.
AU  - Sieber,N.
AU  - Siegel,J.
AU  - Sikolenko,V.V.
AU  - Sinke,W.C.
AU  - Sioshansi,Piran
AU  - Skornyakov,I.V.
AU  - Skorupa,W.
AU  - Skorupa,Wolfgang
AU  - Slobodich,S.V.
AU  - Sobeslavsky,E.
AU  - Sobolev,N.A.
AU  - Solmi,S.
AU  - Soroka,V.I.
AU  - Sotnikov,G.V.
AU  - Starikova,T.I.
AU  - Stary,F.
AU  - Stavrov,Vi
AU  - Steiger,B.
AU  - Stekolnikov,A.F.
AU  - Stepina,N.P.
AU  - Stiller,W.
AU  - Stock,D.
AU  - Stolk,P.A.
AU  - Strümpfe,J.
AU  - Stuckerfc,I .A.
AU  - Subotowicz,M.
AU  - Suchaneck,G.
AU  - Suvorov,A.V.
AU  - Szüce,I.S.
AU  - Tamulevičius,S.
AU  - Tan,Fan
AU  - Teselkin,A.V.
AU  - Thomé,L.
AU  - Tija,S.A.
AU  - Tillack,B.
AU  - Tkach,YuV.
AU  - Tkachenko,A.S.
AU  - Toaasz,Skrabka
AU  - Tokarev,A.S.
AU  - Tokarevski,V.V.
AU  - Tolonics,J.
AU  - Tomasi,A.
AU  - Tousset,J.
AU  - Tretiakov,V.V.
AU  - Trifonov,I.
AU  - Troitsky,V.Yu
AU  - Trushin,YuV.
AU  - Turkin,A.A.
AU  - Turos,A.
AU  - Tyschenko,I.E.
AU  - Uglot,V.V.
AU  - Uglov,V.V.
AU  - Ulyashin,A.B.
AU  - Ulyashin,A.G.
AU  - Urmanov,A.R.
AU  - Ursu,I.
AU  - Uvarov,V.T.
AU  - Vajtai,R.
AU  - Valakh,M.Ya
AU  - Valentini,A.
AU  - Valyaev,A.N.
AU  - Vanhellemonta,Jan
AU  - Varbanov,R.
AU  - Vasiliev,O.
AU  - Vasilyev,A.L.
AU  - Velikov,L.V.
AU  - Vellmar,S.
AU  - Vetter,E.
AU  - Vetter,J.
AU  - Vinzelberg,H.
AU  - Vjatkin,A.P.
AU  - Vobonkdv,V.P.
AU  - Voelskow,M.
AU  - Voevodova,A.V.
AU  - Wagner,S.
AU  - Weber,B.
AU  - Werner,Z.
AU  - Wesch,W.
AU  - Wieser,E.
AU  - Wohlfarth,D.
AU  - Wolf,F.
AU  - Wolf,R.
AU  - Wolff,D.
AU  - Wollschlager,K.
AU  - Wollschläger,K.
AU  - Yaaada,Isao
AU  - Yakubovlch,N.I.
AU  - Yanovski,V.P.
AU  - Yanovskii,V.P.
AU  - Yurchenko,V.A.
AU  - Zaitsev,A.M.
AU  - Zaroslov,D.Yu
AU  - Zarqba,J.
AU  - Zchukova,I.B.
AU  - Zemek,J.
AU  - Zenkevich,A.V.
AU  - Zenkevich,A.V.
AU  - Zhukova,S.I.
AU  - Zhvavyi,S.P.
AU  - Zimmer,K.
AU  - Zinovjev,V.A.
AU  - Zohukova,T.B.
AU  - Zotov,S.D.
