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Physica status solidi / A. Volume 91, Number 1, September 16 / ed. by Görlich.

Contributor(s): Material type: TextTextSeries: Physica status solidi / A ; Volume 91, Number 1Publisher: Berlin ; Boston : De Gruyter, [2022]Copyright date: ©1985Edition: Reprint 2021Description: 1 online resource (416 p.)Content type:
Media type:
Carrier type:
ISBN:
  • 9783112492970
  • 9783112492987
Subject(s): Other classification:
  • online - DeGruyter
Online resources: Available additional physical forms:
  • Issued also in print.
Contents:
Frontmatter -- Contents -- Original Papers -- Pressure-Induced Structural Transition in SrS -- Kinetics of Laser-Induced Crystallization of Amorphous Germanium Films -- Mössbauer Studies of Corrosion and Inhibition -- Lattice properties -- Theory of Melting. III. Nature of the Molten Glasses -- Third-Order Elastic Constants for Divalent Metal Oxides from Model Potentials -- Defects, atomistic aspects -- On the Behaviour oi Interaction of Copper Atoms with Lattice Defects in Quenched and Cold-Worked Ni-Cu Alloys -- Dynamic Characteristics of Radiation Defects in Silicon -- Deformation Studies on Cu-Ni-Sn Spinodal Alloys -- Dislocations in SmS Single Crystals -- Acoustic and Electron Microscopy Study of the Dislocation Structure in MgO Crystals -- Defects in Crystals under Pressure -- Magnetism -- Neutron Diffraction Study of the Spinel CoAlFeO4 -- Magnetic B-T Phase Diagram of Anion Substituted MnAs. Magnetocaloric Experiments -- Mössbauer, Electrical, and Magnetic Studies of the Sn-Doped Ni3Fe Alloy -- Remanent Magnetization in Randomly Distributed Cubic Particles -- Extended electronic states and transitions -- Optical Parameters of Chemically Deposited Tin Disulphide -- The Anisotropy of Refraction Nonlinearity and Vector Self-Diffraction in the Wide-Gap Semiconductors of CdS Type -- Localized electronic states and transitions -- Dotierungseigenschaften von Rhodium und Iridium in Silizium -- U-Shaped Distributions at Semiconductor Interfaces and the Nature of the Related Defect Centres -- Gold Solid Solution Decay in Silicon. II. Optical Nuclear Polarization Data -- Studies of Long-Wave Luminescence of Zinc Selenide Monocrystals -- On the Analysis of Complex Thermally Stimulated Capacitance Curves -- On the Purple and Violet Light Emissions in Thermoluminescing Quartz -- Degeneracy of Activator Energy Levels with Glassy Matrix Intrinsic States -- Electric transport -- Thermally Stimulated Depolarization Currents in Polypropylene Foils -- Relaxation of Tunnel Injection Limited Current in Case of Low Capture Probability -- Drift Mobility oi Holes in TlSbS2 -- Impurity Photoconductivity and Electrical Properties of Pb 1-x-y GexSnyTe Doped with Indium -- Anomalous Skin Effect in a Cylindrical Conductor -- Multiple Trapping Approach to the TSC Drift Experiment -- Hopping Conduction in NiF2 Thin Films as a Function of Their Crystallization Degree and Composition -- Thermoelectric Power of Glassy AS40Se 60-xTex -- Device-related phenomena -- Noise Investigation of the Impact Ionization in GaAs -- Ion Beam Mixing of Alternate Au-Ge Layer with GaAs -- Physical and Chemical Changes in the Surface Layer of GaAs Induced by Recoil Implantation of Al Atoms -- Errata -- On the Nature of Various Stacking Defects in 18R Martensite in Cu-Al Alloys. A Study by High Resolution Electron Microscopy -- Diffusion of Antimony (125Sb) in Polycrystalline Silicon -- Barrier Height and Its Instability in Al-Ultrathin SiO2 -n/p-Si Devices -- Short Notes -- On the Total Free Energy Differences, at