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Physica status solidi / A. Volume 73, 1, September 16 / ed. by Görlich.

Contributor(s): Material type: TextTextSeries: Physica status solidi / A ; Volume 73, 1Publisher: Berlin ; Boston : De Gruyter, [2022]Copyright date: ©1982Edition: Reprint 2021Description: 1 online resource (460 p.)Content type:
Media type:
Carrier type:
ISBN:
  • 9783112494998
  • 9783112495001
Subject(s): Other classification:
  • online - DeGruyter
Online resources: Available additional physical forms:
  • Issued also in print.
Contents:
Frontmatter -- Author Index -- Contents -- Review Article -- Distribution Model of Flicker Noise in Semiconductors -- Original Papers -- Sputter Epitaxy of Ag and Ni Films -- Electron Microscopic Studies of Crystallization and Magnetic Domain Structure of Mn-Ga Thin Films -- Anomalous Contrast in Weak Beam Images of Stacking Faults -- Effect of Sample Size upon Mean-Square Displacements of Atoms in Solidified Noble Gases -- Microwave Theory of Ballistic GaAs Solid State Diodes and Triodes -- Oscillator Strengths of Transitions between Stark Levels of NdxGd1-xPsO14 -- Dielectric Relaxation in Liquid and Plastic Phases of 2,2-Dinitropropane -- Exoelectron Emission from Metals (Cu, Zn, Au) Excited by Low-Energy Electrons below 200 eV -- Transient Radiation-Induced Conductivity in Polymers -- Influence of Composition Faults on the Anisotropic Conductivity of Layered Semiconductors -- Time-Resolved TEM of Transient Effects in Pulse Annealing of Ge and Ge-Te Films -- Theoretical Considerations on the Diffusion-Controlled Particle Growth in an Isotropic Medium -- Experimentelle Untersuchungen zur Klärung des Diffusionsverhaltens kupferreicher Kupfer-Nickel Legierungen -- The Influence of the Doping Level on the Cathodoluminescence in GaAs1-xPx:N, Zn Epitaxial Layers -- Determination of Nitrogen Concentrations in (111) Oriented VPE-GaP Epitaxial Layers by Measurement of the Precision Lattice Parameter -- Pulse Laser Induced High-Temperature Solid-Phase Annealing of Arsenic Implanted Silicon -- The Dependence of the Reversion of Ghiinier-Preston Zones in an Al-4.5 at% Zn-2.0 at% Mg Alloy on the Pre-Ageing Conditions -- Electrical Characteristics of the InSb Schottky Diode -- A Grain-Boundary-Type Maxwell-Wagner Peak in the Thermally-Stimulated Depolarization of Doped Ceria Ceramics -- Generation Process of Dislocations in Precipitate-Containing Silicon Crystals -- Ti-Au Metallic Glasses Formed by Ion Mixing -- The Magnetic Heat Capacity of the Configurationally Disordered Ni-25 at% Fe Alloy -- A Possible Origin of the Internal Electric Field Responsible of the Anomalous Photovoltage in Twinned ZnSe Single Crystals -- Energy Transfer Phenomena in the System (Y, Ce, Gd, Tb)Fs -- A Numerical Explanation for a Relation of the Domain Width to the Thickness in Barium Ferrite Crystals -- X-Ray Peak Broadening as a Result of Twin Formation in Some Oxides Derived by Dehydration -- Solid-Phase-Epitaxial Growth in Ion-Implanted Silicon -- On Internal Premelting in Metals -- On the Mechanism of F.C.C. -> H.C.P. Transformation -- Mossbauer Study of the Formation of Solid Solutions in the a-Fe2O3-Al203 System -- Influence of Irradiation with Heavy Ions on the Defect Structure and Mechanical Properties of LiF Crystals -- A Structural Study of Vapour-Deposited Al-Pd Alloys -- Self-Diffusion in Rare-Gas Solids -- The NDC and Low-Frequency