TI  - EPM ’89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.–8. 1989, Dresden, GDR
T2  - Physical Research
SN  - 9783112575659
PY  - 2022///]
CY  - Berlin, Boston : 
PB  - De Gruyter, 
KW  - NON-CLASSIFIABLE
KW  - bisacsh
N1  - Frontmatter --; CONTENTS --; INVITED PAPERS --; EXCIMER LASER ASSISTED DEPOSITION OF SiO2 -STRUCTURES ON SEMICONDUCTOR SUBSTRATES FROM SILICONORGANIC FILMS --; SYNTHESIS OF COMPOUNDS IN SEMICONDUCTORS BY THE IMPLANTATION OF REACTIVE IONS --; SURFACE MODIFICATION OF SOLID CARBON BY ION IMPLANTATION --; ION BEAN INDUCED EPITAXIAL CRYSTALLIZATION AND PLANAR AMORPHIZATION OF SILICON --; ION BEAM MIXING: AMORPHIZATION, ICOSAHEDRAL PHASE AND FRACTAL PATTERN FORMATION --; NITRIDE SYNTHESIS WITH UV-PULSED LASERS: APPLICATIONS IN MICROELECTRONICS AND METALLURGY --; CHARACTERIZATION OF POLYCRYSTALLINE α-Al2O3 IMPLANTED WITH ZIRCONIUM, COPPER OR IRON --; PLASMA FORMATION AND FILM GROWTH BY LASER-INDUCED DEPOSITION TECHNIQUE (LPVD) --; BANGS PROFILE CALCULATIONS BT DIRECT NUMERICAL SOLUTION OF LINEARIZED BOLTZMAHH TRANSPORT EQUATIONS --; PHASE FORMATION BY ION BEAM MIXING OF METAL SYSTEMS --; RAPID PHASE TRANSITIONS IN SILICON UNDER PULSED-LASER IRRADIATION --; THE CURRENT STATUS OF ION IMPLANTATION PROCESS IN INDUSTRIAL APPLICATIONS --; ION BEAM PROCESSING FdR SILICON-ON-INSULATOR --; THIN FILM HIGH TEMPERATURE SUPERCONDUCTORS --; STIMULATED PHASE TRANSITION IN THE AMORPHOUS SILICON LAYERSINGLE CRYSTAL SILICON SUBSTRATE SYSTEM --; IONIZED CLUSTER BEAM DEPOSITION -RECENT PROGRESS IN RESEARCH AND APPLICATIONS --; SUBMITTED PAPERS --; 1. IMPLANTATION INTO SILICON --; STUDIES OF PRECIPITATE FORMATION IN OXYGEN-IMPLANTED LAYERS OF SILICON --; STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED SILICON LAYERS BY MEANS OF CROSS-SECTIONAL TEM IMAGING --; GENERATION AND ANNEALING OF POINT DEFECTS IN SILICON AFTER HIGH ENERGY IMPLANTATION --; IMPURITY EFFECTS AT AMORPHIZATION OF Al AND Ga DOPED ION-BOMBARDED SILICON --; RAMAN SCATTERING IN HEAVILY DOPED SILICON LAYERS PREPARED WITH LASER ANNEALING --; ELECTRONIC ENERGY LOSS OF IONS IN SILICON AND GERMANIUM --; In situ RECRYSTALLIZATION OF IMPLANTED Si IN A HIGH-VOLTAGE ELECTRON MICROSCOPE --; DEPENDENCE OF Si-SiO2 INTERFACE STATE DENSITY ON ION IMPLANTATION PROCESS AND ITS EXPLOITATION FOR EVALUATING LOW DOSE ION IMPLANTATION --; INVESTIGATION OF THE INFLUENCE OF A HIGH OXYGEN OR NITROGEN CONTAMINATION ON THE ELECTRICAL ACTIVATION AND RESIDUAL DEFECT EVOLUTION OF ARSENIC IMPLANTED SILICON LAYERS --; LONG-RANGE EFFECT IN ION IMPLANTATION OF SILICON AND ITS ASSOCIATION WITH MECHANICAL STRAIN IN CRYSTAL --; ACTIVATION OF PHOSPHORUS IN SURFACE LAYERS OF P+-IMPLANTED SILICON UNDER RF PLASMA TREATMENT --; CRYSTALLOGRAPHIC NATURE OP THE HEXAGONAL SILICON FORMED BY THE HIGH-INTENCITY ION IMPLANTATION --; APPLICATION OF ION IMPLANTATION TO