Library Catalog
Amazon cover image
Image from Amazon.com

EPM 87. Energy Pulse and Particle Beam Modification of Materials : International Conference held September 7—11, 1987 Dresden, G.D.R. / ed. by Klaus Hennig.

Contributor(s): Material type: TextTextSeries: Physical Research ; 8Publisher: Berlin ; Boston : De Gruyter, [2022]Copyright date: 1988Edition: Reprint 2022Description: 1 online resource (598 p.) : With 470 Figures and 44 TablesContent type:
Media type:
Carrier type:
ISBN:
  • 9783112611197
  • 9783112611203
Subject(s): DDC classification:
  • 537.622 23
LOC classification:
  • QC611.6.S9 .E664 2022
Other classification:
  • online - DeGruyter
Online resources: Available additional physical forms:
  • Issued also in print.
Contents:
Frontmatter -- CONTENTS -- 1. Invited papers -- EPM'87 - STATE OF THE ART -- ACCELERATION OF MICROPARTICLES -- STUDY OF SILICON IMPLANTED BY HIGH DOSE OP IRON GROUP TRANSITION METALS -- MODIFICATIONS INDUCED BY PULSED LASER IRRADIATION OF METALLIC SURFACES IN PRESENCE OF A BREAKDOWN PLASMA IN THE AMBIENT GAS -- IMPURITY EFFECTS AT ION BEAM INDUCED DISORDERING OF HIGHLY DOPED SILICON -- DIRECTIONS OF DEVELOPMENT OF ION BEAM APPLICATIONS TO MODIFICATIONS OF TOOL PROPERTIES IN POLAND -- COMPARATIVE INVESTIGATION OF PHASE FORMATION IN Fe, A1 AND Ti AFTER NITROGEN ION IMPLANTATION -- MECHANISMS OP STRUCTURE FORMATION IN LASER PULSE VAPOUR DEPOSITION -- FUNDAMENTAL ASPECTS OP THERMALLY INDUCED SOI LAYER FORMATION -- PULSED ION IMPLANTATION OF SILICON WITH SELENIUM -- RAPID THERMAL PROCESSING FOR VLSI APPLICATION -- SILICON ON INSULATOR STRUCTURES FOR VLSI FORMED BY ION BEAM SYNTHESIS -- EFFECTS OP IMPURITY-DEFECT INTERACTIONS ON THE LATTICE SITE OCCUPATION OF IMPURITIES IN ION IMPLANTED METALS -- THE PROCESS OF COMPOUNDS FORMATION BY ION IMPLANTATION -- MICROSTRUCTURAL AND TRIBOLOGICAL STUDY OF IRON AND STEELS ION IMPLANTED WITH NITROGEN -- ELECTRON BEAU AND UV-LASER MICROSTRUCTURE FORMATION BY DECOMPOSITION 0? SOLID METAL RESINATE FILMS -- APPLICATIONS OF MICROFOCUSSED ION BEAMS -- STRUCTURE OF CRYSTAL FILMS PREPARED BY VAPOR DEPOSITION AND SIMULTANEOUS ION BOMBARDMENT -- MULTILAYER STRUCTURE CREATION AND CRYSTAL SURFACE MODIFICATION BY LASER-PRODUCED PLASMAS -- 2. Implantation into silicon -- RANGE PROFILE CALCULATIONS FOR THE HIGH ENERGY IMPLANTATION OF PHOSPHORUS INTO SILICON -- DEFECT FLUX EFFECTS DURING ION IMPLANTATION -- IMPURITY REDISTRIBUTION IN SILICON DUE TO ION BOMBARDMENT -- 6 MeV Ni HIGH DOSE IMPLANTATION INTO SILICON -- ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF DOPED AMORPHOUS SILICON LAYERS -- HIGH ENERGY IMPLANTATION AND ANNEALING OF PHOSPHORUS IN SILICON -- DEPTH PROFILES OF RADIATION DAMAGE AFTER HIGH ENERGY SELF-IRRADIATION OF SILICON FROM OPTICAL REFLECTIVITY MEASUREMENTS ON BEVELLED SAMPLES -- JONDTRON - PI HIGH INTENSITY ION PULSE PRODUCING HflCHINE FDR MATERIAL PROCESSING -- A HOVEL ETCH STOP SYSTEM BASED ON HIGH DOSE NITROGEN IMPLANTATION FOR THIN CRYSTALLINE SILICON LAYER FORMATION -- EFFECT OF HIGH ENERGY HYDROGEN BEAM INTENSITY ON DEFECT FORMATION IN SILICON -- 3. Implantation and annealing of compound semiconductor -- RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs BY MEANS OF A GRAPHITE STRIP HEATER -- SILICON AND CHROMIUM DISTRIBUTION IN IMPLANTED AND SHORT TIME ANNEALED GaAs -- INVESTIGATION OF LOW-TEMPERATURE RECRYSTALLIZATION OF ION IMPLANTED AMORPHOUS