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Physica status solidi / A. Volume 82, Number 1, March 16 / ed. by Görlich.

Contributor(s): Material type: TextTextSeries: Physica status solidi / A ; Volume 82, Number 1Publisher: Berlin ; Boston : De Gruyter, [2022]Copyright date: ©1984Edition: Reprint 2021Description: 1 online resource (476 p.)Content type:
Media type:
Carrier type:
ISBN:
  • 9783112501559
  • 9783112501566
Subject(s): Other classification:
  • online - DeGruyter
Online resources: Available additional physical forms:
  • Issued also in print.
Contents:
Author Index -- Classification Scheme -- Contents -- Review Article -- The I-h Junction as an Element of the Semiconductor Device -- Original Papers -- Original Papers and Short Notes -- The Dependence of Scanning Electron Acoustic Microscopy (SEAM) Imaging on Chopping and Detection Frequency for Metal Samples -- Contrast Investigations of Surface Acoustic Waves by Stroboscopic Topography -- Twist Disclinations in Thin SmC* Liquid Crystal -- A Complex High-Temperature Phase in Cu9Zr2 -- Kinetics of the Amorphous-Crystalline Transition in the Metallic Glass Fe40Ni40B20 -- Phase Transitions in Ferroelastic RbIn(MoO4)2 Crystals by Electron Paramagnetic Resonance of Cr 3+ Ions -- Lattice properties -- Method for Obtaining the Spectrum of Plastic Strains of Mesoscopic Volume Elements in Fatigued Materials Investigated by X-Rays -- Defects, atomistic aspects -- The Influence of Cu on Dislocation Motion in Si -- Steady-State Creep in Quartz -- Optical Study of Defects in Quenched MgO Crystals -- The Influence of Silver and Copper Electrolysis on the Radiation-Induced Optical Absorption of Natural Quartz -- The Influence of Foreigen Atoms on the Epitaxial Annealing of Ion-Implanted Silicon -- Reduction of Copper Contamination in Germanium on Heat Treatments above 700 °C -- Positron Annihilation Studies on BeO Powders -- The Annealing Behaviour of Arsenic-Implanted Silicon between 600 and 800 °C Characterized by Carrier Density Profiles -- Lateral Diffusion of Photodoped Silver in Amorphous Ge25Se75 Layers -- Plastic Deformation Behavior of ß-CuZn Single Crystals at Low and High Temperatures -- Electrical Activation and Damage Annealing of Boron-Implanted Silicon by Flash-Lamp Irradiation -- Magnetism -- High-Sensitivity Two-Component Measuring Technique of Inductances as Applied to the Investigation of Magnetic After-Effects -- Magnetic Properties of UGaCo -- Magnetic Properties of RhMnSi and CoTiSi -- Localized electronic states and transitions -- Glow Curves and the Emission of Flux Grown BaFCl :Gd Crystals -- Photoconductivity and Non-Equilibrium Carrier Recombination in CdIn2S4 Single Crystals -- The Retrapping Process in a Thermoluminescence Model with an Intra-Pair Metastable State -- Profile of Trapped Charge in Silicon Nitride Films in MNOS Structures -- Pre- and Post-Irradiation Deformation Effects on Thermoluminescence Studies in Barium-Doped NaCl Crystals -- Nature of Thermal Donors in Silicon Crystals -- Studies of Low-Energy Optical Absorption and Gap State Density oi a-CdS by the Constant Photocurrent Method -- Electric