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Physica status solidi / A. Volume 85, Number 1, September 16, 1984 / ed. by Görlich.

Contributor(s): Material type: TextTextSeries: Physica status solidi / A ; Volume 85, Number 1Publisher: Berlin ; Boston : De Gruyter, [2022]Copyright date: ©1984Edition: Reprint 2021Description: 1 online resource (420 p.)Content type:
Media type:
Carrier type:
ISBN:
  • 9783112501351
  • 9783112501368
Subject(s): Other classification:
  • online - DeGruyter
Online resources: Available additional physical forms:
  • Issued also in print.
Contents:
Frontmatter -- Classification Scheme -- Author Index -- Contents -- Review Article -- Effect of Dislocation Structure on Creep and Fracture of Metals and Alloys -- Original Papers and Short Notes -- Structure -- The Nature of Some Planar Defects in 2H Martensite of Cu-Al Alloys as Determined by HREM -- Partial Higher-Order Structure Factors in the Long-Wavelength Limit for Molten Cuprous Chloride -- Quantitative Interference Electron Microscopy for Spherical Objects -- Analysis of the Ground State of a Solid Solution with Interactions up to fc-th Coordination Spheres of the Crystal Lattice -- A Dark-Field TEM Method for Crystal Structure Determination of Cu-Rich Phases on Twins in Silicon -- Structural and Chemical Analysis of a Silicon Nitride Film on GraAs by Null Ellipsometry -- Coherence Properties of Radiation Diffracted by an Elastically Bent Crystal -- Defect Structure of ZnSe Crystals Investigated by Electron Microscopy -- Lattice properties -- Monocrystal-Polycrystal Elastic Constants of a Stainless Steel -- Structure and Molar Refraction and Its Wavelength Dependence at Different Alkali and Ammonium Halides -- Defects, atomistic aspects -- Kinetics of Vacancy Mechanism of the Solid-Liquid Transition in F.C.C. Metals -- On the Identification of the Nature of Stacking Faults in H.C.P. Materials -- Dislocation Pinning at Low Temperatures in Nb -- Infrared Spectroscopical and TEM Investigations of Oxygen Precipitation in Silicon Crystals with Medium and High Oxygen Concentrations -- Steady-State Creep and Strain Transients for Stress-Dip Tests in Polycrystalline Magnesium at 300 °C -- Structural Vacancies in Nonstoichiometric Compounds at High Pressure -- Effect of Ionizing Radiation on Optical Properties of Thallium Halides in the 0.36 to 15 μm Range -- Magnetism -- Yttrium Iron Garnet Films Substituted by Gd and Mn -- Method for Measurement of Magnetostriction Constants in (001) Thin Films Using FMR -- On the Inhibition of Dynamic Conversion in Bubble Garnet Domains by a Thin Midplane Layer -- Extended electronic states and transitions -- Energy-Depth Relation of Electrons in Bulk Targets by Monte-Carlo Calculations -- Temperature Dependence of Interband Optical Absorption of Silicon at 1152, 1064, 750, and 694 nm -- Kilovolt Electron Energy Loss Distribution in GaAsP -- Localized electronic states and transitions -- Electrical Measurements on Silver-Diffused GaAs -- Analysis of DLTS Curves of Aggregated Deep Level Impurities -- Origin of a Shallow Acceptor in Quenched Germanium -- Photoluminescence and Electrical Properties of Yapour Phase Epitaxial ZnSe Grown on GaAs -- Piezoelectrically Induced Charge Distributions around Dislocations in CdTe and HgCdTe -- Effect of the Stoichiometry Control on the Photoelectrical Properties of ZnSxSe 1-x -- Time-Resolved EPR on Polyacetylene -- Two Types of F-Centres and Thermoluminescence in BaFCl Crystals -- Energy Transfer between Excited Adsorbed Dye Molecules and Charged Defects in Insulator-Semiconductor Structures -- Electric transport -- AC Conductivity in Single Crystals and Compactions of TCNQ Complex Salts -- Conductivity in One-Dimensional