CHEMICAL MICROSENSORS --; PULSE IMPLANTATION DOPING OF SILICON WITH BORON AND PHOSPHORUS --; SIMULATION OF RANGE PROFILES FOB THE BOSON IMPLANTATION INTO SI02/SI AND SI3N4/SIO2/SI TARGETS --; EPITAXIAL LATERAL OVERGROWTH OF AMORPHOUS CVD SILICON FILMS INDUCED BY ION IRRADIATION --; 2. IMPLANTATION AND ANNEALING OF COMPOUND SEMICONDUCTORS --; RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs WITH A GRAPHITE STRIP HEATER --; PHYSICAL AND ELECTROPHYSICAL PROPERTIES OF Ge2x(GaAs)1-x LAYERS INDUCED BY PULSE ELECTRON BEAM ANNEALING --; MODIFICATION OP ZnSe PROPERTIES BY HIGH CURRENT PULSED ELECTRON BEAMS --; AMORPHIZATION OF CD-IMPLANTED GAAS --; Au-Ge/n-GaAs OHMIC CONTACTS BY RAPID THERMAL ANNEALING --; APPARATUS FOR INFRARED ANNEALING OP GaAs IN CONTROLLED ATMOSPHERE --; GaAs-BASED SEMICONDUCTOR COMPOUND SYNTHESIS BY DUAL ION IMPLANTATION --; INVESTIGATION OP SPECIFIC FEATURES OF GALLIUM ARSENIDE IMPLANTATION WITH HIGH IOU DOSES --; MODIFICATION OF THE InP(100) SURFACE BY ION BEAM --; DEFECT OF PROTON BOMBARDMENT INDUCED DETECTS OH THE OPTICAL ABSORPTION OF GaP AND InP --; CHARACTERISTIC PROPERTIES OF HEATING MONOCRYSTALLINE SEMICONDUCTORS BY NANOSECOND LASER PULSES --; 3. TRANSIENT HEAT TREATMENT OF SEMICONDUCTORS --; INVESTIGATION OF THE DYNAMICS OP PULSED LASER AM NEALING OF ION-IMPLANTED SILICON BY THE PICOSECOND TRANSIENT GRATING TECHNIQUE --; LASER INDUCED PHASE TRANSFORMATION IN SEMICONDUCTORS --; HEATING OF SEMICONDUCTORS BY ION BEAMS AND ION-BEAM INDUCED PROCESSES --; 'THE FORMATION 07 S-DOPED SILICON LASERS BY PUISED HEATING RECRYSTALLIZATION --; INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANT ED SILICON DURING NANOSECOND LASER ANNEALING --; ARSENIC SUBLIMATION AND DIFFUSION AT RAPID ELECTRON BEAM ANNEALING OF IMPLANTED SILICON --; INFLUENCE OF IMPLANTED SILICON LAYERS RECRYSTALLIZATION TYPE ON THE MECHANISM OF As DEACTIVATION AT ELECTRON BEAM ANNEALING --; ANISOTROPIC LOCAL MELTING 0? IMPLANTED SILICON BI 0.05 - 15 B DURATION INCOHERENT LI (ST PULSES --; ANNEALING OF THIN ARSENIC IMPLANTED SILICON LAYERS WITH FLASH GALOGEN LAMP AND RF GAS DISCHARGE --; RAPID THERMAL ANNEALING OF PROTON TRASMUTATION DOPED SILICON --; DEFECT PRODUCTION AND ANNEALING IN 11,5 MeV ELECTRON- AND 60Co-Ɣ IRRADIATED NTD-SILICON --; 4. SILICIDES --; INVESTIGATION 07 THE NEW PHASE FORMATION IK NiSi-Si SYSTEM --; PHASE FORMATION UT LASER DEPOSITED TaxSi 1-x FILMS --; LASER DIRECT WRITING OF CONDUCTIVE THIN FILMS FROM GASEOUS PHASES --; FORMATION OF A SILICIDE/NITRIDE LAYER SYSTEM BK N+ IMPLANTATION --; MoSi2 FORMED BY ION IMPLANTATION THROUGH METAL CITIO TECHNIQUE --; QUANTITATIVE BBS ANALYSIS OF SILICIDES AND SILICIDE OXIDES USING BUMP --; REDISTRIBUTION OF B AND As BY RTP AFTER IMPLANTATION INTO TiSi2 ON Si --; 5. IMPLANTATION INTO METALS --; SURFACE RELIEF DEVELOPMENT AND FATIGUE CRACK INITIATION IN IMPLANTED