TY  - BOOK
AU  - Adam,M.
AU  - Ageev,V.P
AU  - Albrecht,O.
AU  - Aleksandrov,L .N
AU  - Aleksandrov,L.N
AU  - Aleksaridrov,L .N
AU  - Andoh,Yasunori
AU  - Andra,W
AU  - Andrä,G
AU  - Andrä,G.
AU  - Andrä,H.
AU  - Andrä,W
AU  - Andrä,W.
AU  - Armigliato,A.
AU  - Bachmann,T.
AU  - Baither,D.
AU  - Balandin,V .Yu
AU  - Balandin,V.Yu
AU  - Bali,K.
AU  - Banisch,R
AU  - Banisch,R.
AU  - Barbier,D.
AU  - Barna,P.
AU  - Bartsch,H.
AU  - Battistig,G.
AU  - Bauerle,D.
AU  - Bayazitov,R.M
AU  - Bayer,V.
AU  - Bazu,M
AU  - Becker,S.
AU  - Bederka,S.
AU  - Behrisch,Rainer
AU  - Bello,I.
AU  - Berezhov,N.I.
AU  - Berndt,K.
AU  - Beyer,H.
AU  - Bigl,F
AU  - Birringer,R
AU  - Blochwitz,C.
AU  - Bobeth,M.
AU  - Bollmann,J
AU  - Borisov,B.A
AU  - Bostanjoglo,O.
AU  - Bower,R.
AU  - Brunner,W
AU  - Brylowska,I.
AU  - Brylowska,J.
AU  - Buchner,R
AU  - Budishevsky,V.S
AU  - Budkevich,B.A
AU  - Bugaev,S.P
AU  - Bèyer,A.
AU  - Cadri,M
AU  - Canut,B
AU  - Canut,B.
AU  - Chakarov,I.R
AU  - Chater,R.J.
AU  - Chaussemy,G.
AU  - Chekanov,V.A
AU  - Chelyadinskii,A.R
AU  - Chelyadinskii,A.R.
AU  - Czaus,K.
AU  - Danilowitsch,J
AU  - Dehrn,Christine
AU  - Deneuville,A.
AU  - Deshkovskaya,A.A
AU  - Deutscher,M.
AU  - Dienel,Gerhard
AU  - Dietze,H.-O.
AU  - Dietze,H.J.
AU  - Dilhac,J-M
AU  - Dinca,G.
AU  - Doring,H.J.
AU  - Dorosinetz,V.A.
AU  - Dozca,L.
AU  - Dragula,J
AU  - Dubravcova,V
AU  - Durcansky,J.
AU  - Dvurechensk,A .V
AU  - Dvurechenski,A.V
AU  - Dvurechenskii,A.V
AU  - Dvurechenskii,A.V.
AU  - Dygo,Andrzej
AU  - D’Anna,E
AU  - Ermrich,M
AU  - Evaeev,V.A
AU  - Fattachov,YaV
AU  - Fattachov,YaV.
AU  - Faveiule,S.
AU  - Fechner,R.
AU  - Felba,J
AU  - Flagmeyer,R.
AU  - Flietner,H
AU  - Friedel,K
AU  - Fujimoto,F
AU  - Fujinami,M.
AU  - Fukui,Y.
AU  - Gaiseanu,F.
AU  - Galateanu,L
AU  - Gaponov,S.V.
AU  - Gartner,K
AU  - Gartner,K.
AU  - Garulli,A.
AU  - Gatskevich,E.I.
AU  - Gawlik,G.
AU  - Gdrski,E
AU  - Geiler,H .- D
AU  - Geiler,H.-D.
AU  - Geiler,H.D.
AU  - Georgieva,S.
AU  - Gerasimenko,N.N.
AU  - Gericke,M
AU  - Gerisch,D
AU  - Ges,I.A
AU  - Gessner,Th
AU  - Glaser,E.
AU  - Gleiter,H
AU  - Glushtsov,I.A
AU  - Goltsev,V.P.
AU  - Gotz,G
AU  - Gotz,J.
AU  - Grellneth,I.
AU  - Grno,J.
AU  - Groetzschel,R
AU  - Grotzschel,R.
AU  - Gryziriski,M.
AU  - Grötzschel,R.
AU  - Gunst,U.
AU  - Gyulai,J.
AU  - Gärtner,K.
AU  - Götz,G
AU  - Götz,G.
AU  - Haba,Z
AU  - Haberger,K.
AU  - Haratym,Z.
AU  - Harmann,R.
AU  - Hauffe,W.
AU  - Hecking,N.
AU  - Heera,V.
