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Physica status solidi / A. Volume 12, Number 1, July 16 / ed. by Görlich.

Contributor(s): Material type: TextTextSeries: Physica status solidi / A ; Volume 12, Number 1Publisher: Berlin ; Boston : De Gruyter, [2021]Copyright date: ©1972Edition: Reprint 2021Description: 1 online resource (404 p.)Content type:
Media type:
Carrier type:
ISBN:
  • 9783112480670
  • 9783112480687
Subject(s): Other classification:
  • online - DeGruyter
Online resources: Available additional physical forms:
  • Issued also in print.
Contents:
Frontmatter -- Classification Scheme -- Contents -- Systematic List -- Review Article -- Electric and Magnetic Properties of Linear Conducting Chains -- Original Papers -- Mossbauer Study of Substituted Rare-Earth Ortho-Ferrites -- Hydrostatic Pressure Effect on Dislocations -- Stacking-Faults in Deformed Molybdenum Diselenide (MoSe2) -- The Epitaxial Growth of H.C.P. Cobalt Evaporated onto LiF Substrates -- Bound-to-Bound Emission at 510 nm in Cadmium Sulphide -- Effect of Impurity Gradient on the Time Delays and Q-Switching in Junction Lasers -- Electrical Transport Properties of Polycrystalline Tellurium Films Deposited on Mica -- Frequency Response of Si-Si02 Interface States on Thin Oxide MOS Capacitors -- Measurements of the Polarizability of Tungsten Adatoms on Tungsten (110) Planes -- An Elastic Model for a Dilute Semi-Crystalline Polymer -- Critical Superparamagnetism -- Dielectric Relaxation in Multi-Domain TGS Single Crystals -- Plastic Deformation and Brittleness of Fe-Co-V -- Effects of Traps on the Acoustoelectric Properties of Photoconducting CdSe -- Luminescence and Photoconductivity of Undoped p-GaSb -- X-Ray-Excited Optical Fluorescence from Pure and Rare-Earth-Doped Magnesium and Calcium Oxides -- The Hole Drift Mobility of Vitreous Selenium -- Photoconductive Properties of PbTe and Pb 0.8 Sn 0.2 Te Epitaxial Films -- Cation Transport in SiO2 -- Low-Frequency Current Oscillations in High-Resistivity, Au-Loped Silicon Junctions with Two Schottky Contacts -- NMR of 59Co in K3Co(CN)6 (II) -- Dielectric Properties of Lithium Sulphate at Radio and Microwave Frequencies -- Diffusion von Bor in Silizium aus dotierten Oxiden -- The Effect of the Initial Dislocation Density on Dislocation Multiplication and Work-Hardening Characteristics of Copper Single Crystals -- Gralvanomagnetic Effects in p-Type Germanium -- The Electrical Behavior of CdSe between Room Temperature and 600 °C -- Absorption and Excitation in Multiple Borrmann Diffraction -- Surface Properties of the Gallium Monochalcogenides -- Defect and Excess Regions of the Kikuchi Band -- Silver-Mercury Whiskers -- Localized States and Electron-Hole Processes in BiI3 Crystals -- Diffraction of Light in Magnetic Stripe-Structure -- Thermal Annealing of X-Ray-Induced Defects in Sr-Doped KCl Crystals -- Figure -- Short Notes -- On Some Acoustoelectronic Phenomena in Piezosemiconductors at Large Sound Intensities -- Preparation of ZnSiP2 by a Sublimation Technique -- Displacement of Arsenic Atoms in Silicon Crystal during Irradiation -- Electrical and Structure Sensitive Measurements on Ion Implanted GaAs -- Investigation of Polymorphic Transformations in Ag2Se -- On the Luminescence of LaTaO4 -- On the Influence of Nonstoichiometric Deviations of Cadmium Sulphide Powders on Its Electroluminescence Brightness -- Field Effect and Electrical Conductivity in InSb after Heat Treatment -- Interaction between Charges and Librational Excitations in Solid Metal-Ammonia Solutions -- Thermal Change of Permeability with Resonance Type Profiles in Ferrites and Garnets -- Operative Slip Systems inβ-Phase Ag-Cd and Ag-Zn Alloys -- Some Physical Properties of Vitreous As2Se3 Doped with III.A Group Elements -- A Relation of Photoelectric Work Function with Surface Composition on 2.89wt% Si-Fe(100) Single Crystal -- Frequency Dependent Conductivity of Anthracene Single Crystals under Monopolar Injection -- Influence of the Schottky Effect and the Peculiarities in the Distribution of the Applied Voltage on the Thickness of the Depletion Layer and the Volt-Ampere Characteristics of a Semiconductor with Blocking Contact -- Semiconducting Properties of Thallium Telluride -- The Effect of Impurity Atoms on the Recovery of Neutron Irradiated Copper at 78 °K -- Pre-printed Titles -- Author Index
Holdings
Item type Current library Call number URL Status Notes Barcode
eBook eBook Biblioteca "Angelicum" Pont. Univ. S.Tommaso d'Aquino Nuvola online online - DeGruyter (Browse shelf(Opens below)) Online access Not for loan (Accesso limitato) Accesso per gli utenti autorizzati / Access for authorized users (dgr)9783112480687