GaAs LAYERS -- INVESTIGATION OF THE TEMPERATURE DEPENDENCE OF THE DECHANNELING III WEAKLY DAMAGED GaAs -- Short time threshold for electrical activation of implanted and annealed GaAs -- ELECTRICAL PROPERTIES OF RAPID THERMAL ANNEALED IMPLANTED GaAS -- FORMATION OF AMORPHOUS GaP LAYERS BY ION IMPLANTATION AT LOW TEMPERATURE -- RESIDUAL DEFECTS IN IMPLANTED GaAs AFTER RAPID THERMAL ANNEALING WITH INCOHERENT LIGHT -- HALOGEN LAMP ANNEALING OF Au AND AuGe CONTACTS TO GaAs -- 4. Implantation into metals -- FORMATION AND STRUCTURE OF IMPLANTATION-INDUCED AMORPHOUS ALLOYS -- STRUCTURAL AND PHASE TRANSFORMATION IN PULSED ION IMPLANTATION OF BCC METALS -- STRUCTURAL MODIFICATIONS OF NITROGEN IMPLANTED HIGH-SPEED STEEL -- WEAR PROPERTIES OF HIGH-SPEED STEEL IMPLANTED WITH NITROGEN AT VARIOUS THERMAL CONDITIONS -- TRIBOLOGICAL PROPERTIES OF ION IMPLANTED Fe-Cr STEELS -- MICROSTRUCTURE OF TI-IMPLANTED FE -- DOSE AND TEMPERATURE DEPENDENCE OE ARSENIC REDISTRIBUTION IN ION IMPLANTED NICKEL -- INFLUENCE OF TEMPERATURE ON NITROGEN IMPLANTED IRON -- CONVERSION ELECTRON MOSSBAUER SPECTROSCOPIC STUDIES OP IRON IMPLANTED WITH BORON, CARBON AND PHOSPHORUS -- WEAR BEHAVIOUR OF ION IMPLANTED STEELS AND HARD METALS -- HEAT PRODUCTION DURING ION IMPLANTATION INTO METALS AND ALLOYS -- COMPOSITION DEPENDENCE OF MAGNETIZATION OF ION IMPLANTED COBALT LAYERS -- AMORPHIZATION PROCESSES STUDIED BY HIGH DOSE ION IMPLANTATION INTO METALS -- Implantation effects on microcrack initation in fatigued metals -- STRUCTURAL MODIFICATIONS OP Hi EVAPORATED THIN FILMS IRRADIATED WITH P+ IONS -- 5. Transient heat treatment of semiconductors -- ANNEALING OF LASER INDUCED DEFECTS IN SILICON -- ORIGIN OP THE DEFECTS WITH DEEP LEVELS IN PULSED ANNEALED SILICON -- ANNEALING OP SILICON BY INCOHERENT LIGHT PULSES OP 50 ms -10 s DURATIONS -- CONTINUOUS ELECTRON BEAM ANNEALING OP ION-IMPLANTED SILICON -- IN SITU ANNEALING OP ION-IMPLANTED SILICON IN A HIGH-VOLTAGE ELECTRON MICROSCOPE (HVEM) -- Laser beam induced microdefects in silicon detected by SEM and TEM -- RAPID THERMAL ANNEALING AND PROPERTIES OF B AND P IMPLANTED SILICON -- THE EFFECT OF OXYGEN ON ELECTRICAL ACTIVATION AND DIFFUSION OF As IN Si BY RTA -- INFLUENCE OF ELECTRON-BEAM AND HALOGEN LAMP ANNEALING ON THE ELECTRICAL PROPERTIES OF MOS STRUCTURES -- ELECTRICAL ACTIVATION OF BORON IMPLANTED SILICON DURING THE EARLY STAGE OF RAPID THERMAL ANNEALING -- NONEQUILIBRIUM IMPURITY SEGREGATION IN PHOSPHORUS IMPLANTED POLYCRYSTALIINE SILICON SUBJECTED TO TRANSIENT HEATING -- TIME DEPENDENCE OP BORON DIFFUSIVITY DURING PULSE ANNEALING OP ION-IMPLANTED SILICON -- COMPARATIVE ANALYSIS BY THE X-RAY DIFFRACTION METHOD 0? PULSE AND THERMAL ANNEALED ION-IMPLANTED SILICON -- INTERNAL MECHANICAL STRESS AND ELECTRICAL ACTIVATION OF IMPURITY IN ION—IMPLANTED Si DURING PULSE ANNEALING -- THE 13 MeV ELECTRON PULSE INDUCED MODIFICATION OF DYNAMIC PARAMETERS OF SILICON DIODES,THYRYSTORS AND TRANSISTORS -- ACTIVATION OF SHALLOW As+ IMPLANTS IN (100) SILICON BY INCOHERENT LIGHT ANNEALING -- ELECTRON BEAM HEAT SOURCE OF MODIFIED POWER DENSITY DISTRIBUTION -- NANOSECOND POISE RECRISTALLIZATION Of HIGHLY DOSED SILICON LAYERS -- THERMAL STRESSES IN SILICON WAFER DURING PULSED PLASH ANNEALING -- MULTIPLE PULSE IMPLANTATION DOPED LAYERS IN SILICON -- PULSE IMPLANTATION DOPING - APPLICATION FOR PHOTOVOLTAIC JUNCTION FORMATION -- EFFECT OF OXYGEN RECOILS ON THE DEFECT