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Physica status solidi / A. Volume 79, Number 1, Septemmber 16 / ed. by Görlich.

Contributor(s): Material type: TextTextSeries: Physica status solidi / A ; Volume 79, Number 1Publisher: Berlin ; Boston : De Gruyter, [2022]Copyright date: ©1983Edition: Reprint 2021Description: 1 online resource (472 p.)Content type:
Media type:
Carrier type:
ISBN:
  • 9783112493038
  • 9783112493045
Subject(s): Other classification:
  • online - DeGruyter
Online resources: Available additional physical forms:
  • Issued also in print.
Contents:
Frontmatter -- Contents -- Systematic List -- Review Article -- Photostimulated Diffusion in Semiconductors -- Original Papers -- The Effect of Annealing on the Defect Structure and Electrical Properties of Deformed Single Crystals of Ge -- Anisotropy and Exchange Effects in Heavy Rare-Earth-Cobalt Compounds of the RCo5 Type -- Atomic Configurations of Interstitials in Intermetallic Compound Nb3Sn -- Characterization of Deep Energy Levels in Mercuric Iodide -- Amorphous Silicon-Phosphorus Layers -- Anomalies in the Optical and Electrical Properties of Cr-Al Alloys -- Pressure and Temperature Dependence of the Mechanoluminescence of γ-Irradiated Alkali Halide Crystals -- Electrical Studies on (Mo/W)Se2 Single Crystals -- On the Coercive Field of the Nearly Non-Magnetostrictive Amorphous Ferromagnetic Alloy Co58Ni10Fe5Si11B16 -- High-Temperature Internal Friction Peaks of Pure Aluminium -- Atomic Structure and Magnetic Properties of the Pseudobinary Alloys Fe3(Al, Si) -- Micron-Scaled Spectral-Resolved Cathodoluminescence of Grains in Bariumtitanate Ceramics -- On the Size-Shape Relation of Gruinier-Preston Zones and α`R-Precipitates in an Al-6.8 at% Zn Alloy -- Energy Spectra of Backscattered Electrons for Solid Films and Double Layers by Use of Werner's Analytic Model -- Photoluminescence Decay in Amorphous Silicon Alloys -- Effect of Post-Irradiation Deformation on Thermoluminescence Spectra of KCl:Ca and NaCl: Ca Crystals -- Dependence of Photoluminescence on Temperature in Dislocated Silicon Crystals -- Temperature and Thickness Dependence of Electrical Conductivity of Flash-Evaporated InSb Films -- Influence of Substrate Deformations on Interface Structures -- Transient Behaviour of Intrinsic Gettering in CZ Silicon Wafers -- On the Flux Jumps in Hard Superconductors -- Magnetic and Mössbauer Studies of Some Mixed Cobaltites of the Lanthanides and Alkali Metals -- Trap-Assisted Tunneling in MIS and Schottky Structures -- Thermoluminescence of Thallium-Doped BaFCl -- Diffusion of Water in NaCl Bicrystals -- Analysis of Thermoluminescence Data Dominated by Second-Order Kinetics -- Structural Phase Transition of CsPbCl3 below Room Temperature -- Mechanism of Solid State Transformations in Single Crystals of ZnxCd1-x S -- Deformation of α-β Brass with Oriented and Equiaxed Duplex Boundaries -- The Silver Iodide-Thallium Iodide Pseudo-Binary System -- Heat Capacity of Diatomic Molecules Adsorbed on a Periodic Substrate and the Localized-to-Mobile Transition -- Determination of Pitch in Chiral Smectic C DOBAMBC -- A Mechanism for the Effect of Doping on the Silicon Native Oxide Thickness -- An Electrochemical Evidence of the O2 Photodesorption from n-TiO2 Surface -- Deviations from Matthiessen's Rule in the Nickel-Chromium System -- Strengthening of GaAs by Impurity Atom-Vacancy Complexes -- Short Note -- Figures -- Study of the 25 K NpO2 Phase Transition by a Neutron Oscillation Camera -- Annealing of Implanted Silicon under the Action of Microsecond Pulsed TEA-CO2 Laser Radiation -- On the Role of Surface