AU  - Heiber,U
AU  - Heinig,K.-H.
AU  - Hemment,P.L.F.
AU  - Hennig,K
AU  - Hennig,Klaus
AU  - Henrion,W.
AU  - Hensel,E.
AU  - Herold,J
AU  - Hevesi,I
AU  - Hirao,T.
AU  - Hirose,Y.
AU  - Hlavka,J.
AU  - Hoehl,D
AU  - Hohmuth,K
AU  - Holldack,K
AU  - Horodefiski,A.
AU  - Horoderiski,A.
AU  - Horvcith,ZsJ.
AU  - Hulek,Z
AU  - Hunger,B.
AU  - Ilaldinov,I.Z.
AU  - Illich,V.
AU  - Iskanderova,Z.A.
AU  - Ivlev,G.D
AU  - Ivlev,G.D.
AU  - Iwaki,M.
AU  - Iwaki,Masaya
AU  - Izumi,T
AU  - Jager,H.U.
AU  - Jagielski,J
AU  - Jagielski,J.
AU  - Janik,J.
AU  - Jaroli,E
AU  - Jaworska,P
AU  - Jlel’nikov,V.M.
AU  - Johansen,H.
AU  - Joly,J-F.
AU  - Jordanov,A
AU  - Jäger,H.U.
AU  - Jäger,H.U
AU  - Kaat,E.te
AU  - Kagadey,V.A
AU  - Kahlert,V.
AU  - Kahn,A.
AU  - Kalitzova,M.
AU  - Kamada,T
AU  - Kaozmarek,Jan
AU  - Karaijo,Eiji
AU  - Karpuzov,D
AU  - Karpuzov,D.S.
AU  - Kaschner,C.
AU  - Kasko,I
AU  - Katardjiev,I.
AU  - Kebler,G.
AU  - Kerkow,H
AU  - Kerkow,H.
AU  - Keßler,G.
AU  - Khaibullin,I.B
AU  - Khaibullin,I.B.
AU  - Khodasevich,V.V
AU  - Kilner,J.A.
AU  - Kiszczak,K.
AU  - Kleemann,J.
AU  - Klopfer,E.
AU  - Klose,H.
AU  - Klose,M.
AU  - Koegler,R
AU  - Koegler,R.
AU  - Kogler,R.
AU  - Kolitsch,Andreas
AU  - Kolobov,YuR
AU  - Komar,V.P.
AU  - Konopleva,R.F
AU  - Konov,V.I
AU  - Konov,V.L.
AU  - Korotaev,A.D
AU  - Korzjuk,V.I
AU  - Kostov,K.
AU  - Kozanecki,A.
AU  - Krafcsik,I.
AU  - Krai,O
AU  - Kral,V.
AU  - Kreibig,U
AU  - Kreifiig,U.
AU  - Kreißig,U.
AU  - Kremnican,V.
AU  - Krynicki,J
AU  - Kuljasova,O .A
AU  - Kuohler,Roland
AU  - Kurbatova,N.V.
AU  - Kvasov,N.T.
AU  - Lammel,B.
AU  - Landi,E.
AU  - Langnar,J.
AU  - Langner,J.
AU  - Latuszyriski,A.
AU  - Lebedeva,N.I.
AU  - Leggieri,G
AU  - Leiderman,R.Yu
AU  - Leonhardt,G.
AU  - Libesny,M.
AU  - Lindner,J.K.N.
AU  - Linker,G.
AU  - Luches,A.
AU  - Machalett,F.
AU  - Malevich,V.L.
AU  - Manjosov,YuA
AU  - Marest,G.
AU  - Markgraf,W
AU  - Marquardt,H.U.
AU  - Martinez,A.
AU  - Martino,M
AU  - Maslakov,A.I.
AU  - Matsumori,T.
AU  - Matthsi,J.
AU  - Mchitarov,M.A.
AU  - Medianu,R.
AU  - Melnikov,A.A.
AU  - Mende,G.
AU  - Mertens,A
AU  - Mgczka,D.
AU  - Mihailescu,I.N
AU  - Misyuryov,E.M
AU  - Mowcoffre,W
AU  - Mraz,J
AU  - Mueller,H.-J.
AU  - Muller,B.
AU  - Muller,H
AU  - Muller,H.-J.
AU  - Möller,Wolfhard
AU  - Mühle,R
AU  - Mühle,R.
AU  - Münzer,H
AU  - Naujokaitis,R
AU  - Nazarkin,I.V.
AU  - Neubert,F
AU  - Nistor,L.C
AU  - Oertel,G.
AU  - Ogata,Kiyoshi
AU  - Olszewski,A.
AU  - Otto,G.