ANNEALING IN Si DURING RTA -- ANALYTICAL EVALUATION OF THE IMPURITY REDISTRIBUTION DURING POST-IMPLANTATION LASER ANNEALING -- RAPID THERMAL ANNEALING : TEMPERATURE AND ACTIVATION UNIFORMITIES - COOLING SPEEDS AND MINIMUM DIFFUSION LENGTHS -- 6. Formation of silicides -- THE INFLUENCE OF IMPLANTATION PARAMETERS AND ANNEALING CONDITIONS ON THE FORMATION AND PROPERTIES OF MoSi2 LAYERS -- LIQUID PHASE GROWTH OF FeSi2 -- LIQUID PHASE GROWTH OF NiSi2 AND CoSi2 -- FORMATION OP EPITAXIAL NiSi2 LAYER BY HIGH DOSE ION IMPLANTATION AND RAPID THERMAL ANNEALING -- REDISTRIBUTION OP IMPLANTED DOPANTS IN MoSi2/POLY-Si STRUCTURES DURING SILICIDATION TEMPERING -- R.B.S. STUDIES OF WSi2 FORMATION FROM Si/W/Si LAYERS BY W + ION MIXING FOLLOWED BY ANNEALING WHEN THE W FILMS CONTAIN OXYGEN -- ELECTRICAL RESISTIVITY OP SILICON IMPLANTED BY HIGH DOSE Cr+ IONS AFTER LASER ANNEALING -- CRYSTALLINE AND AMORPHOUS Cr-Si ALLOY FORMATION WITH ENERGETIC PULSES -- 7. Ion beam assisted deposition and ion beam mixing -- COMPUTER SIMULATION OP ION BEAM MIXING OF COBALT ON SILICON -- I-V AND C-V STUDIES OF ION MIXED Au/GaAs (100) CONTACTS - EFFECT OF THE ANNEALING -- ION MIXING IN GLASSES -- ON THE FORMATION OF CARBON FILMS BY ION BEAM ASSISTED METHOD -- ION MIXING IN Cu/Au MULTILAYERED THIN FILMS -- A MODEL OP SIMULTANEOUS QR ALTERNATING ION IMPLANTATION IN FILMS AND COATINGS BEING DEPOSITED -- INFLUENCE OF HIGH ENERGY PARTICLES ON THIN FILM FORMATION BY LPVD -- MODIFICATION OF SURFACE PROPERTIES OF TOOL STEEL BY ION BEAM MIXING -- Computer simulation and and experimental measurements of recoil implantation of gold into silicon -- 8.
Deposition, modification and structurization -- ION BEAM MODIFICATION OF THIN POLYIMIDE FILMS -- STUDY OF ELECTRICAL AND OPTICAL PROPERTIES OF FUSED QUARTZ IMPLANTED BY HIGH DOSE Cr+- AND Fe+-IONS -- ION BOMBARDMENT INDUCED MODIFICATION OF La6 -- Pyrolitic laser deposition of tungsten -- PULSED AND cw LASER SYNTHESIS OF III-VI AND IV-VI COMPOUND FILMS -- MODIFICATION OP ELECTROCHROMIC W03 FILMS BY NANOSECOND LASER PULSES -- HARDENING OF CEMENTED CARBIDES BY LASER PULSE IRRADIATION -- TRANSIENT NUCLEATION IN LASER PLASMA DEPOSITION OF THIN FILMS -- THEORETICAL MODEL OF LASER GENERATED PLASMA FOR THIN FILM DEPOSITION -- EXPERIMENTAL SET-UP FOB LASER PULSE VAPOUR DEPOSITION IN UHV -- CHARACTERIZATION OF THE LPVD-PROCESS BY MICHELSON INTERFEROMETRY -- ON DEFECTS AND STRESSES IN THIN FILMS -- ESR STUDY OF SiN FILMS PREPARED BY ECR PLASMA CVD METHOD -- 9. Silicon on insulator (SOI) -- ELECTRICAL PROPERTIES OF SILICON FILMS ON Si02 FORMED BY EXPLOSIVE CRYSTALLIZATION -- FORMATION OF BURIED SILICON NITRIDE AND OXYNITRIDE LAYERS IN SILICON BY ION BEAM SYNTHESIS -- MODELING OF 18O TRACER STUDIES OF THE OXYGEN REDISTRIBUTION DURING FORMATION OF Si02 LAYERS BY HIGH DOSE IMPLANTATION -- IMPROVED MODELING OF OXYGEN DEPTH PROFILES IN HIGH DOSE OXYGEN-IMPLANTED SILICON -- THEORETICAL INVESTIGATION OF THERMALLY ACTIVATED AND ION BEAM INDUCED LATERAL SOLID-PHASE EPITAXY -- MATHEMATICAL MODELLING OF THE CAPACITANCE CHARACTERISTICS AND THE THRESHOLD VOLTAGE OF A MOS STRUCTURE ON A THIN SILICON SUBSTRATE -- INFLUENCE OF THERMAL GRADIENT ON THE RECRYSTALLIZATION OF THICK POLYCRYSTALLINE SILICON ON SIO2 -- ELECTRICAL CHARACTERIZATION OP THICK SOI-FILMS -- A MODEL FOR NITROGEN REDISTRIBUTION PROCESSES IN HIGH DOSE NITROGEN-IMPLANTED SILICON -- PHYSICAL MODEL, PROPERTIES