Temperatures near the Melting Point, between Liquid Clusters and Liquid Flat Mono-Layers, Containing the Same Number of Atoms and Both Embedded in a F.C.C. Crystal Matrix -- Transition Temperature and Heat of Crystallization of Amorphous Bulk Gallium Antimonide Obtained by Rapid Quenching from the Melt at High Pressure -- Simulation of Recrystallization of the Depleted Zone at the Thermal Spike -- Chemical Bond Peculiarities of Elements in Amorphous Alloy Surface Layers on the Basis of Fe -- The Far Infrared Spectra of MgAl2-xFexO4 Spinel -- Low-Temperature Heat Capacity of ZnGa2S4, ZnGa2Se4, and ZnGa2Te4 Thiogallates -- Effect of High-Temperature Annealing on Phonon-Phonon Relaxation in Transmutationally-Doped Silicon Crystals -- On the Increased Sensitivity of X-Ray Rocking Curve Measurements by Triple-Crystal Diffractometry -- The Influence of Bi on Lattice Parameter and Carrier Concentration of PbTe -- Fracture Model for a Strained Anharmonic Chain Having Atoms with Two Degrees of Freedom -- EPR Monitoring of Annealing Effects in F-Implanted Amorphous Silicon -- Radiation-Enhanced Oxygen-Related Thermal Donor Formation in Neutron-Transmutation-Doped Floating-Zone Silicon -- ε`→ε Transformation in MnAl-C Alloys -- Magnetic Properties of MnAs Single Crystals -- Curie Temperatures of Some Substituted Nd2Fe14B Tetragonal Alloys -- The Effect of Dispersed PLZT Particles on the Electrical Conductivity of Lithium Iodide -- Impurity Photoconductivity of Indium Doped Lead Tin Telluride -- The Resistivity of Dissolved Hydrogen in Palladium and Amorphous Pd80Si20 -- Synthesis and Electrical Properties of LixMg1-xM2O4 (M = Ti, V) (0≤x≤1.0) -- Energy Band Models of n-ZnxCd1-x S—p-CdTe and n-ZnxCd1-x S — p-Si (0≤x≤1) Heterojunctions -- Emission from a Semi-Insulating Layer in AlGaAs-GaAs Double Heterostructures -- Pre-Printed Titles
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eBook eBook Biblioteca "Angelicum" Pont. Univ. S.Tommaso d'Aquino Nuvola online online - DeGruyter (Browse shelf(Opens below)) Online access Not for loan (Accesso limitato) Accesso per gli utenti autorizzati / Access for authorized users (dgr)9783112492987

Frontmatter -- Contents -- Original Papers -- Pressure-Induced Structural Transition in SrS -- Kinetics of Laser-Induced Crystallization of Amorphous Germanium Films -- Mössbauer Studies of Corrosion and Inhibition -- Lattice properties -- Theory of Melting. III. Nature of the Molten Glasses -- Third-Order Elastic Constants for Divalent Metal Oxides from Model Potentials -- Defects, atomistic aspects -- On the Behaviour oi Interaction of Copper Atoms with Lattice Defects in Quenched and Cold-Worked Ni-Cu Alloys -- Dynamic Characteristics of Radiation Defects in Silicon -- Deformation Studies on Cu-Ni-Sn Spinodal Alloys -- Dislocations in SmS Single Crystals -- Acoustic and Electron Microscopy Study of the Dislocation Structure in MgO Crystals -- Defects in Crystals under Pressure -- Magnetism -- Neutron Diffraction Study of the Spinel CoAlFeO4 -- Magnetic B-T Phase Diagram of Anion Substituted MnAs. Magnetocaloric Experiments -- Mössbauer, Electrical, and Magnetic Studies of the Sn-Doped Ni3Fe Alloy -- Remanent Magnetization in Randomly Distributed Cubic Particles -- Extended electronic states and transitions -- Optical Parameters of Chemically Deposited Tin Disulphide -- The Anisotropy of Refraction Nonlinearity and Vector Self-Diffraction in the Wide-Gap Semiconductors of CdS Type -- Localized electronic states and transitions -- Dotierungseigenschaften von Rhodium und Iridium in Silizium -- U-Shaped Distributions at