AU  - Ottoj,Th
AU  - Ovchinnikov,V.J.
AU  - Panish,P.
AU  - Panknin,D
AU  - Panknin,D.
AU  - Paprocki,K.
AU  - Partta,P.P.
AU  - Pashov,N.
AU  - Peart,R.F.
AU  - Pecz,B.
AU  - Petukhov,V.Yu
AU  - Petukhov,V.Yu
AU  - Pibkoszswski,J.
AU  - Piekoszbwski,J.
AU  - Piekoszewski,J.
AU  - Piglmayer,K.
AU  - Pilipovich,V.A
AU  - Pilipovich,V.A.
AU  - Pimenova,G.P.
AU  - Pivot,J
AU  - Pivot,J.
AU  - Pochrybniak,C.
AU  - Podgorski,A.
AU  - Podgörski,A.
AU  - Podlipko,Y.A
AU  - Poklonski,N.A
AU  - Polonin,A.K.
AU  - Pompe,W
AU  - Pompe,W.
AU  - Popov,V.P
AU  - Popov,V.P.
AU  - Posselt,M.
AU  - Prokhorenko,N.L.
AU  - Prokhorenko,N.L.
AU  - Prokhorov,A.M.
AU  - Proskurovsky,D
AU  - Proskurovsky,D.I.
AU  - Przybecki,K
AU  - Rabirtski,M.
AU  - Radjabov,T.D
AU  - Rauschenbach,B
AU  - Rauschenbach,B.
AU  - Reeson,K.J.
AU  - Resch,W.
AU  - Reuther,H.
AU  - Richter,A.
AU  - Richter,C.E
AU  - Richter,E.
AU  - Richter,Edgar
AU  - Richter,H.H.
AU  - Ridl,P.
AU  - Riohter,Edgar
AU  - Ritomsky,A.
AU  - Romanov,A.E
AU  - Romanov,I.M
AU  - Rosiaskl,Witold
AU  - Ross,W.
AU  - Rost,E.
AU  - Ryssel,Heiner
AU  - Rüdenauer,F.G
AU  - Rüdenauer,F.G.
AU  - Sadovskaja,O.L.
AU  - Salomonovic,R
AU  - Samujlov,V.A
AU  - Sasaki,Jun
AU  - Satou,M.
AU  - Savchenko,A.O
AU  - Scfimidt,B
AU  - Schaefer,H.E.
AU  - Scheibe,H.-J
AU  - Scheibe,H.-J.
AU  - Scheibe,H.J
AU  - Schiller,V.
AU  - Schindler,A.
AU  - Schlegel,Th
AU  - Schmidt,B.
AU  - Scholz,U.
AU  - Scholz,Uwe
AU  - Schonborn,A.
AU  - Schoneich,J.
AU  - Schultrich,B.
AU  - Seidel,A
AU  - Seifert,G.
AU  - Serfozo,G.
AU  - Setvak,M
AU  - Setvak,Martin
AU  - Shaimeev,S.S.
AU  - Shibuyta,M.
AU  - Sibl,A
AU  - Sieber,N
AU  - Sieber,N.
AU  - Sielank,J.
AU  - Skornyakov,J.V
AU  - Skorupa,W
AU  - Skorupa,W.
AU  - Sobeslavsky,E.
AU  - Solmi,S
AU  - Sovronov,L.V.
AU  - Steiger,W.
AU  - Steimakh,V.F.
AU  - Steinberger,H
AU  - Stelmach,V.F.
AU  - Stelmakh,V.F
AU  - Stelmateh,V.F
AU  - Stiebritz,J.
AU  - Stock,D
AU  - Strehlau,B.
AU  - Strikovsky,M.D.
AU  - Subotowicz,M.
AU  - Sulik,A
AU  - Suprtm-Belevich,TuR
AU  - Suprun-Belevich,TuR
AU  - Suprun-Belevich,YuR.
AU  - Szorenyi,T
AU  - Szorenyi,T.
AU  - Szyszko,W
AU  - Szyszko,W.
AU  - Tedorescu,V
AU  - Thiele,P.
AU  - Tillack,B
AU  - Tillack,B.
AU  - Tornow,R.P.
AU  - Tornow,W.
AU  - Tousset,J.
AU  - Trushin,YuV
AU  - Tukfatullin,F.K
AU  - Turos,A.
AU  - Turos,Andrzej
AU  - Uglov,V.V
AU  - Ujihira,Y.
AU  - Ulbrner,Z.
AU  - Unkroth,A
AU  - Unterricker,S.