AND OPTOELECTRONICAL APPLICATION OF HYDROGEN IMPLANTED SOI MOSFET'S -- PULSE LASER INDUCED IGNITION OF EXPLOSIVE LIQUID-PHASE CRYSTALLIZATION OF AMORPHOUS SILICON -- COMPUTER SIMULATION OF GRAIN BOUNDARY CONFINEMENT AT ZONE MELTING RECRYSTALLIZATION -- STUDY OF STRUCTURE FORMATION BY THE MELT INSTABILITY OF SILICON AT LIGHT HEATING -- High Throughput CO2 laser Recrystallization for 3D integrated Devices -- FORMATION OP BURIED NITRIDE LAYERS BELOW NiSi2 BY ION IMPLANTATION -- 10. Diagnostics and ion microfocus beam -- EMISSION CHARACTERISTICS OF EUTECTIC ALLOY LIQUID METAL ION SOURCES FOR FOCUSED ION BEAM SYSTEMS -- CHARACTERISTICS OF AN ExB MASS SEPARATOR FOR FOCUSED ION BEAM SYSTEMS -- CHANNELING EFFECTS AT LOW-ENERGY ION IMPLANTATION -- POSSIBILITIES OF THE TDPAC METHOD FOR THE DIAGNOSIS OF RADIATION DAMAGE AND ANNEALING PROCESS IN IMPLANTED SEMICONDUCTORS -- QUADRUPOLE-SIMS-MEASUREMENTS OP IMPURITIES IN SiO2/Si-STRUCTURES -- HIGH TEMPERATURE ION SOURCE FOR IMPLANTATION PURPOSES -- A HEW CONSTRUCTION OF ION IMPLANTER AT THE SLOVAK TECHNICAL UNIVERSITY -- THERMAL PROCESSES UNDER INTERACTION OP FOCUSED ION BEAMS WITH SEMICONDUCTOR CRYSTALS -- MASS AND ENERGY DISTRIBUTION MEASUREMENTS OF AuSi-LIQUID-METAL-ION SOURCE -- CLUSTER IONS IN LASER MASS SPECTRA OF WO3/C TARGETS -- ANALYSIS OF Ar ION BEAM ETCHING (IBE) INDUCED SURFACE DAMAGE OF GaAs BY MEANS OF 4+CU ADSORPTION / AUTORADIOGRAPHY AND RBS / CHANNELING -- A MaV ION PROBE AT TU PRAGUE -- 11. Fundamentals -- COMPUTER STUDIES OF THE STATISTICAL DISTRIBUTION FUNCTIONS OF PARTICLES MOVING IN COLLISION CASCADES -- MONTE CARLO CALCULATIONS OF HIGH DOSE ION BOMBARDMENT ACCOUNTING FOR DYNAMIC TARGET MODIFICATION -- ENERGY LOSS OF CHANNELED HELIUM IONS BY MONTE CARLO SIMULATION -- TRANSMISSION SPUTTERING OF THIN GOLD FILMS: A COMPUTER SIMULATION STUDY -- MODELLING OP NONEQUILIBRIUM PHASE TRANSITIONS INITIATED BY SHORT LASER PULSES IN SILICON -- INTERMEDIATE CRYSTALLIZATION OP AMORPHOUS SILICON LAYERS AT NANOSECOND FUISED LASER ANNEALING -- INVESTIGATIONS OB THE AMORPHOUS/CRYSTALLINE PHASE TRANSITION IN IONIMPLANTED SILICON BY MEANS OP CROSS-SECTIONAL TEM IMAGING -- NUMERICAL MODELLING OF SILICON SAMPLE MELTING BY HIGH-INTENSITY ION-BEAM PULSE -- SIMULATION OP NANOSECOND LASER ANNEALING OP SILICON ALLOWING FOR CRYSTALLIZATION OP SUPERCOOLED MELT -- PHASE TRANSITIONS INDUCED BY NANOSECOND LASER HEATING OP AMORPHIZED SILICON -- THEORETICAL TREATMENT OF THE IGNITION OF EXPLOSIVE LIQUID PHASE CRYSTALLIZATION PROCESSES -- MODELLING OF THE FACETED GROWTH DURING LATERAL EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS SILICON -- LASER PULSE-INDUCED PHASE TRANSFORMATIONS VISUALIZED BY NANOSECOND-EXPOSURE ELECTRON MICROSCOPY -- THERMAL PULSED ANNEALINS WITH ACCOUNT OF PLASMA EFFECT -- AMORPHOUS SILICON MELTING TEMPERATURE VERSUS SELF-SUSTAINING CRYSTALLIZATION KINETICS -- 12. Miscellaneous -- LONGITUDINAL-SPREAD CHARACTERISTICS OF RADIATION DEFECTS IN TELLURIUM-IMPLANTED GERMANIUM -- ANODIC OXIDATION OF Si AS A LOW TEMPERATURE OXIDATION METHOD FOR PASSIVATION OF SEMICONDUCTOR DEVICES -- SELF-ORGANIZATION PHENOMENA DURING CHARGE TRANSPORT IN BORON DOPED POLYORYSTALLINE SILICON -- LUMINESCENCE OP CUBIC BORON NITRIDE IMPLANTED WITH HIGH ENERGY IONS -- LUMINESCENCE OP DIAMOND IMPLANTED WITH HIGH ENERGY CARBON IONS -- MODIFICATION OF SOLIDS DUE TO THE EXPOSURE TO HIGH TEMPERATURE PLASMAS -- STRUCTURE AND PROPERTIES OF NANOMETER-SIZED SOLIDS -- 13. Author Index -- Backmatter