Oxides in the Processes of Metal Etching -- Comparison of Fast Electron and Thermal Annealing of Proton Bombarded Silicon - X-Ray and IR Spectroscopy Study -- Dislocation Mobility in Hydrostatic ally Compressed KBr Crystals -- Electrical Properties of Junctions between Sputter Deposited Silicon Films and Monocrystalline Silicon -- Stress Effects on the Switching Voltage of Metal-SnO2-Si(n)-Si(p+) Devices -- Cation Mixing and the AC Conductivity of CdInGaS4 -- Electrical and Structural Characterisation of (DBzB P)(TCNQ)4 -- Pulse Radiation Annealing of Capless GaAs -- Influence of Growth Dislocations on Low Temperature Conductivity in Irradiated p-Germanium -- Low-Temperature Specific Heat of Vapour-Deposited Gex Se1-x Glass (x = 0.3) -- Effect of Illumination on Current-Voltage Characteristics of GdIn3Sg6 Single Crystals -- Simulation of Collision Cascades in Intermetallic V2Hf Compounds -- PGa Antisite Defect in Zn-Implanted GaA0.1P0.9 LED -- On the Hole Mobility of CuGaSe2 -- Determination of p-n Junctions in InP/GaInAsP Laser Heterostructures Using a Profilometer -- Determination of Nonlinear Elastic Coefficients by Resonant Methods -- Fractional Order of Kinetics and Its Variation with Trap Occupancy in LiF TLD-100 -- Reply to "Fractional Order of Kinetics and Its Variation with Trap Occupancy in LiF TLD-100" by S. P. Kathuria and C. M. Sunta -- Dependence of the Ambipolar Diffusion in Silicon on the Carrier Density -- The Effect of Low Oxygen Concentrations on the Photoluminescence of Vitreous Selenium -- Critical Composition of Antiferromagnetic Ordering in UNxC1-x -- The Hampered, Sideways Motion of a Single Domain Wall in Rochelle Salt Crystals -- Electrical Properties of Vapour Phase Grown (ZnSe)x (CdTe)1-xSingle Crystals -- Photovoltaic Behaviour of Rhodamine 6G Schottky-Type Cells -- Pre-Printed Titles
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eBook eBook Biblioteca "Angelicum" Pont. Univ. S.Tommaso d'Aquino Nuvola online online - DeGruyter (Browse shelf(Opens below)) Online access Not for loan (Accesso limitato) Accesso per gli utenti autorizzati / Access for authorized users (dgr)9783112493045

Frontmatter -- Contents -- Systematic List -- Review Article -- Photostimulated Diffusion in Semiconductors -- Original Papers -- The Effect of Annealing on the Defect Structure and Electrical Properties of Deformed Single Crystals of Ge -- Anisotropy and Exchange Effects in Heavy Rare-Earth-Cobalt Compounds of the RCo5 Type -- Atomic Configurations of Interstitials in Intermetallic Compound Nb3Sn -- Characterization of Deep Energy Levels in Mercuric Iodide -- Amorphous Silicon-Phosphorus Layers -- Anomalies in the Optical and Electrical Properties of Cr-Al Alloys -- Pressure and Temperature Dependence of the Mechanoluminescence of γ-Irradiated Alkali Halide Crystals -- Electrical Studies on (Mo/W)Se2 Single Crystals -- On the Coercive Field of the Nearly Non-Magnetostrictive Amorphous Ferromagnetic Alloy Co58Ni10Fe5Si11B16 -- High-Temperature Internal Friction Peaks of Pure Aluminium -- Atomic Structure and Magnetic Properties of the Pseudobinary Alloys Fe3(Al, Si) -- Micron-Scaled Spectral-Resolved Cathodoluminescence of Grains in Bariumtitanate Ceramics -- On the Size-Shape Relation of Gruinier-Preston Zones and α`R-Precipitates in an Al-6.8 at% Zn Alloy -- Energy Spectra of Backscattered Electrons for Solid Films and Double Layers by Use of Werner's Analytic Model -- Photoluminescence Decay in Amorphous Silicon Alloys -- Effect of Post-Irradiation Deformation on Thermoluminescence Spectra of KCl:Ca and NaCl: Ca Crystals -- Dependence of Photoluminescence on Temperature