AU  - Urbanovitch,A.I
AU  - Ursu,I
AU  - Valyi,Geza
AU  - Varichenko,V.S
AU  - Veilmar,S
AU  - Vellkov,L.V
AU  - Venkova,E
AU  - Vetter,E.
AU  - Vitali,G
AU  - Vladimirov,V.l
AU  - Voelskow,M
AU  - Voelskow,M.
AU  - Voltr,O
AU  - Völlmar,S.
AU  - Wagner,M
AU  - Wagner,S.
AU  - Warner,Z
AU  - Weber,B.
AU  - Weinelt,W.
AU  - Weise,Ch
AU  - Weiß,H.J
AU  - Werner,P
AU  - Werner,P.
AU  - Werner,Z
AU  - Wesch,W
AU  - Wesch,W.
AU  - Wieeer,E.
AU  - Wieser,E
AU  - Wieser,E.
AU  - Winkler,N.
AU  - Witzmann,A
AU  - Wojtowicz,M.
AU  - Wolff,D.
AU  - Wollschlager,K.
AU  - Wurschum,R.
AU  - Wünsch,R.
AU  - Yankelevich,E.B.
AU  - Zaitsev,A.M
AU  - Zaitsev,A.M.
AU  - Zaripov,M.M
AU  - Zhidkov,V.V.
AU  - Zhvavyi,S.P.
AU  - Zhvavyj,S.P
AU  - Zielinski,W.
TI  - EPM 87. Energy Pulse and Particle Beam Modification of Materials: International Conference held September 7—11, 1987 Dresden, G.D.R. 
T2  - Physical Research
SN  - 9783112611197
AV  - QC611.6.S9 .E664 2022
U1  - 537.622 23
PY  - 2022///]
CY  - Berlin, Boston
PB  - De Gruyter
KW  - Semiconductors
KW  - Surfaces
KW  - Congresses
KW  - DDR
KW  - Dresden
KW  - Energieforschung
KW  - Energiepulstechnik
KW  - Festkörperphysik
KW  - Konferenz
KW  - Materialmodifikation
KW  - Materialwissenschaften
KW  - Oberflächenbehandlung
KW  - Strahlungsphysik
KW  - Teilchenstrahlung
KW  - Werkstofftechnik
KW  - SCIENCE / Physics / Particle
KW  - bisacsh
N1  - Frontmatter --; CONTENTS --; 1. Invited papers --; EPM'87 - STATE OF THE ART --; ACCELERATION OF MICROPARTICLES --; STUDY OF SILICON IMPLANTED BY HIGH DOSE OP IRON GROUP TRANSITION METALS --; MODIFICATIONS INDUCED BY PULSED LASER IRRADIATION OF METALLIC SURFACES IN PRESENCE OF A BREAKDOWN PLASMA IN THE AMBIENT GAS --; IMPURITY EFFECTS AT ION BEAM INDUCED DISORDERING OF HIGHLY DOPED SILICON --; DIRECTIONS OF DEVELOPMENT OF ION BEAM APPLICATIONS TO MODIFICATIONS OF TOOL PROPERTIES IN POLAND --; COMPARATIVE INVESTIGATION OF PHASE FORMATION IN Fe, A1 AND Ti AFTER NITROGEN ION IMPLANTATION --; MECHANISMS OP STRUCTURE FORMATION IN LASER PULSE VAPOUR DEPOSITION --; FUNDAMENTAL ASPECTS OP THERMALLY INDUCED SOI LAYER FORMATION --; PULSED ION IMPLANTATION OF SILICON WITH SELENIUM --; RAPID THERMAL PROCESSING FOR VLSI APPLICATION --; SILICON ON INSULATOR STRUCTURES FOR VLSI FORMED BY ION BEAM SYNTHESIS --; EFFECTS OP IMPURITY-DEFECT INTERACTIONS ON THE LATTICE SITE OCCUPATION OF IMPURITIES IN ION IMPLANTED METALS --; THE PROCESS OF COMPOUNDS FORMATION BY ION IMPLANTATION --; MICROSTRUCTURAL AND TRIBOLOGICAL STUDY OF IRON AND STEELS ION IMPLANTED WITH NITROGEN --; ELECTRON BEAU AND UV-LASER MICROSTRUCTURE FORMATION BY DECOMPOSITION 0? SOLID METAL RESINATE FILMS --; APPLICATIONS OF MICROFOCUSSED ION BEAMS --; STRUCTURE OF CRYSTAL FILMS PREPARED BY VAPOR DEPOSITION AND SIMULTANEOUS ION BOMBARDMENT --; MULTILAYER STRUCTURE CREATION AND CRYSTAL SURFACE MODIFICATION BY LASER-PRODUCED PLASMAS --; 2. Implantation into silicon --; RANGE