Holdings
Item type Current library Call number URL Status Notes Barcode
eBook eBook Biblioteca "Angelicum" Pont. Univ. S.Tommaso d'Aquino Nuvola online online - DeGruyter (Browse shelf(Opens below)) Online access Not for loan (Accesso limitato) Accesso per gli utenti autorizzati / Access for authorized users (dgr)9783112611203

Frontmatter -- CONTENTS -- 1. Invited papers -- EPM'87 - STATE OF THE ART -- ACCELERATION OF MICROPARTICLES -- STUDY OF SILICON IMPLANTED BY HIGH DOSE OP IRON GROUP TRANSITION METALS -- MODIFICATIONS INDUCED BY PULSED LASER IRRADIATION OF METALLIC SURFACES IN PRESENCE OF A BREAKDOWN PLASMA IN THE AMBIENT GAS -- IMPURITY EFFECTS AT ION BEAM INDUCED DISORDERING OF HIGHLY DOPED SILICON -- DIRECTIONS OF DEVELOPMENT OF ION BEAM APPLICATIONS TO MODIFICATIONS OF TOOL PROPERTIES IN POLAND -- COMPARATIVE INVESTIGATION OF PHASE FORMATION IN Fe, A1 AND Ti AFTER NITROGEN ION IMPLANTATION -- MECHANISMS OP STRUCTURE FORMATION IN LASER PULSE VAPOUR DEPOSITION -- FUNDAMENTAL ASPECTS OP THERMALLY INDUCED SOI LAYER FORMATION -- PULSED ION IMPLANTATION OF SILICON WITH SELENIUM -- RAPID THERMAL PROCESSING FOR VLSI APPLICATION -- SILICON ON INSULATOR STRUCTURES FOR VLSI FORMED BY ION BEAM SYNTHESIS -- EFFECTS OP IMPURITY-DEFECT INTERACTIONS ON THE LATTICE SITE OCCUPATION OF IMPURITIES IN ION IMPLANTED METALS -- THE PROCESS OF COMPOUNDS FORMATION BY ION IMPLANTATION -- MICROSTRUCTURAL AND TRIBOLOGICAL STUDY OF IRON AND STEELS ION IMPLANTED WITH NITROGEN -- ELECTRON BEAU AND UV-LASER MICROSTRUCTURE FORMATION BY DECOMPOSITION 0? SOLID METAL RESINATE FILMS -- APPLICATIONS OF MICROFOCUSSED ION BEAMS -- STRUCTURE OF CRYSTAL FILMS PREPARED BY VAPOR DEPOSITION AND SIMULTANEOUS ION BOMBARDMENT -- MULTILAYER STRUCTURE CREATION AND CRYSTAL SURFACE MODIFICATION BY LASER-PRODUCED PLASMAS -- 2. Implantation into silicon -- RANGE PROFILE CALCULATIONS FOR THE HIGH ENERGY IMPLANTATION OF PHOSPHORUS INTO SILICON -- DEFECT FLUX EFFECTS DURING ION IMPLANTATION -- IMPURITY REDISTRIBUTION IN SILICON DUE TO ION BOMBARDMENT -- 6 MeV Ni HIGH DOSE IMPLANTATION INTO SILICON -- ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF DOPED AMORPHOUS SILICON LAYERS -- HIGH ENERGY IMPLANTATION AND ANNEALING OF PHOSPHORUS IN SILICON -- DEPTH PROFILES OF RADIATION DAMAGE AFTER HIGH ENERGY SELF-IRRADIATION OF SILICON FROM OPTICAL REFLECTIVITY MEASUREMENTS ON BEVELLED SAMPLES -- JONDTRON - PI HIGH INTENSITY ION PULSE PRODUCING HflCHINE FDR MATERIAL PROCESSING -- A HOVEL ETCH STOP SYSTEM BASED ON HIGH DOSE NITROGEN IMPLANTATION FOR THIN CRYSTALLINE SILICON LAYER FORMATION -- EFFECT OF HIGH ENERGY HYDROGEN BEAM INTENSITY ON DEFECT FORMATION IN SILICON -- 3. Implantation and annealing of compound semiconductor -- RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs BY MEANS OF A GRAPHITE STRIP HEATER -- SILICON AND CHROMIUM DISTRIBUTION IN IMPLANTED AND SHORT TIME ANNEALED GaAs -- INVESTIGATION OF LOW-TEMPERATURE RECRYSTALLIZATION OF ION IMPLANTED AMORPHOUS GaAs LAYERS -- INVESTIGATION OF THE TEMPERATURE DEPENDENCE OF THE DECHANNELING III WEAKLY DAMAGED GaAs -- Short time threshold for electrical activation of implanted and annealed GaAs -- ELECTRICAL PROPERTIES OF RAPID THERMAL ANNEALED IMPLANTED GaAS -- FORMATION OF AMORPHOUS GaP LAYERS BY ION IMPLANTATION AT LOW TEMPERATURE -- RESIDUAL DEFECTS IN IMPLANTED