Semiconductor Interfaces and the Nature of the Related Defect Centres -- Gold Solid Solution Decay in Silicon. II. Optical Nuclear Polarization Data -- Studies of Long-Wave Luminescence of Zinc Selenide Monocrystals -- On the Analysis of Complex Thermally Stimulated Capacitance Curves -- On the Purple and Violet Light Emissions in Thermoluminescing Quartz -- Degeneracy of Activator Energy Levels with Glassy Matrix Intrinsic States -- Electric transport -- Thermally Stimulated Depolarization Currents in Polypropylene Foils -- Relaxation of Tunnel Injection Limited Current in Case of Low Capture Probability -- Drift Mobility oi Holes in TlSbS2 -- Impurity Photoconductivity and Electrical Properties of Pb 1-x-y GexSnyTe Doped with Indium -- Anomalous Skin Effect in a Cylindrical Conductor -- Multiple Trapping Approach to the TSC Drift Experiment -- Hopping Conduction in NiF2 Thin Films as a Function of Their Crystallization Degree and Composition -- Thermoelectric Power of Glassy AS40Se 60-xTex -- Device-related phenomena -- Noise Investigation of the Impact Ionization in GaAs -- Ion Beam Mixing of Alternate Au-Ge Layer with GaAs -- Physical and Chemical Changes in the Surface Layer of GaAs Induced by Recoil Implantation of Al Atoms -- Errata -- On the Nature of Various Stacking Defects in 18R Martensite in Cu-Al Alloys. A Study by High Resolution Electron Microscopy -- Diffusion of Antimony (125Sb) in Polycrystalline Silicon -- Barrier Height and Its Instability in Al-Ultrathin SiO2 -n/p-Si Devices -- Short Notes -- On the Total Free Energy Differences, at Temperatures near the Melting Point, between Liquid Clusters and Liquid Flat Mono-Layers, Containing the Same Number of Atoms and Both Embedded in a F.C.C. Crystal Matrix -- Transition Temperature and Heat of Crystallization of Amorphous Bulk Gallium Antimonide Obtained by Rapid Quenching from the Melt at High Pressure -- Simulation of Recrystallization of the Depleted Zone at the Thermal Spike -- Chemical Bond Peculiarities of Elements in Amorphous Alloy Surface Layers on the Basis of Fe -- The Far Infrared Spectra of MgAl2-xFexO4 Spinel -- Low-Temperature Heat Capacity of ZnGa2S4, ZnGa2Se4, and ZnGa2Te4 Thiogallates -- Effect of High-Temperature Annealing on Phonon-Phonon Relaxation in Transmutationally-Doped Silicon Crystals -- On the Increased Sensitivity of X-Ray Rocking Curve Measurements by Triple-Crystal Diffractometry -- The Influence of Bi on Lattice Parameter and Carrier Concentration of PbTe -- Fracture Model for a Strained Anharmonic Chain Having Atoms with Two Degrees of Freedom -- EPR Monitoring of Annealing Effects in F-Implanted Amorphous Silicon -- Radiation-Enhanced Oxygen-Related Thermal Donor Formation in Neutron-Transmutation-Doped Floating-Zone Silicon -- ε`→ε Transformation in MnAl-C Alloys -- Magnetic Properties of MnAs Single Crystals -- Curie Temperatures of Some Substituted Nd2Fe14B Tetragonal Alloys -- The Effect of Dispersed PLZT Particles on the Electrical Conductivity of Lithium Iodide -- Impurity Photoconductivity of Indium Doped Lead Tin Telluride -- The Resistivity of Dissolved Hydrogen in Palladium and Amorphous Pd80Si20 -- Synthesis and Electrical Properties of LixMg1-xM2O4 (M = Ti, V) (0≤x≤1.0) -- Energy Band Models of n-ZnxCd1-x S—p-CdTe and n-ZnxCd1-x S — p-Si (0≤x≤1) Heterojunctions -- Emission from a Semi-Insulating Layer in AlGaAs-GaAs Double Heterostructures -- Pre-Printed Titles

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In English.

Description based on online resource; title from PDF title page (publisher's Web site, viewed 01. Dez 2022)