Disordered Cs2TCNQ3 Salts -- Intensity and Temperature Dependence of Steady-State Photoconductivity Down to 8 K and DOS Distribution Obtained from These Measurements in a-Si:H -- Short Notes -- Formation of Pt Silicides by a Millisecond Laser Pulse -- The Neutron Diffraction of Molten TlCl, TIBr, and Tll -- In Vitro Characterization of Bioactivity of Glassy or Glass-Crystalline Implant Materials Using Auger Electron Spectroscopy -- DC Plasma Nitridation of Thin Aluminium Films -- Influence of Work Function Change Due to Oxygen Chemisorption on the Secondary-Ion Emission Probability -- On X-Ray Surface Diffraction -- Strain-Optical Constant ( p ^ ) of Mixed Crystals of KCl-KBr of Equimolar Concentration -- Qbservation of RF Pulses from Solids during Laser Irradiation -- Damage and Trapping Behaviour of Crystalline Silicon at Low Energy Deuterium Implantation -- Defect Structure Study with Planar Channeling in Pulse-Annealed Ion-Implanted Silicon -- Influence of Dislocation Core Density on Overheating Absence -- Relaxation Time and Electron Scattering Cross Section in Irradiated p-Silicon at Temperatures of Liquid Helium from Cyclotron Resonance Data -- Temperature Dependence of the Charge-Carrier'Removal Rate in n-GaAs Containing Defect Clusters -- Structure and Magnetic Properties of Nd2Fe14BH 2.7 -- The Usefulness of the Photoacoustic Cell for Magnetic Measurements -- Crystallographic, Magnetic, and Electrical Properties of Nickel-Substituted Chromium Telluride -- Fluorescence Decay of Adsorbed Dye Molecules on Solid Surfaces -- Cathodoluminescence of InGaAsP -- Bipolar Photoconductivity and Hall Effect of the Acoustoelectric Current in CdTe -- Relaxation Peculiarities in TlSbSe2 Crystals -- Electrical Resistivity Studies on the Heusler Alloys Co2T 1-x Al 1+x(T = Ti or Zr) -- Current-Voltage Characteristic of the p-n Junction with an Exponential Impurity Distribution at Its Base Contact -- Pre-Printed Titles
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eBook eBook Biblioteca "Angelicum" Pont. Univ. S.Tommaso d'Aquino Nuvola online online - DeGruyter (Browse shelf(Opens below)) Online access Not for loan (Accesso limitato) Accesso per gli utenti autorizzati / Access for authorized users (dgr)9783112501368

Frontmatter -- Classification Scheme -- Author Index -- Contents -- Review Article -- Effect of Dislocation Structure on Creep and Fracture of Metals and Alloys -- Original Papers and Short Notes -- Structure -- The Nature of Some Planar Defects in 2H Martensite of Cu-Al Alloys as Determined by HREM -- Partial Higher-Order Structure Factors in the Long-Wavelength Limit for Molten Cuprous Chloride -- Quantitative Interference Electron Microscopy for Spherical Objects -- Analysis of the Ground State of a Solid Solution with Interactions up to fc-th Coordination Spheres of the Crystal Lattice -- A Dark-Field TEM Method for Crystal Structure Determination of Cu-Rich Phases on Twins in Silicon -- Structural and Chemical Analysis of a Silicon Nitride Film on GraAs by Null Ellipsometry -- Coherence Properties of Radiation Diffracted by an Elastically Bent Crystal -- Defect Structure of ZnSe Crystals Investigated by Electron Microscopy -- Lattice properties -- Monocrystal-Polycrystal Elastic Constants of a Stainless Steel -- Structure and Molar Refraction and Its Wavelength Dependence at Different Alkali and Ammonium Halides -- Defects, atomistic aspects -- Kinetics of Vacancy Mechanism of the Solid-Liquid Transition in F.C.C. Metals -- On the Identification of the Nature of Stacking Faults in H.C.P. Materials -- Dislocation Pinning at Low Temperatures in Nb -- Infrared Spectroscopical and TEM Investigations of Oxygen Precipitation in Silicon Crystals with Medium