GaAs AFTER RAPID THERMAL ANNEALING WITH INCOHERENT LIGHT -- HALOGEN LAMP ANNEALING OF Au AND AuGe CONTACTS TO GaAs -- 4. Implantation into metals -- FORMATION AND STRUCTURE OF IMPLANTATION-INDUCED AMORPHOUS ALLOYS -- STRUCTURAL AND PHASE TRANSFORMATION IN PULSED ION IMPLANTATION OF BCC METALS -- STRUCTURAL MODIFICATIONS OF NITROGEN IMPLANTED HIGH-SPEED STEEL -- WEAR PROPERTIES OF HIGH-SPEED STEEL IMPLANTED WITH NITROGEN AT VARIOUS THERMAL CONDITIONS -- TRIBOLOGICAL PROPERTIES OF ION IMPLANTED Fe-Cr STEELS -- MICROSTRUCTURE OF TI-IMPLANTED FE -- DOSE AND TEMPERATURE DEPENDENCE OE ARSENIC REDISTRIBUTION IN ION IMPLANTED NICKEL -- INFLUENCE OF TEMPERATURE ON NITROGEN IMPLANTED IRON -- CONVERSION ELECTRON MOSSBAUER SPECTROSCOPIC STUDIES OP IRON IMPLANTED WITH BORON, CARBON AND PHOSPHORUS -- WEAR BEHAVIOUR OF ION IMPLANTED STEELS AND HARD METALS -- HEAT PRODUCTION DURING ION IMPLANTATION INTO METALS AND ALLOYS -- COMPOSITION DEPENDENCE OF MAGNETIZATION OF ION IMPLANTED COBALT LAYERS -- AMORPHIZATION PROCESSES STUDIED BY HIGH DOSE ION IMPLANTATION INTO METALS -- Implantation effects on microcrack initation in fatigued metals -- STRUCTURAL MODIFICATIONS OP Hi EVAPORATED THIN FILMS IRRADIATED WITH P+ IONS -- 5. Transient heat treatment of semiconductors -- ANNEALING OF LASER INDUCED DEFECTS IN SILICON -- ORIGIN OP THE DEFECTS WITH DEEP LEVELS IN PULSED ANNEALED SILICON -- ANNEALING OP SILICON BY INCOHERENT LIGHT PULSES OP 50 ms -10 s DURATIONS -- CONTINUOUS ELECTRON BEAM ANNEALING OP ION-IMPLANTED SILICON -- IN SITU ANNEALING OP ION-IMPLANTED SILICON IN A HIGH-VOLTAGE ELECTRON MICROSCOPE (HVEM) -- Laser beam induced microdefects in silicon detected by SEM and TEM -- RAPID THERMAL ANNEALING AND PROPERTIES OF B AND P IMPLANTED SILICON -- THE EFFECT OF OXYGEN ON ELECTRICAL ACTIVATION AND DIFFUSION OF As IN Si BY RTA -- INFLUENCE OF ELECTRON-BEAM AND HALOGEN LAMP ANNEALING ON THE ELECTRICAL PROPERTIES OF MOS STRUCTURES -- ELECTRICAL ACTIVATION OF BORON IMPLANTED SILICON DURING THE EARLY STAGE OF RAPID THERMAL ANNEALING -- NONEQUILIBRIUM IMPURITY SEGREGATION IN PHOSPHORUS IMPLANTED POLYCRYSTALIINE SILICON SUBJECTED TO TRANSIENT HEATING -- TIME DEPENDENCE OP BORON DIFFUSIVITY DURING PULSE ANNEALING OP ION-IMPLANTED SILICON -- COMPARATIVE ANALYSIS BY THE X-RAY DIFFRACTION METHOD 0? PULSE AND THERMAL ANNEALED ION-IMPLANTED SILICON -- INTERNAL MECHANICAL STRESS AND ELECTRICAL ACTIVATION OF IMPURITY IN ION—IMPLANTED Si DURING PULSE ANNEALING -- THE 13 MeV ELECTRON PULSE INDUCED MODIFICATION OF DYNAMIC PARAMETERS OF SILICON DIODES,THYRYSTORS AND TRANSISTORS -- ACTIVATION OF SHALLOW As+ IMPLANTS IN (100) SILICON BY INCOHERENT LIGHT ANNEALING -- ELECTRON BEAM HEAT SOURCE OF MODIFIED POWER DENSITY DISTRIBUTION -- NANOSECOND POISE RECRISTALLIZATION Of HIGHLY DOSED SILICON LAYERS -- THERMAL STRESSES IN SILICON WAFER DURING PULSED PLASH ANNEALING -- MULTIPLE PULSE IMPLANTATION DOPED LAYERS IN SILICON -- PULSE IMPLANTATION DOPING - APPLICATION FOR PHOTOVOLTAIC JUNCTION FORMATION -- EFFECT OF OXYGEN RECOILS ON THE DEFECT ANNEALING IN Si DURING RTA -- ANALYTICAL EVALUATION OF THE IMPURITY REDISTRIBUTION DURING POST-IMPLANTATION LASER ANNEALING -- RAPID THERMAL ANNEALING : TEMPERATURE AND ACTIVATION UNIFORMITIES - COOLING SPEEDS AND MINIMUM DIFFUSION LENGTHS -- 6. Formation of silicides -- THE INFLUENCE OF IMPLANTATION PARAMETERS AND ANNEALING CONDITIONS ON THE FORMATION