AND NONIMPLANTED METALS --; CHANGE OP MECHANICAL PROPERTIES OF Al-Mg ALLOY UNDER THE ION BEAM IRRADIATION --; STRUCTURAL-PHASE CHARGES IN PE FILMS IRRADIATED SUCCESSIVELY BY NITROGEN AND BORON IONS --; IMPURITY REDISTRIBUTION DURING HIGH TEMPERATURE CREEP Of Sb+-IMPLANTED Al-ALLOY --; TEE BORON IMPLANTATION EFFECT ON STRUCTURAL-PHASE CHANGES IN THE SYST9I Zr-O/Ni PRODUCED BY ATOMIC MIXING --; IMPLANTATION INDUCED TEXTURE --; SYNTHESIS OP COMPOUNDS IN MOLYBDENUM DURING ION IMPLANTATION COMBINED WITH THERMAL AND PULSED ELECTRON ANNEALING --; PRACTICAL APPLICATIONS OF ION IMPLANTATION FOR WEAR PROTECTION --; RESIDUAL STRAIN ANALYSIS OF Ar+ and N2+ IMPLANTED 304 SS --; WEAR RESISTANT COATINGS PRODUCED BY C+ IMPLANTATION --; STRUCTURE-PHASE TRANSPORTATION IN BIMETALLIC SYSTEMS UNDER POWER PULSE INFLUENCE --; STRUCTURAL AND PHASE CHANGES IN NEAR SURFACE LAYERS OP HIGH POWER ION BEAM IRRADIATES HARD ALLOYS --; EFFECT OF DEFECT STRUCTURE ON INCREASED MECHANICAL AND FRICTION PROPERTIES IN HIGH POWER ION BEAM IRRADIATED α-Fe --; AMORTIZATION MECHANISMS IN ION-BOMBARDED METALLIC ALLOYS: EXPERIMENTAL CONFIRMATION OF MODEL PREDICTIONS --; 6. SURFACE MODIFICATION OF METALS AND OTHER MATERIALS --; THE ALLOYING OF Fe AND V BASE WITH W, Nb AND AI BY ION-BEAM MIXING --; SURFACE MODIFICATION OF STEELS BY IRRADIATION OF HIGH CURRENT ELECTRON PULSE WITH NANOSECOND DURATION --; THE PHYSICAL PROPERTIES OF LAYERS IN GLASSES FORMED BY ION MIXING AND IMPLANTATION --; STRESS WAVES AND STRUCTURAL MODIFICATIONS IN METAL AND ALLOYS AT HIGH CURRENT PULSED ELECTRON BEAU IRRADIATION --; MELTING AND MIXING OF FINE METAL LAYERS AFTER EXPOSURE TO LOW - ENERGY HIGH CURRENT ELECTRON BEAM --; EFFECTS OF ION FLOWS ON STRUCTURE AND PROPERTIES OF CERTAIN INORGANIC DIELECTRICS --; ION BEAM MIXING OF Al/Fe BINARY SYSTEMS --; LASER BEAM MODIFICATION OF OPTICAL FILMS --; MIXING OF Cu - Ni SYSTEM BY GAS - METAL ION BEAM --; STRUCTURE TRANSFER AND PHASE CHANGE BY GENERATION OF THIN FILMS BY MEANS OF LASER-INDUCED DEPOSITION METHODS --; EMISSION Of EXCITED MOLECULES DURING ION BOMBARDMENT Of METALS --; CO2 LASER TREATMENT OF ZnO THIN FILM OPTICAL WAVEGUIDES --; 7. MATERIALS DEPOSITION --; RESIDUAL GAS ADSORPTION AT THE FILM-SUBSTRATE INTERFACE DURING ION-BEAM ASSISTED DEPOSITION --; ANNEALING OF SURFACE AND INTERFACE LAYERS CAUSED BY THE PLASMA/SUBSTRATE INTERACTION DURING THE DEPOSITION OF PECVD a-Si:H FILMS --; SCANNING CO2 LASER INDUCED OXIDATION REACTION IN Ti THIN FILM --; ION BEAM ASSISTED DEPOSITION OF Al ON Fe --; LASER LIGHT INDUCED OXIDATION OF METALS AND SEMICONDUCTORS IN EXTERNAL ELECTRIC FIELD --; METHODS INVESTIGATION OP METAL-POLYMER COMPOSITION TEMPERATURE STABILITY INCREASING --; CATHODIC ARC TECHNIQUE - PRESENT STATE AND DEVELOPMENTS --; MODIFICATION OP ADHESION PROPERTIES OP SOLID FILMS BY ION IMPLANTATION --; FILM DEPOSITION BY