PROFILE CALCULATIONS FOR THE HIGH ENERGY IMPLANTATION OF PHOSPHORUS INTO SILICON --; DEFECT FLUX EFFECTS DURING ION IMPLANTATION --; IMPURITY REDISTRIBUTION IN SILICON DUE TO ION BOMBARDMENT --; 6 MeV Ni HIGH DOSE IMPLANTATION INTO SILICON --; ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF DOPED AMORPHOUS SILICON LAYERS --; HIGH ENERGY IMPLANTATION AND ANNEALING OF PHOSPHORUS IN SILICON --; DEPTH PROFILES OF RADIATION DAMAGE AFTER HIGH ENERGY SELF-IRRADIATION OF SILICON FROM OPTICAL REFLECTIVITY MEASUREMENTS ON BEVELLED SAMPLES --; JONDTRON - PI HIGH INTENSITY ION PULSE PRODUCING HflCHINE FDR MATERIAL PROCESSING --; A HOVEL ETCH STOP SYSTEM BASED ON HIGH DOSE NITROGEN IMPLANTATION FOR THIN CRYSTALLINE SILICON LAYER FORMATION --; EFFECT OF HIGH ENERGY HYDROGEN BEAM INTENSITY ON DEFECT FORMATION IN SILICON --; 3. Implantation and annealing of compound semiconductor --; RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs BY MEANS OF A GRAPHITE STRIP HEATER --; SILICON AND CHROMIUM DISTRIBUTION IN IMPLANTED AND SHORT TIME ANNEALED GaAs --; INVESTIGATION OF LOW-TEMPERATURE RECRYSTALLIZATION OF ION IMPLANTED AMORPHOUS GaAs LAYERS --; INVESTIGATION OF THE TEMPERATURE DEPENDENCE OF THE DECHANNELING III WEAKLY DAMAGED GaAs --; Short time threshold for electrical activation of implanted and annealed GaAs --; ELECTRICAL PROPERTIES OF RAPID THERMAL ANNEALED IMPLANTED GaAS --; FORMATION OF AMORPHOUS GaP LAYERS BY ION IMPLANTATION AT LOW TEMPERATURE --; RESIDUAL DEFECTS IN IMPLANTED GaAs AFTER RAPID THERMAL ANNEALING WITH INCOHERENT LIGHT --; HALOGEN LAMP ANNEALING OF Au AND AuGe CONTACTS TO GaAs --; 4. Implantation into metals --; FORMATION AND STRUCTURE OF IMPLANTATION-INDUCED AMORPHOUS ALLOYS --; STRUCTURAL AND PHASE TRANSFORMATION IN PULSED ION IMPLANTATION OF BCC METALS --; STRUCTURAL MODIFICATIONS OF NITROGEN IMPLANTED HIGH-SPEED STEEL --; WEAR PROPERTIES OF HIGH-SPEED STEEL IMPLANTED WITH NITROGEN AT VARIOUS THERMAL CONDITIONS --; TRIBOLOGICAL PROPERTIES OF ION IMPLANTED Fe-Cr STEELS --; MICROSTRUCTURE OF TI-IMPLANTED FE --; DOSE AND TEMPERATURE DEPENDENCE OE ARSENIC REDISTRIBUTION IN ION IMPLANTED NICKEL --; INFLUENCE OF TEMPERATURE ON NITROGEN IMPLANTED IRON --; CONVERSION ELECTRON MOSSBAUER SPECTROSCOPIC STUDIES OP IRON IMPLANTED WITH BORON, CARBON AND PHOSPHORUS --; WEAR BEHAVIOUR OF ION IMPLANTED STEELS AND HARD METALS --; HEAT PRODUCTION DURING ION IMPLANTATION INTO METALS AND ALLOYS --; COMPOSITION DEPENDENCE OF MAGNETIZATION OF ION IMPLANTED COBALT LAYERS --; AMORPHIZATION PROCESSES STUDIED BY HIGH DOSE ION IMPLANTATION INTO METALS --; Implantation effects on microcrack initation in fatigued metals --; STRUCTURAL MODIFICATIONS OP Hi EVAPORATED THIN FILMS IRRADIATED WITH P+ IONS --; 5. Transient heat treatment of semiconductors --; ANNEALING OF LASER INDUCED DEFECTS IN SILICON --; ORIGIN OP THE DEFECTS WITH DEEP LEVELS IN PULSED ANNEALED SILICON --; ANNEALING OP SILICON BY INCOHERENT