transport -- Oscillatory Dependence of the Interference Photomagnetoelectric Effect and Photoconductivity on Magnetic Field -- Morphology, Dopant Concentration, and Electrical Properties of H2SO4- and BiCl3-Doped Polyacetylene Films -- Theory of C-U Profiling of a Nonuniformly Doped Semiconductor -- Recombination Current in Abrupt Semiconductor p-n Junctions -- A Photoelectrochemical Study of CuWO4 Single Crystals -- Growth and Physical Properties of TlBiTe2 Crystals -- Crystal Structure and Electrical Conductivity of [1,1'-bis(p-fluorophenyl)-4,4'-bipyridinium]2+ (TCNQ)22- and Electrical Characterisation of 51 TCNQ Simple Salts -- Effect of Light and Magnetic Field on Double Injection in Semiconductor Layers -- Device-related phenomena -- Ionization Bates for Electrons and Holes in GaAsP -- The Surface Degradation of the β'' -Al2O3 Solid Electrolyte Utilised in Na-S Battery Cells -- Short Notes -- Time-Resolved TEM of Laser-Annealing -- Growth of Single-Crystalline Regions on Amorphous Insulating Substrates by Zone-Melting Recrystallization -- Crystallisation Behaviour and Magnetic Properties of Al2O3•Fe2O3•MnO- SiO2 Glass -- Some Considerations on the Interfacial Free Energy between Dislocation Core and Bulk Material at High Temperatures -- Influence of Non-Linear Terms in the Flux Equation on the Particle Growth -- Thermal Conductivity of Pseudo-One-Dimensional Ferroelectric CsH2PO4 -- Effects of Electric Field on the II-III Phase Transition in Lithium Ammonium Sulphate and Its Deuterated Analogue -- Elastic Behaviour of Mixed Manganese-Magnesium Ferrites at Room Temperature -- Room Temperature Effects of y-Rays on the Dislocation Damping Coefficient in LiF Crystals -- On the Thermal Variation of Spontaneous Magnetization in Ternary NiCuD (D = Zn, Al, or Si) Alloys -- Magnetic Properties of Mixed Chalcogenides of Rare-Earth Elements and Uranium -- Effect of Particle Size on Mossbauer Parameters of α-Fe2O3 -- The Effect of Thermal Treatment on the Magnetic Anisotropy in Amorphous Fe-B Alloys -- Application of TSEE and TSD Methods to Investigations on Trap Levels in Yb2O3 Thin Films Deposited by Electron Beam Evaporation -- Pyroelectroluminescence Induced by Tourmaline -- Photoluminescence of Ternary Layered Crystals TIGaS2 -- Thermally Stimulated Current in PbI2 at Low Electric Fields -- Electron Emission during Frictional Contact between Metals and Polymers -- Negative Photoconductivity in Selenium Single Crystals -- Potential Distribution in Anisotropic Layers and Hall Plates with Arbitrary Geometries -- Properties of Al-Doped Bismuth Silicon Oxide -- Grain Boundaries in Germanium: Effects of Exposure to Plasmas -- Study of Materials with Uniaxial Anisotropy Using a Dielectric Resonator Arrangement -- Solar Cells of Schottky Type with Ni-PbPc Interface -- Pre-Printed Titles
Holdings
Item type Current library Call number URL Status Notes Barcode
eBook eBook Biblioteca "Angelicum" Pont. Univ. S.Tommaso d'Aquino Nuvola online online - DeGruyter (Browse shelf(Opens below)) Online access Not for loan (Accesso limitato) Accesso per gli utenti autorizzati / Access for authorized users (dgr)9783112501566