Electric Instabilities in GaAs Crystals with Dislocations -- Short Notes -- The Influence of Exclusion on Light Absorption by Free Carriers in "Pure" (almost Intrinsic) Semiconductors with Non-Injecting Contacts -- An Anomalous Aspect of GaAs Surface Dissociation by Q-Switch Pulsed Ruby Laser Irradiation -- On the Effect of Lattice Dilatation upon Weak-Beam Contrast from Stacking Faults in Transmission Electron Microscopy -- A Further Comment on the Weak-Beam Contrast of Stacking Faults in Silicon -- Application of the Mayadas-Shatzkes Model for Electrical Conduction in Thin Films with Unlike Surfaces -- Exact J-U Characteristic of an Insulator with Traps Lying above the Fermi Level in Non-Constant Mobility Regime -- Elastic Stresses and Elastic Energy of a Flux Line in a Half-Space -- Some Aspects of Activation Energy Calculations for Thermostimulated Exoelectronic Emission -- Proton Conduction in (NH4)HSO4 Single Crystals -- Red Luminescence in X-Irradiated LiF:Mg -- On the Validity of Interpretation of Some Grain Boundary Processes Based on the Assumption about the Existence of Unrelaxed Extrinsic Grain Boundary Dislocations -- A Model of Energy Deposition into Semiconductors during Laser Annealing -- Elastic Nonlinearity of KH3(SeO3)2 and KD3(SeQ3)2 Crystals -- Some Structure Defects in Neutron Irradiated Fluorphlogopite -- On the Crystalline Structure of Hydrides of ErFe2 and HoFe2 -- Superconductive Properties of the Chevrel-Phase System CuxMo6S8 with x = 3.2 to 3.9 -- The Motion of Deep Donor Centres in Reverse Biased n-GaAs Surface Barrier Diodes -- Study of the Temperature Dependences of Magnetic Susceptibilities and 7Li NMR Spectra of Ferriferrous Micas -- Hall Measurements along Zinc Diffusion Profiles in n-GaAs1-a-xPx (0.6 < x < 1) -- Collision-Dominated Limit of Near-Thermal Noise in Short Solid-State Diodes -- Collision-Free Limit of Near-Thermal Noise in Short Solid-State Diodes -- TGA and DTA Studies on Me-Stabilized B- Alumina (Me = Co, Ni, Cu, Zn) Exposed to Moist Air -- On the Origin of S-Shaped Current-Voltage Characteristics in p-Type Tellurium -- Glass-Like Behaviour of Sr1-xBaxNb2O6 (SBN) Single Crystals Demonstrated by Heat Capacity Measurements -- The Structure Constant and Micromagnetic Structure of Etched Ni80Fe20 Films -- Room Temperature Visible Laser Action of F Aggregated Centers in LiF:Mg, OH Crystals -- High-Frequency Electron Transport in GaxIn1-xAsyP1-y Lattice Matched to InP -- The Analysis of Internal Friction Curves for a Temperature Gradient Existing along the Sample -- Stability of Composition Automodulated Complex Epitaxial Films -- Mossbauer Effect Study of Polymetallic Nodules from Indian Ocean Bed -- Search for Intermetallic Phases in Radiation-Enhanced Diffusion of Tin into Steels -- Change of Dislocation Mobility Characteristics in Silicon Single Crystals at Elevated Temperatures -- Superconduction: On the Sintering of a "Chevrel Phase" - A New High Temperature Phase of PbMo6S8 -- On the Noise of Semiconductor Diode Structures with Strong Carrier Accumulation -- Pre-Printed Titles -- Backmatter
Holdings
Item type Current library Call number URL Status Notes Barcode
eBook eBook Biblioteca "Angelicum" Pont. Univ. S.Tommaso d'Aquino Nuvola online online - DeGruyter (Browse shelf(Opens below)) Online access Not for loan (Accesso limitato) Accesso per gli utenti autorizzati / Access for authorized users (dgr)9783112495001