LIGHT PULSES OP 50 ms -10 s DURATIONS --; CONTINUOUS ELECTRON BEAM ANNEALING OP ION-IMPLANTED SILICON --; IN SITU ANNEALING OP ION-IMPLANTED SILICON IN A HIGH-VOLTAGE ELECTRON MICROSCOPE (HVEM) --; Laser beam induced microdefects in silicon detected by SEM and TEM --; RAPID THERMAL ANNEALING AND PROPERTIES OF B AND P IMPLANTED SILICON --; THE EFFECT OF OXYGEN ON ELECTRICAL ACTIVATION AND DIFFUSION OF As IN Si BY RTA --; INFLUENCE OF ELECTRON-BEAM AND HALOGEN LAMP ANNEALING ON THE ELECTRICAL PROPERTIES OF MOS STRUCTURES --; ELECTRICAL ACTIVATION OF BORON IMPLANTED SILICON DURING THE EARLY STAGE OF RAPID THERMAL ANNEALING --; NONEQUILIBRIUM IMPURITY SEGREGATION IN PHOSPHORUS IMPLANTED POLYCRYSTALIINE SILICON SUBJECTED TO TRANSIENT HEATING --; TIME DEPENDENCE OP BORON DIFFUSIVITY DURING PULSE ANNEALING OP ION-IMPLANTED SILICON --; COMPARATIVE ANALYSIS BY THE X-RAY DIFFRACTION METHOD 0? PULSE AND THERMAL ANNEALED ION-IMPLANTED SILICON --; INTERNAL MECHANICAL STRESS AND ELECTRICAL ACTIVATION OF IMPURITY IN ION—IMPLANTED Si DURING PULSE ANNEALING --; THE 13 MeV ELECTRON PULSE INDUCED MODIFICATION OF DYNAMIC PARAMETERS OF SILICON DIODES,THYRYSTORS AND TRANSISTORS --; ACTIVATION OF SHALLOW As+ IMPLANTS IN (100) SILICON BY INCOHERENT LIGHT ANNEALING --; ELECTRON BEAM HEAT SOURCE OF MODIFIED POWER DENSITY DISTRIBUTION --; NANOSECOND POISE RECRISTALLIZATION Of HIGHLY DOSED SILICON LAYERS --; THERMAL STRESSES IN SILICON WAFER DURING PULSED PLASH ANNEALING --; MULTIPLE PULSE IMPLANTATION DOPED LAYERS IN SILICON --; PULSE IMPLANTATION DOPING - APPLICATION FOR PHOTOVOLTAIC JUNCTION FORMATION --; EFFECT OF OXYGEN RECOILS ON THE DEFECT ANNEALING IN Si DURING RTA --; ANALYTICAL EVALUATION OF THE IMPURITY REDISTRIBUTION DURING POST-IMPLANTATION LASER ANNEALING --; RAPID THERMAL ANNEALING : TEMPERATURE AND ACTIVATION UNIFORMITIES - COOLING SPEEDS AND MINIMUM DIFFUSION LENGTHS --; 6. Formation of silicides --; THE INFLUENCE OF IMPLANTATION PARAMETERS AND ANNEALING CONDITIONS ON THE FORMATION AND PROPERTIES OF MoSi2 LAYERS --; LIQUID PHASE GROWTH OF FeSi2 --; LIQUID PHASE GROWTH OF NiSi2 AND CoSi2 --; FORMATION OP EPITAXIAL NiSi2 LAYER BY HIGH DOSE ION IMPLANTATION AND RAPID THERMAL ANNEALING --; REDISTRIBUTION OP IMPLANTED DOPANTS IN MoSi2/POLY-Si STRUCTURES DURING SILICIDATION TEMPERING --; R.B.S. STUDIES OF WSi2 FORMATION FROM Si/W/Si LAYERS BY W + ION MIXING FOLLOWED BY ANNEALING WHEN THE W FILMS CONTAIN OXYGEN --; ELECTRICAL RESISTIVITY OP SILICON IMPLANTED BY HIGH DOSE Cr+ IONS AFTER LASER ANNEALING --; CRYSTALLINE AND AMORPHOUS Cr-Si ALLOY FORMATION WITH ENERGETIC PULSES --; 7. Ion beam assisted deposition and ion beam mixing --; COMPUTER SIMULATION OP ION BEAM MIXING OF COBALT ON SILICON --; I-V AND C-V STUDIES OF ION MIXED Au/GaAs (100) CONTACTS - EFFECT OF THE ANNEALING --; ION MIXING IN GLASSES --; ON THE FORMATION OF CARBON FILMS BY ION BEAM ASSISTED METHOD --; ION MIXING IN Cu/Au MULTILAYERED THIN