and High Oxygen Concentrations -- Steady-State Creep and Strain Transients for Stress-Dip Tests in Polycrystalline Magnesium at 300 °C -- Structural Vacancies in Nonstoichiometric Compounds at High Pressure -- Effect of Ionizing Radiation on Optical Properties of Thallium Halides in the 0.36 to 15 μm Range -- Magnetism -- Yttrium Iron Garnet Films Substituted by Gd and Mn -- Method for Measurement of Magnetostriction Constants in (001) Thin Films Using FMR -- On the Inhibition of Dynamic Conversion in Bubble Garnet Domains by a Thin Midplane Layer -- Extended electronic states and transitions -- Energy-Depth Relation of Electrons in Bulk Targets by Monte-Carlo Calculations -- Temperature Dependence of Interband Optical Absorption of Silicon at 1152, 1064, 750, and 694 nm -- Kilovolt Electron Energy Loss Distribution in GaAsP -- Localized electronic states and transitions -- Electrical Measurements on Silver-Diffused GaAs -- Analysis of DLTS Curves of Aggregated Deep Level Impurities -- Origin of a Shallow Acceptor in Quenched Germanium -- Photoluminescence and Electrical Properties of Yapour Phase Epitaxial ZnSe Grown on GaAs -- Piezoelectrically Induced Charge Distributions around Dislocations in CdTe and HgCdTe -- Effect of the Stoichiometry Control on the Photoelectrical Properties of ZnSxSe 1-x -- Time-Resolved EPR on Polyacetylene -- Two Types of F-Centres and Thermoluminescence in BaFCl Crystals -- Energy Transfer between Excited Adsorbed Dye Molecules and Charged Defects in Insulator-Semiconductor Structures -- Electric transport -- AC Conductivity in Single Crystals and Compactions of TCNQ Complex Salts -- Conductivity in One-Dimensional Disordered Cs2TCNQ3 Salts -- Intensity and Temperature Dependence of Steady-State Photoconductivity Down to 8 K and DOS Distribution Obtained from These Measurements in a-Si:H -- Short Notes -- Formation of Pt Silicides by a Millisecond Laser Pulse -- The Neutron Diffraction of Molten TlCl, TIBr, and Tll -- In Vitro Characterization of Bioactivity of Glassy or Glass-Crystalline Implant Materials Using Auger Electron Spectroscopy -- DC Plasma Nitridation of Thin Aluminium Films -- Influence of Work Function Change Due to Oxygen Chemisorption on the Secondary-Ion Emission Probability -- On X-Ray Surface Diffraction -- Strain-Optical Constant ( p ^ ) of Mixed Crystals of KCl-KBr of Equimolar Concentration -- Qbservation of RF Pulses from Solids during Laser Irradiation -- Damage and Trapping Behaviour of Crystalline Silicon at Low Energy Deuterium Implantation -- Defect Structure Study with Planar Channeling in Pulse-Annealed Ion-Implanted Silicon -- Influence of Dislocation Core Density on Overheating Absence -- Relaxation Time and Electron Scattering Cross Section in Irradiated p-Silicon at Temperatures of Liquid Helium from Cyclotron Resonance Data -- Temperature Dependence of the Charge-Carrier'Removal Rate in n-GaAs Containing Defect Clusters -- Structure and Magnetic Properties of Nd2Fe14BH 2.7 -- The Usefulness of the Photoacoustic Cell for Magnetic Measurements -- Crystallographic, Magnetic, and Electrical Properties of Nickel-Substituted Chromium Telluride -- Fluorescence Decay of Adsorbed Dye Molecules on Solid Surfaces -- Cathodoluminescence of InGaAsP -- Bipolar Photoconductivity and Hall Effect of the Acoustoelectric Current in CdTe -- Relaxation Peculiarities in TlSbSe2 Crystals -- Electrical Resistivity Studies on the Heusler Alloys Co2T 1-x Al 1+x(T = Ti or Zr) -- Current-Voltage Characteristic of the p-n Junction with an Exponential Impurity Distribution at Its Base Contact -- Pre-Printed Titles

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In English.

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