Frontmatter -- Author Index -- Contents -- Review Article -- Distribution Model of Flicker Noise in Semiconductors -- Original Papers -- Sputter Epitaxy of Ag and Ni Films -- Electron Microscopic Studies of Crystallization and Magnetic Domain Structure of Mn-Ga Thin Films -- Anomalous Contrast in Weak Beam Images of Stacking Faults -- Effect of Sample Size upon Mean-Square Displacements of Atoms in Solidified Noble Gases -- Microwave Theory of Ballistic GaAs Solid State Diodes and Triodes -- Oscillator Strengths of Transitions between Stark Levels of NdxGd1-xPsO14 -- Dielectric Relaxation in Liquid and Plastic Phases of 2,2-Dinitropropane -- Exoelectron Emission from Metals (Cu, Zn, Au) Excited by Low-Energy Electrons below 200 eV -- Transient Radiation-Induced Conductivity in Polymers -- Influence of Composition Faults on the Anisotropic Conductivity of Layered Semiconductors -- Time-Resolved TEM of Transient Effects in Pulse Annealing of Ge and Ge-Te Films -- Theoretical Considerations on the Diffusion-Controlled Particle Growth in an Isotropic Medium -- Experimentelle Untersuchungen zur Klärung des Diffusionsverhaltens kupferreicher Kupfer-Nickel Legierungen -- The Influence of the Doping Level on the Cathodoluminescence in GaAs1-xPx:N, Zn Epitaxial Layers -- Determination of Nitrogen Concentrations in (111) Oriented VPE-GaP Epitaxial Layers by Measurement of the Precision Lattice Parameter -- Pulse Laser Induced High-Temperature Solid-Phase Annealing of Arsenic Implanted Silicon -- The Dependence of the Reversion of Ghiinier-Preston Zones in an Al-4.5 at% Zn-2.0 at% Mg Alloy on the Pre-Ageing Conditions -- Electrical Characteristics of the InSb Schottky Diode -- A Grain-Boundary-Type Maxwell-Wagner Peak in the Thermally-Stimulated Depolarization of Doped Ceria Ceramics -- Generation Process of Dislocations in Precipitate-Containing Silicon Crystals -- Ti-Au Metallic Glasses Formed by Ion Mixing -- The Magnetic Heat Capacity of the Configurationally Disordered Ni-25 at% Fe Alloy -- A Possible Origin of the Internal Electric Field Responsible of the Anomalous Photovoltage in Twinned ZnSe Single Crystals -- Energy Transfer Phenomena in the System (Y, Ce, Gd, Tb)Fs -- A Numerical Explanation for a Relation of the Domain Width to the Thickness in Barium Ferrite Crystals -- X-Ray Peak Broadening as a Result of Twin Formation in Some Oxides Derived by Dehydration -- Solid-Phase-Epitaxial Growth in Ion-Implanted Silicon -- On Internal Premelting in Metals -- On the Mechanism of F.C.C. -> H.C.P. Transformation -- Mossbauer Study of the Formation of Solid Solutions in the a-Fe2O3-Al203 System -- Influence of Irradiation with Heavy Ions on the Defect Structure and Mechanical Properties of LiF Crystals -- A Structural Study of Vapour-Deposited Al-Pd Alloys -- Self-Diffusion in Rare-Gas Solids -- The NDC and Low-Frequency Electric Instabilities in GaAs Crystals with Dislocations -- Short Notes -- The Influence of Exclusion on Light Absorption by Free Carriers in "Pure" (almost Intrinsic) Semiconductors with Non-Injecting Contacts -- An Anomalous Aspect of GaAs Surface Dissociation by Q-Switch Pulsed Ruby Laser Irradiation -- On the Effect of Lattice Dilatation upon Weak-Beam Contrast from Stacking Faults in Transmission Electron Microscopy -- A Further Comment on the Weak-Beam Contrast of Stacking Faults in Silicon -- Application of the Mayadas-Shatzkes Model for Electrical Conduction in Thin Films with Unlike Surfaces -- Exact J-U Characteristic of an Insulator with Traps Lying above the Fermi Level in Non-Constant Mobility Regime -- Elastic Stresses and Elastic Energy of a Flux Line in a Half-Space -- Some Aspects of Activation Energy Calculations for Thermostimulated Exoelectronic Emission -- Proton Conduction in (NH4)HSO4 Single Crystals -- Red Luminescence in X-Irradiated LiF:Mg -- On the Validity of Interpretation of Some Grain Boundary Processes Based on the Assumption about the Existence of Unrelaxed Extrinsic Grain Boundary Dislocations -- A Model of Energy Deposition into Semiconductors during Laser Annealing -- Elastic Nonlinearity of KH3(SeO3)2 and KD3(SeQ3)2 Crystals -- Some Structure Defects in Neutron Irradiated Fluorphlogopite -- On the Crystalline Structure of Hydrides of ErFe2 and HoFe2 -- Superconductive Properties of the Chevrel-Phase System CuxMo6S8 with x = 3.2 to 3.9 -- The Motion of Deep Donor Centres in Reverse Biased n-GaAs Surface Barrier Diodes -- Study of the Temperature Dependences of Magnetic Susceptibilities and 7Li NMR Spectra of Ferriferrous Micas -- Hall Measurements along Zinc Diffusion Profiles in n-GaAs1-a-xPx (0.6 < x < 1) -- Collision-Dominated Limit of Near-Thermal Noise in Short Solid-State Diodes -- Collision-Free Limit of Near-Thermal Noise in Short Solid-State Diodes -- TGA and DTA Studies on Me-Stabilized B- Alumina (Me = Co, Ni, Cu, Zn) Exposed to Moist Air -- On the Origin of S-Shaped Current-Voltage Characteristics in p-Type Tellurium -- Glass-Like Behaviour of Sr1-xBaxNb2O6 (SBN) Single Crystals Demonstrated by Heat Capacity Measurements -- The Structure Constant and Micromagnetic Structure of Etched Ni80Fe20 Films -- Room Temperature Visible Laser Action of F Aggregated Centers in LiF:Mg, OH Crystals -- High-Frequency Electron Transport in GaxIn1-xAsyP1-y Lattice Matched to InP -- The Analysis of Internal Friction Curves for a Temperature Gradient Existing along the Sample -- Stability of Composition Automodulated Complex Epitaxial Films -- Mossbauer Effect Study of Polymetallic Nodules from Indian Ocean Bed -- Search for Intermetallic Phases in Radiation-Enhanced Diffusion of Tin into Steels -- Change of Dislocation Mobility Characteristics in Silicon Single Crystals at Elevated Temperatures -- Superconduction: On the Sintering of a "Chevrel Phase" - A New High Temperature Phase of PbMo6S8 -- On the Noise of Semiconductor Diode Structures with Strong Carrier Accumulation -- Pre-Printed Titles -- Backmatter

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http://purl.org/coar/access_right/c_16ec

Issued also in print.

Mode of access: Internet via World Wide Web.

In English.

Description based on online resource; title from PDF title page (publisher's Web site, viewed 01. Dez 2022)

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