FILMS --; A MODEL OP SIMULTANEOUS QR ALTERNATING ION IMPLANTATION IN FILMS AND COATINGS BEING DEPOSITED --; INFLUENCE OF HIGH ENERGY PARTICLES ON THIN FILM FORMATION BY LPVD --; MODIFICATION OF SURFACE PROPERTIES OF TOOL STEEL BY ION BEAM MIXING --; Computer simulation and and experimental measurements of recoil implantation of gold into silicon --; 8; Deposition, modification and structurization --; ION BEAM MODIFICATION OF THIN POLYIMIDE FILMS --; STUDY OF ELECTRICAL AND OPTICAL PROPERTIES OF FUSED QUARTZ IMPLANTED BY HIGH DOSE Cr+- AND Fe+-IONS --; ION BOMBARDMENT INDUCED MODIFICATION OF La6 --; Pyrolitic laser deposition of tungsten --; PULSED AND cw LASER SYNTHESIS OF III-VI AND IV-VI COMPOUND FILMS --; MODIFICATION OP ELECTROCHROMIC W03 FILMS BY NANOSECOND LASER PULSES --; HARDENING OF CEMENTED CARBIDES BY LASER PULSE IRRADIATION --; TRANSIENT NUCLEATION IN LASER PLASMA DEPOSITION OF THIN FILMS --; THEORETICAL MODEL OF LASER GENERATED PLASMA FOR THIN FILM DEPOSITION --; EXPERIMENTAL SET-UP FOB LASER PULSE VAPOUR DEPOSITION IN UHV --; CHARACTERIZATION OF THE LPVD-PROCESS BY MICHELSON INTERFEROMETRY --; ON DEFECTS AND STRESSES IN THIN FILMS --; ESR STUDY OF SiN FILMS PREPARED BY ECR PLASMA CVD METHOD --; 9. Silicon on insulator (SOI) --; ELECTRICAL PROPERTIES OF SILICON FILMS ON Si02 FORMED BY EXPLOSIVE CRYSTALLIZATION --; FORMATION OF BURIED SILICON NITRIDE AND OXYNITRIDE LAYERS IN SILICON BY ION BEAM SYNTHESIS --; MODELING OF 18O TRACER STUDIES OF THE OXYGEN REDISTRIBUTION DURING FORMATION OF Si02 LAYERS BY HIGH DOSE IMPLANTATION --; IMPROVED MODELING OF OXYGEN DEPTH PROFILES IN HIGH DOSE OXYGEN-IMPLANTED SILICON --; THEORETICAL INVESTIGATION OF THERMALLY ACTIVATED AND ION BEAM INDUCED LATERAL SOLID-PHASE EPITAXY --; MATHEMATICAL MODELLING OF THE CAPACITANCE CHARACTERISTICS AND THE THRESHOLD VOLTAGE OF A MOS STRUCTURE ON A THIN SILICON SUBSTRATE --; INFLUENCE OF THERMAL GRADIENT ON THE RECRYSTALLIZATION OF THICK POLYCRYSTALLINE SILICON ON SIO2 --; ELECTRICAL CHARACTERIZATION OP THICK SOI-FILMS --; A MODEL FOR NITROGEN REDISTRIBUTION PROCESSES IN HIGH DOSE NITROGEN-IMPLANTED SILICON --; PHYSICAL MODEL, PROPERTIES AND OPTOELECTRONICAL APPLICATION OF HYDROGEN IMPLANTED SOI MOSFET'S --; PULSE LASER INDUCED IGNITION OF EXPLOSIVE LIQUID-PHASE CRYSTALLIZATION OF AMORPHOUS SILICON --; COMPUTER SIMULATION OF GRAIN BOUNDARY CONFINEMENT AT ZONE MELTING RECRYSTALLIZATION --; STUDY OF STRUCTURE FORMATION BY THE MELT INSTABILITY OF SILICON AT LIGHT HEATING --; High Throughput CO2 laser Recrystallization for 3D integrated Devices --; FORMATION OP BURIED NITRIDE LAYERS BELOW NiSi2 BY ION IMPLANTATION --; 10. Diagnostics and ion microfocus beam --; EMISSION CHARACTERISTICS OF EUTECTIC ALLOY LIQUID METAL ION SOURCES FOR FOCUSED ION BEAM SYSTEMS --; CHARACTERISTICS OF AN ExB MASS SEPARATOR FOR FOCUSED ION BEAM SYSTEMS --; CHANNELING EFFECTS AT LOW-ENERGY ION IMPLANTATION --; POSSIBILITIES OF THE TDPAC