in Dislocated Silicon Crystals -- Temperature and Thickness Dependence of Electrical Conductivity of Flash-Evaporated InSb Films -- Influence of Substrate Deformations on Interface Structures -- Transient Behaviour of Intrinsic Gettering in CZ Silicon Wafers -- On the Flux Jumps in Hard Superconductors -- Magnetic and Mössbauer Studies of Some Mixed Cobaltites of the Lanthanides and Alkali Metals -- Trap-Assisted Tunneling in MIS and Schottky Structures -- Thermoluminescence of Thallium-Doped BaFCl -- Diffusion of Water in NaCl Bicrystals -- Analysis of Thermoluminescence Data Dominated by Second-Order Kinetics -- Structural Phase Transition of CsPbCl3 below Room Temperature -- Mechanism of Solid State Transformations in Single Crystals of ZnxCd1-x S -- Deformation of α-β Brass with Oriented and Equiaxed Duplex Boundaries -- The Silver Iodide-Thallium Iodide Pseudo-Binary System -- Heat Capacity of Diatomic Molecules Adsorbed on a Periodic Substrate and the Localized-to-Mobile Transition -- Determination of Pitch in Chiral Smectic C DOBAMBC -- A Mechanism for the Effect of Doping on the Silicon Native Oxide Thickness -- An Electrochemical Evidence of the O2 Photodesorption from n-TiO2 Surface -- Deviations from Matthiessen's Rule in the Nickel-Chromium System -- Strengthening of GaAs by Impurity Atom-Vacancy Complexes -- Short Note -- Figures -- Study of the 25 K NpO2 Phase Transition by a Neutron Oscillation Camera -- Annealing of Implanted Silicon under the Action of Microsecond Pulsed TEA-CO2 Laser Radiation -- On the Role of Surface Oxides in the Processes of Metal Etching -- Comparison of Fast Electron and Thermal Annealing of Proton Bombarded Silicon - X-Ray and IR Spectroscopy Study -- Dislocation Mobility in Hydrostatic ally Compressed KBr Crystals -- Electrical Properties of Junctions between Sputter Deposited Silicon Films and Monocrystalline Silicon -- Stress Effects on the Switching Voltage of Metal-SnO2-Si(n)-Si(p+) Devices -- Cation Mixing and the AC Conductivity of CdInGaS4 -- Electrical and Structural Characterisation of (DBzB P)(TCNQ)4 -- Pulse Radiation Annealing of Capless GaAs -- Influence of Growth Dislocations on Low Temperature Conductivity in Irradiated p-Germanium -- Low-Temperature Specific Heat of Vapour-Deposited Gex Se1-x Glass (x = 0.3) -- Effect of Illumination on Current-Voltage Characteristics of GdIn3Sg6 Single Crystals -- Simulation of Collision Cascades in Intermetallic V2Hf Compounds -- PGa Antisite Defect in Zn-Implanted GaA0.1P0.9 LED -- On the Hole Mobility of CuGaSe2 -- Determination of p-n Junctions in InP/GaInAsP Laser Heterostructures Using a Profilometer -- Determination of Nonlinear Elastic Coefficients by Resonant Methods -- Fractional Order of Kinetics and Its Variation with Trap Occupancy in LiF TLD-100 -- Reply to "Fractional Order of Kinetics and Its Variation with Trap Occupancy in LiF TLD-100" by S. P. Kathuria and C. M. Sunta -- Dependence of the Ambipolar Diffusion in Silicon on the Carrier Density -- The Effect of Low Oxygen Concentrations on the Photoluminescence of Vitreous Selenium -- Critical Composition of Antiferromagnetic Ordering in UNxC1-x -- The Hampered, Sideways Motion of a Single Domain Wall in Rochelle Salt Crystals -- Electrical Properties of Vapour Phase Grown (ZnSe)x (CdTe)1-xSingle Crystals -- Photovoltaic Behaviour of Rhodamine 6G Schottky-Type Cells -- Pre-Printed Titles

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Issued also in print.

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Description based on online resource; title from PDF title page (publisher's Web site, viewed 01. Dez 2022)