LASER INDUCED VACUUM ARC EVAPORATION --; 8.; SILICON ON INSULATORS --; HETEROGENEOUS ION SYNTHESIS OP INSULATING LAYERS IN SILICON --; A TWO-DIMENSIONAL MODEL OF SOI STRUCTURES CRYSTALLIZATION BY PULSE NANOSECOND HEATING --; TEMPERATURE DISTRIBUTION IN MELT AND IN GROWING CRYSTAL DURING SILICON-ON—INSULATOR FORMATION BY MILLISECOND HEATING --; SOI STRUCTURES FORMATION BY PULSED HEATING --; FORMATION MECHANISMS AND STRUCTURES OP BURIED Si3N4 LAYERS, PRODUCED BY HIGH-INTENSITY IMPLANTATION AND RAPID THERMAL ANNEALING --; THE HOLE OF ADDITIONAL NITROGEN TRAPS IN ION SYNTHESIS OP SILICON NITRIDE BURIED LAYERS --; SYNTHESIS OF Si3N4 BURIED LAYERS AT LOW DENSITIES OP ION CURRENT AND INDEPENDENT HEATING OF SILICON TARGETS --; OPTIMIZED SO I-PROCESS I NB BY ION BEAM SYNTHESIS OF BURIED SILICON OXYNITRIDE IN SILICON --; STRUCTURAL CHARACTERIZATION OF THICK ZONE-MELTED SOI-LAYERS --; THE INVESTIGATION OF ION BEAM SYNTHESISED SILICON OXYNITRIDES BY IR-SPECTROSCOPY --; 9. DIAGNOSTIC AND ION BEAM EQUIPMENTS --; HIGH DOSE IMPLANTATION OP NITROGEN INTO SILICON: RBS AND NUCLEAR REACTIONS MEASUREMENTS --; HYDROGEN INCORPORATION IN PROTON-IMPLANTED ELEMENTAL AND COMPOUND SEMICONDUCTORS --; FOCUSED-ION-BEAM MODIFIED STRUCTURES OF METAL ON GLASS --; IN SITU XPS AND LEED STUDY OF Si/SiC>2 INTERFACE CHANGES INDUCED BY ArF EXCIMER LASER IRRADIATION --; HfllSSION PROPERTIES OP ALLOY GOLD-BERYLLIUM FIELD IOff SOURCE --; LOW ENERGY ION MICROSCOPE FOR DIAGNOSTICS AND PREPARATION OF MICROELECTRONIC STRUCTURES WITHIN AN MULTIANALYSIS SYSTEM --; DR37* TUBES RESOHAJtt ACCELERATORS VlfH ACCELKBATIHG vxbzs voeusnra voe the IOS iwtjjjtatioh --; QSZMS M M PRORAINO IN THBRHILLY OXIDIZBD POLYSILICON LAYBRS --; PERFORMANCE OF A BRAGG IONIZATION CHAMBER FOR DEPTH PROFILING AND SURFACE ANALYSIS --; A LITHIUM LIQUID METAL ION SOURCE --; PULSE EXPLOSION ION BEAM SOURCE WITH ONE PULSE REGIME FOR SURFACE MODIFICATION OF MATERIALS --; ULTRASONIC SURFACE WAVES FOR STUDYING THE PROPERTIES OF THIN FILMS --; PROBE MEASUREMENTS IN LASER PRODUCED PLASMA --; PLASMATRON ION SOURCE FOR ION IMPLANTATION --; CEMS STUDY ON ALUMINIUM IMPLANTED IRON --; CBMS HKASÜRÖÖSHTS ON ION IMPLANTKD TOOL STEELS --; LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF A SIS STRUCTURE WITH A THIN SILICON SUBSTRATE --; INVESTIGATION OF ARSENIC IMPLANTED SILICON BY OPTICAL REFLECTOMETRY --; HIGH DOSS ION IMPLANTATION SISTEM FOB COMPOUND SEMICONDUCTORS --; AN OXYGEN ION SOURCE OF DUOPLASMATRON TYPE --; 10. HIGH TEMPERATURE SUPERCONDUCTORS --; LASER-INDUCED PLASMA DEPOSITION OF THIN HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-0 FILMS --; EXPERIMENTAL STUDIES OP EFFECT OF HIGH CURRENT PULSE ELECTRON AND ICARBON ION BEAMS ON THE HIGH TEMPERATURE Y-Ba-Cu-O, Bi-Ca-Sr-Cu-0 SUPERCONDUCTORS --; ENHANCEMENT OF Tc Y-Ba-Cu-O THIN FILMS AFTER PROTON IRRADIATION --; PREPARATION