METHOD FOR THE DIAGNOSIS OF RADIATION DAMAGE AND ANNEALING PROCESS IN IMPLANTED SEMICONDUCTORS --; QUADRUPOLE-SIMS-MEASUREMENTS OP IMPURITIES IN SiO2/Si-STRUCTURES --; HIGH TEMPERATURE ION SOURCE FOR IMPLANTATION PURPOSES --; A HEW CONSTRUCTION OF ION IMPLANTER AT THE SLOVAK TECHNICAL UNIVERSITY --; THERMAL PROCESSES UNDER INTERACTION OP FOCUSED ION BEAMS WITH SEMICONDUCTOR CRYSTALS --; MASS AND ENERGY DISTRIBUTION MEASUREMENTS OF AuSi-LIQUID-METAL-ION SOURCE --; CLUSTER IONS IN LASER MASS SPECTRA OF WO3/C TARGETS --; ANALYSIS OF Ar ION BEAM ETCHING (IBE) INDUCED SURFACE DAMAGE OF GaAs BY MEANS OF 4+CU ADSORPTION / AUTORADIOGRAPHY AND RBS / CHANNELING --; A MaV ION PROBE AT TU PRAGUE --; 11. Fundamentals --; COMPUTER STUDIES OF THE STATISTICAL DISTRIBUTION FUNCTIONS OF PARTICLES MOVING IN COLLISION CASCADES --; MONTE CARLO CALCULATIONS OF HIGH DOSE ION BOMBARDMENT ACCOUNTING FOR DYNAMIC TARGET MODIFICATION --; ENERGY LOSS OF CHANNELED HELIUM IONS BY MONTE CARLO SIMULATION --; TRANSMISSION SPUTTERING OF THIN GOLD FILMS: A COMPUTER SIMULATION STUDY --; MODELLING OP NONEQUILIBRIUM PHASE TRANSITIONS INITIATED BY SHORT LASER PULSES IN SILICON --; INTERMEDIATE CRYSTALLIZATION OP AMORPHOUS SILICON LAYERS AT NANOSECOND FUISED LASER ANNEALING --; INVESTIGATIONS OB THE AMORPHOUS/CRYSTALLINE PHASE TRANSITION IN IONIMPLANTED SILICON BY MEANS OP CROSS-SECTIONAL TEM IMAGING --; NUMERICAL MODELLING OF SILICON SAMPLE MELTING BY HIGH-INTENSITY ION-BEAM PULSE --; SIMULATION OP NANOSECOND LASER ANNEALING OP SILICON ALLOWING FOR CRYSTALLIZATION OP SUPERCOOLED MELT --; PHASE TRANSITIONS INDUCED BY NANOSECOND LASER HEATING OP AMORPHIZED SILICON --; THEORETICAL TREATMENT OF THE IGNITION OF EXPLOSIVE LIQUID PHASE CRYSTALLIZATION PROCESSES --; MODELLING OF THE FACETED GROWTH DURING LATERAL EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS SILICON --; LASER PULSE-INDUCED PHASE TRANSFORMATIONS VISUALIZED BY NANOSECOND-EXPOSURE ELECTRON MICROSCOPY --; THERMAL PULSED ANNEALINS WITH ACCOUNT OF PLASMA EFFECT --; AMORPHOUS SILICON MELTING TEMPERATURE VERSUS SELF-SUSTAINING CRYSTALLIZATION KINETICS --; 12. Miscellaneous --; LONGITUDINAL-SPREAD CHARACTERISTICS OF RADIATION DEFECTS IN TELLURIUM-IMPLANTED GERMANIUM --; ANODIC OXIDATION OF Si AS A LOW TEMPERATURE OXIDATION METHOD FOR PASSIVATION OF SEMICONDUCTOR DEVICES --; SELF-ORGANIZATION PHENOMENA DURING CHARGE TRANSPORT IN BORON DOPED POLYORYSTALLINE SILICON --; LUMINESCENCE OP CUBIC BORON NITRIDE IMPLANTED WITH HIGH ENERGY IONS --; LUMINESCENCE OP DIAMOND IMPLANTED WITH HIGH ENERGY CARBON IONS --; MODIFICATION OF SOLIDS DUE TO THE EXPOSURE TO HIGH TEMPERATURE PLASMAS --; STRUCTURE AND PROPERTIES OF NANOMETER-SIZED SOLIDS --; 13. Author Index --; Backmatter; restricted access; Issued also in print
UR  - https://doi.org/10.1515/9783112611203
UR  - https://www.degruyter.com/isbn/9783112611203
UR  - https://www.degruyter.com/document/cover/isbn/9783112611203/original
ER  -