AND PROPERTIES OF MoSi2 LAYERS -- LIQUID PHASE GROWTH OF FeSi2 -- LIQUID PHASE GROWTH OF NiSi2 AND CoSi2 -- FORMATION OP EPITAXIAL NiSi2 LAYER BY HIGH DOSE ION IMPLANTATION AND RAPID THERMAL ANNEALING -- REDISTRIBUTION OP IMPLANTED DOPANTS IN MoSi2/POLY-Si STRUCTURES DURING SILICIDATION TEMPERING -- R.B.S. STUDIES OF WSi2 FORMATION FROM Si/W/Si LAYERS BY W + ION MIXING FOLLOWED BY ANNEALING WHEN THE W FILMS CONTAIN OXYGEN -- ELECTRICAL RESISTIVITY OP SILICON IMPLANTED BY HIGH DOSE Cr+ IONS AFTER LASER ANNEALING -- CRYSTALLINE AND AMORPHOUS Cr-Si ALLOY FORMATION WITH ENERGETIC PULSES -- 7. Ion beam assisted deposition and ion beam mixing -- COMPUTER SIMULATION OP ION BEAM MIXING OF COBALT ON SILICON -- I-V AND C-V STUDIES OF ION MIXED Au/GaAs (100) CONTACTS - EFFECT OF THE ANNEALING -- ION MIXING IN GLASSES -- ON THE FORMATION OF CARBON FILMS BY ION BEAM ASSISTED METHOD -- ION MIXING IN Cu/Au MULTILAYERED THIN FILMS -- A MODEL OP SIMULTANEOUS QR ALTERNATING ION IMPLANTATION IN FILMS AND COATINGS BEING DEPOSITED -- INFLUENCE OF HIGH ENERGY PARTICLES ON THIN FILM FORMATION BY LPVD -- MODIFICATION OF SURFACE PROPERTIES OF TOOL STEEL BY ION BEAM MIXING -- Computer simulation and and experimental measurements of recoil implantation of gold into silicon -- 8.

Deposition, modification and structurization -- ION BEAM MODIFICATION OF THIN POLYIMIDE FILMS -- STUDY OF ELECTRICAL AND OPTICAL PROPERTIES OF FUSED QUARTZ IMPLANTED BY HIGH DOSE Cr+- AND Fe+-IONS -- ION BOMBARDMENT INDUCED MODIFICATION OF La6 -- Pyrolitic laser deposition of tungsten -- PULSED AND cw LASER SYNTHESIS OF III-VI AND IV-VI COMPOUND FILMS -- MODIFICATION OP ELECTROCHROMIC W03 FILMS BY NANOSECOND LASER PULSES -- HARDENING OF CEMENTED CARBIDES BY LASER PULSE IRRADIATION -- TRANSIENT NUCLEATION IN LASER PLASMA DEPOSITION OF THIN FILMS -- THEORETICAL MODEL OF LASER GENERATED PLASMA FOR THIN FILM DEPOSITION -- EXPERIMENTAL SET-UP FOB LASER PULSE VAPOUR DEPOSITION IN UHV -- CHARACTERIZATION OF THE LPVD-PROCESS BY MICHELSON INTERFEROMETRY -- ON DEFECTS AND STRESSES IN THIN FILMS -- ESR STUDY OF SiN FILMS PREPARED BY ECR PLASMA CVD METHOD -- 9. Silicon on insulator (SOI) -- ELECTRICAL PROPERTIES OF SILICON FILMS ON Si02 FORMED BY EXPLOSIVE CRYSTALLIZATION -- FORMATION OF BURIED SILICON NITRIDE AND OXYNITRIDE LAYERS IN SILICON BY ION BEAM SYNTHESIS -- MODELING OF 18O TRACER STUDIES OF THE OXYGEN REDISTRIBUTION DURING FORMATION OF Si02 LAYERS BY HIGH DOSE IMPLANTATION -- IMPROVED MODELING OF OXYGEN DEPTH PROFILES IN HIGH DOSE OXYGEN-IMPLANTED SILICON -- THEORETICAL INVESTIGATION OF THERMALLY ACTIVATED AND ION BEAM INDUCED LATERAL SOLID-PHASE EPITAXY -- MATHEMATICAL MODELLING OF THE CAPACITANCE CHARACTERISTICS AND THE THRESHOLD VOLTAGE OF A MOS STRUCTURE ON A THIN SILICON SUBSTRATE -- INFLUENCE OF THERMAL GRADIENT ON THE RECRYSTALLIZATION OF THICK POLYCRYSTALLINE SILICON ON SIO2 -- ELECTRICAL CHARACTERIZATION OP THICK SOI-FILMS -- A MODEL FOR NITROGEN REDISTRIBUTION PROCESSES IN HIGH DOSE NITROGEN-IMPLANTED SILICON -- PHYSICAL MODEL, PROPERTIES AND OPTOELECTRONICAL APPLICATION OF HYDROGEN IMPLANTED SOI MOSFET'S -- PULSE LASER INDUCED IGNITION OF EXPLOSIVE LIQUID-PHASE CRYSTALLIZATION OF AMORPHOUS SILICON -- COMPUTER SIMULATION OF GRAIN BOUNDARY CONFINEMENT AT ZONE MELTING RECRYSTALLIZATION -- STUDY OF STRUCTURE FORMATION BY THE MELT INSTABILITY OF SILICON AT LIGHT HEATING -- High Throughput CO2 