OF SUPERCONDUCTING THIN FILMS BY ION BEAM MIXING --; FORMATION Of HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-O FILMS BY ION-BEAM SPIKE SPUTTERING --; PROPERTIES Of SUPERCONDUCTING FILMS Bi-Sr-Ca-Cu-0 IMPLANTED BY OXIGEN IONS --; FORMATION OF THIN SUPERCONDUCTING FILMS BY Cu+ IMPLANTATION --; SUPERCONDUCTING TBAzCUsOz FILMS OR SILICON PREPARED BY LPVD --; 11. FUNDAMENTALS --; COMPUTATION OF THE DISTRIBUTION OF RADIATION AND TEMPERATURE DURING RAPID THERMAL PROCESSING --; DEFECT PROFILES AND COMPOSITION DISTURBANCES INDUCED BY ION IMPLANTATION --; ENERGY BALANCE IN NONEQUILIBRIUM GRADIENT-ZONE CRYSTALLIZATION IN A SEMICONDUCTOR --; A VACANCY DIFFUSION MODEL OF ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION --; PECULIAR FEATURES OF DEFECT PRODUCTION DUE TO HIGH ENERGY ION IMPLANTATION --; COMPUTER SIMULATION OF ION MOTION IN MULTILAYERED HETEROSTRUCTURES --; THE ROLE OF ABSOLUTE AND CONSTITUTIONAL SUPERCOOLING IN ZONE - MELTING - RECRYSTALLIZATION OF SILICON FILMS --; TIME EVOLUTION OF THE ELECTRON OAS IN A LASER-INDUCED PLASMA - A THEORETICAL STUDY --; THE INFLUENCE 01* THE LIGHT POLARIZATION ON RESONANT LASER-INDUCED DIFFUSION IN CRYSTALS --; RESONANT LASER-INDUCED DIFFUSION OF OXYGEN IN SILICON --; IMPLANTATION EFFECTS OF LASER EVAPORATED PARTICLES --; AN "INSTRUMENT FUNCTION" OF SECONDARY ION EMISSION --; ENERGY AND ANGULAR DISTRIBUTIONS OF IONS BACKSCATTERED FROM THE SIDEMALLS DURING THE IMPLANTATION INTO DEEP TRENCHES --; THE MECHANISMS OP ATOMIC MIGRATIONS IN IMPLANTED FILMS --; MODELING OF THE NITROGEN HIGH DOSE IMPLANTATION INTO SILICON FOR BURIED INSULATING LAYERS --; NUMERICAL SIMULATION OF CHARGED-PARTICLE BEAMS DYNAMICS IN IONIC-OPTICAL SYSTEMS WITH PLASMA EMITTERS OF TECHNOLOGICAL ION SOURCES --; ON THE MECHANISM OF ION-STIMULATED CRYSTALLIZATION --; DECOMPOSITION OF SOLID SOLUTIONS UNDER ION IRRADIATION --; PHASE DIAGRAMS OF BINARY ALLOYS UNDER IRRADIATION --; THE ENERGY ACCUMULATION IN SOLIDS IRRADIATED BY HIGH POWER BEAMS OP CHARGED PARTICLES --; NUCLEATION A? VARYING TEMPERATURES --; MODELLING OP PHASE TRANSFORMATIONS IN AMORPHOUS SILICON BY NANOSECOND PULSED-LASER IRRADIATION --; ELASTIC WAVE GENERATION IN THE CONTINUUM BY A TUBULAR BEAM OP CHARGED PARTICLES --; NUMERICAL CALCULATION OP THERMAL PROCESSES IN LASER PROCESSING OP SEMICONDUCTOR MATERIALS --; A MODEL OP DOPAND REDISTRIBUTION UNDER LASER RECRYSTALLIZATION --; MIS-Transistors in thin polycrystalline silicon and applications in liquid crystal displays and three dimensional integrated circuits --; LATE PAPER --; A MIXED BALLISTIC AND THERMODYNAMIC DESCRIPTION OF ION-BEAM MIXING --; Author --; Physical Research; restricted access
UR  - https://doi.org/10.1515/9783112575666
UR  - https://www.degruyter.com/isbn/9783112575666
UR  - https://www.degruyter.com/document/cover/isbn/9783112575666/original
ER  -