Frontmatter -- Classification Scheme -- Contents -- Systematic List -- Review Article -- Electric and Magnetic Properties of Linear Conducting Chains -- Original Papers -- Mossbauer Study of Substituted Rare-Earth Ortho-Ferrites -- Hydrostatic Pressure Effect on Dislocations -- Stacking-Faults in Deformed Molybdenum Diselenide (MoSe2) -- The Epitaxial Growth of H.C.P. Cobalt Evaporated onto LiF Substrates -- Bound-to-Bound Emission at 510 nm in Cadmium Sulphide -- Effect of Impurity Gradient on the Time Delays and Q-Switching in Junction Lasers -- Electrical Transport Properties of Polycrystalline Tellurium Films Deposited on Mica -- Frequency Response of Si-Si02 Interface States on Thin Oxide MOS Capacitors -- Measurements of the Polarizability of Tungsten Adatoms on Tungsten (110) Planes -- An Elastic Model for a Dilute Semi-Crystalline Polymer -- Critical Superparamagnetism -- Dielectric Relaxation in Multi-Domain TGS Single Crystals -- Plastic Deformation and Brittleness of Fe-Co-V -- Effects of Traps on the Acoustoelectric Properties of Photoconducting CdSe -- Luminescence and Photoconductivity of Undoped p-GaSb -- X-Ray-Excited Optical Fluorescence from Pure and Rare-Earth-Doped Magnesium and Calcium Oxides -- The Hole Drift Mobility of Vitreous Selenium -- Photoconductive Properties of PbTe and Pb 0.8 Sn 0.2 Te Epitaxial Films -- Cation Transport in SiO2 -- Low-Frequency Current Oscillations in High-Resistivity, Au-Loped Silicon Junctions with Two Schottky Contacts -- NMR of 59Co in K3Co(CN)6 (II) -- Dielectric Properties of Lithium Sulphate at Radio and Microwave Frequencies -- Diffusion von Bor in Silizium aus dotierten Oxiden -- The Effect of the Initial Dislocation Density on Dislocation Multiplication and Work-Hardening Characteristics of Copper Single Crystals -- Gralvanomagnetic Effects in p-Type Germanium -- The Electrical Behavior of CdSe between Room Temperature and 600 °C -- Absorption and Excitation in Multiple Borrmann Diffraction -- Surface Properties of the Gallium Monochalcogenides -- Defect and Excess Regions of the Kikuchi Band -- Silver-Mercury Whiskers -- Localized States and Electron-Hole Processes in BiI3 Crystals -- Diffraction of Light in Magnetic Stripe-Structure -- Thermal Annealing of X-Ray-Induced Defects in Sr-Doped KCl Crystals -- Figure -- Short Notes -- On Some Acoustoelectronic Phenomena in Piezosemiconductors at Large Sound Intensities -- Preparation of ZnSiP2 by a Sublimation Technique -- Displacement of Arsenic Atoms in Silicon Crystal during Irradiation -- Electrical and Structure Sensitive Measurements on Ion Implanted GaAs -- Investigation of Polymorphic Transformations in Ag2Se -- On the Luminescence of LaTaO4 -- On the Influence of Nonstoichiometric Deviations of Cadmium Sulphide Powders on Its Electroluminescence Brightness -- Field Effect and Electrical Conductivity in InSb after Heat Treatment -- Interaction between Charges and Librational Excitations in Solid Metal-Ammonia Solutions -- Thermal Change of Permeability with Resonance Type Profiles in Ferrites and Garnets -- Operative Slip Systems inβ-Phase Ag-Cd and Ag-Zn Alloys -- Some Physical Properties of Vitreous As2Se3 Doped with III.A Group Elements -- A Relation of Photoelectric Work Function with Surface Composition on 2.89wt% Si-Fe(100) Single Crystal -- Frequency Dependent Conductivity of Anthracene Single Crystals under Monopolar Injection -- Influence of the Schottky Effect and the Peculiarities in the Distribution of the Applied Voltage on the Thickness of the Depletion Layer and the Volt-Ampere Characteristics of a Semiconductor with Blocking Contact -- Semiconducting Properties of Thallium Telluride -- The Effect of Impurity Atoms on the Recovery of Neutron Irradiated Copper at 78 °K -- Pre-printed Titles -- Author Index

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http://purl.org/coar/access_right/c_16ec

Issued also in print.

Mode of access: Internet via World Wide Web.

In English.

Description based on online resource; title from PDF title page (publisher's Web site, viewed 01. Dez 2022)