laser Recrystallization for 3D integrated Devices -- FORMATION OP BURIED NITRIDE LAYERS BELOW NiSi2 BY ION IMPLANTATION -- 10. Diagnostics and ion microfocus beam -- EMISSION CHARACTERISTICS OF EUTECTIC ALLOY LIQUID METAL ION SOURCES FOR FOCUSED ION BEAM SYSTEMS -- CHARACTERISTICS OF AN ExB MASS SEPARATOR FOR FOCUSED ION BEAM SYSTEMS -- CHANNELING EFFECTS AT LOW-ENERGY ION IMPLANTATION -- POSSIBILITIES OF THE TDPAC METHOD FOR THE DIAGNOSIS OF RADIATION DAMAGE AND ANNEALING PROCESS IN IMPLANTED SEMICONDUCTORS -- QUADRUPOLE-SIMS-MEASUREMENTS OP IMPURITIES IN SiO2/Si-STRUCTURES -- HIGH TEMPERATURE ION SOURCE FOR IMPLANTATION PURPOSES -- A HEW CONSTRUCTION OF ION IMPLANTER AT THE SLOVAK TECHNICAL UNIVERSITY -- THERMAL PROCESSES UNDER INTERACTION OP FOCUSED ION BEAMS WITH SEMICONDUCTOR CRYSTALS -- MASS AND ENERGY DISTRIBUTION MEASUREMENTS OF AuSi-LIQUID-METAL-ION SOURCE -- CLUSTER IONS IN LASER MASS SPECTRA OF WO3/C TARGETS -- ANALYSIS OF Ar ION BEAM ETCHING (IBE) INDUCED SURFACE DAMAGE OF GaAs BY MEANS OF 4+CU ADSORPTION / AUTORADIOGRAPHY AND RBS / CHANNELING -- A MaV ION PROBE AT TU PRAGUE -- 11. Fundamentals -- COMPUTER STUDIES OF THE STATISTICAL DISTRIBUTION FUNCTIONS OF PARTICLES MOVING IN COLLISION CASCADES -- MONTE CARLO CALCULATIONS OF HIGH DOSE ION BOMBARDMENT ACCOUNTING FOR DYNAMIC TARGET MODIFICATION -- ENERGY LOSS OF CHANNELED HELIUM IONS BY MONTE CARLO SIMULATION -- TRANSMISSION SPUTTERING OF THIN GOLD FILMS: A COMPUTER SIMULATION STUDY -- MODELLING OP NONEQUILIBRIUM PHASE TRANSITIONS INITIATED BY SHORT LASER PULSES IN SILICON -- INTERMEDIATE CRYSTALLIZATION OP AMORPHOUS SILICON LAYERS AT NANOSECOND FUISED LASER ANNEALING -- INVESTIGATIONS OB THE AMORPHOUS/CRYSTALLINE PHASE TRANSITION IN IONIMPLANTED SILICON BY MEANS OP CROSS-SECTIONAL TEM IMAGING -- NUMERICAL MODELLING OF SILICON SAMPLE MELTING BY HIGH-INTENSITY ION-BEAM PULSE -- SIMULATION OP NANOSECOND LASER ANNEALING OP SILICON ALLOWING FOR CRYSTALLIZATION OP SUPERCOOLED MELT -- PHASE TRANSITIONS INDUCED BY NANOSECOND LASER HEATING OP AMORPHIZED SILICON -- THEORETICAL TREATMENT OF THE IGNITION OF EXPLOSIVE LIQUID PHASE CRYSTALLIZATION PROCESSES -- MODELLING OF THE FACETED GROWTH DURING LATERAL EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS SILICON -- LASER PULSE-INDUCED PHASE TRANSFORMATIONS VISUALIZED BY NANOSECOND-EXPOSURE ELECTRON MICROSCOPY -- THERMAL PULSED ANNEALINS WITH ACCOUNT OF PLASMA EFFECT -- AMORPHOUS SILICON MELTING TEMPERATURE VERSUS SELF-SUSTAINING CRYSTALLIZATION KINETICS -- 12. Miscellaneous -- LONGITUDINAL-SPREAD CHARACTERISTICS OF RADIATION DEFECTS IN TELLURIUM-IMPLANTED GERMANIUM -- ANODIC OXIDATION OF Si AS A LOW TEMPERATURE OXIDATION METHOD FOR PASSIVATION OF SEMICONDUCTOR DEVICES -- SELF-ORGANIZATION PHENOMENA DURING CHARGE TRANSPORT IN BORON DOPED POLYORYSTALLINE SILICON -- LUMINESCENCE OP CUBIC BORON NITRIDE IMPLANTED WITH HIGH ENERGY IONS -- LUMINESCENCE OP DIAMOND IMPLANTED WITH HIGH ENERGY CARBON IONS -- MODIFICATION OF SOLIDS DUE TO THE EXPOSURE TO HIGH TEMPERATURE PLASMAS -- STRUCTURE AND PROPERTIES OF NANOMETER-SIZED SOLIDS -- 13. Author Index -- Backmatter

restricted access online access with authorization star

http://purl.org/coar/access_right/c_16ec

Issued also in print.

Mode of access: Internet via World Wide Web.

In English.

Description based on online resource; title from PDF title page (publisher's Web site, viewed 19. Oct 2024)