Author Index -- Classification Scheme -- Contents -- Review Article -- The I-h Junction as an Element of the Semiconductor Device -- Original Papers -- Original Papers and Short Notes -- The Dependence of Scanning Electron Acoustic Microscopy (SEAM) Imaging on Chopping and Detection Frequency for Metal Samples -- Contrast Investigations of Surface Acoustic Waves by Stroboscopic Topography -- Twist Disclinations in Thin SmC* Liquid Crystal -- A Complex High-Temperature Phase in Cu9Zr2 -- Kinetics of the Amorphous-Crystalline Transition in the Metallic Glass Fe40Ni40B20 -- Phase Transitions in Ferroelastic RbIn(MoO4)2 Crystals by Electron Paramagnetic Resonance of Cr 3+ Ions -- Lattice properties -- Method for Obtaining the Spectrum of Plastic Strains of Mesoscopic Volume Elements in Fatigued Materials Investigated by X-Rays -- Defects, atomistic aspects -- The Influence of Cu on Dislocation Motion in Si -- Steady-State Creep in Quartz -- Optical Study of Defects in Quenched MgO Crystals -- The Influence of Silver and Copper Electrolysis on the Radiation-Induced Optical Absorption of Natural Quartz -- The Influence of Foreigen Atoms on the Epitaxial Annealing of Ion-Implanted Silicon -- Reduction of Copper Contamination in Germanium on Heat Treatments above 700 °C -- Positron Annihilation Studies on BeO Powders -- The Annealing Behaviour of Arsenic-Implanted Silicon between 600 and 800 °C Characterized by Carrier Density Profiles -- Lateral Diffusion of Photodoped Silver in Amorphous Ge25Se75 Layers -- Plastic Deformation Behavior of ß-CuZn Single Crystals at Low and High Temperatures -- Electrical Activation and Damage Annealing of Boron-Implanted Silicon by Flash-Lamp Irradiation -- Magnetism -- High-Sensitivity Two-Component Measuring Technique of Inductances as Applied to the Investigation of Magnetic After-Effects -- Magnetic Properties of UGaCo -- Magnetic Properties of RhMnSi and CoTiSi -- Localized electronic states and transitions -- Glow Curves and the Emission of Flux Grown BaFCl :Gd Crystals -- Photoconductivity and Non-Equilibrium Carrier Recombination in CdIn2S4 Single Crystals -- The Retrapping Process in a Thermoluminescence Model with an Intra-Pair Metastable State -- Profile of Trapped Charge in Silicon Nitride Films in MNOS Structures -- Pre- and Post-Irradiation Deformation Effects on Thermoluminescence Studies in Barium-Doped NaCl Crystals -- Nature of Thermal Donors in Silicon Crystals -- Studies of Low-Energy Optical Absorption and Gap State Density oi a-CdS by the Constant Photocurrent Method -- Electric transport -- Oscillatory Dependence of the Interference Photomagnetoelectric Effect and Photoconductivity on Magnetic Field -- Morphology, Dopant Concentration, and Electrical Properties of H2SO4- and BiCl3-Doped Polyacetylene Films -- Theory of C-U Profiling of a Nonuniformly Doped Semiconductor -- Recombination Current in Abrupt Semiconductor p-n Junctions -- A Photoelectrochemical Study of CuWO4 Single Crystals -- Growth and Physical Properties of TlBiTe2 Crystals -- Crystal Structure and Electrical Conductivity of [1,1'-bis(p-fluorophenyl)-4,4'-bipyridinium]2+ (TCNQ)22- and Electrical Characterisation of 51 TCNQ Simple Salts -- Effect of Light and Magnetic Field on Double Injection in Semiconductor Layers -- Device-related phenomena -- Ionization Bates for Electrons and Holes in GaAsP -- The Surface Degradation of the β'' -Al2O3 Solid Electrolyte Utilised in Na-S Battery Cells -- Short Notes -- Time-Resolved TEM of Laser-Annealing -- Growth of Single-Crystalline Regions on Amorphous Insulating Substrates by Zone-Melting Recrystallization -- Crystallisation Behaviour and Magnetic Properties of Al2O3•Fe2O3•MnO- SiO2 Glass -- Some Considerations on the Interfacial Free Energy between Dislocation Core and Bulk Material at High Temperatures -- Influence of Non-Linear Terms in the Flux Equation on the Particle Growth -- Thermal Conductivity of Pseudo-One-Dimensional Ferroelectric CsH2PO4 -- Effects of Electric Field on the II-III Phase Transition in Lithium Ammonium Sulphate and Its Deuterated Analogue -- Elastic Behaviour of Mixed Manganese-Magnesium Ferrites at Room Temperature -- Room Temperature Effects of y-Rays on the Dislocation Damping Coefficient in LiF Crystals -- On the Thermal Variation of Spontaneous Magnetization in Ternary NiCuD (D = Zn, Al, or Si) Alloys -- Magnetic Properties of Mixed Chalcogenides of Rare-Earth Elements and Uranium -- Effect of Particle Size on Mossbauer Parameters of α-Fe2O3 -- The Effect of Thermal Treatment on the Magnetic Anisotropy in Amorphous Fe-B Alloys -- Application of TSEE and TSD Methods to Investigations on Trap Levels in Yb2O3 Thin Films Deposited by Electron Beam Evaporation -- Pyroelectroluminescence Induced by Tourmaline -- Photoluminescence of Ternary Layered Crystals TIGaS2 -- Thermally Stimulated Current in PbI2 at Low Electric Fields -- Electron Emission during Frictional Contact between Metals and Polymers -- Negative Photoconductivity in Selenium Single Crystals -- Potential Distribution in Anisotropic Layers and Hall Plates with Arbitrary Geometries -- Properties of Al-Doped Bismuth Silicon Oxide -- Grain Boundaries in Germanium: Effects of Exposure to Plasmas -- Study of Materials with Uniaxial Anisotropy Using a Dielectric Resonator Arrangement -- Solar Cells of Schottky Type with Ni-PbPc Interface -- Pre-Printed Titles

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Issued also in print.

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In English.

Description based on online resource; title from PDF title page (publisher's Web site, viewed 01. Dez 2022)