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Physica status solidi / A. Volume 69, Number 1, January 16 / ed. by Görlich.

Contributor(s): Material type: TextTextSeries: Physica status solidi / A ; Volume 69, Number 1Publisher: Berlin ; Boston : De Gruyter, [2022]Copyright date: ©1982Edition: Reprint 2021Description: 1 online resource (584 p.)Content type:
Media type:
Carrier type:
ISBN:
  • 9783112494394
  • 9783112494400
Subject(s): Other classification:
  • online - DeGruyter
Online resources: Available additional physical forms:
  • Issued also in print.
Contents:
Frontmatter -- Contents -- Review Article -- Physical Concepts of High-Field, Thin-Film Electroluminescence Devices -- Original Papers -- The Effect of Illumination on Anomalous Ultrasonic Attenuation in Doped Single Crystals of Bi12GeO20 -- Interaction of 1.2 MeV Electron Irradiation Produced Defects with Cu Impurity Atoms in CdS Single Crystals -- Dislocation Behaviour and Multiplication under Ultrasound -- Electron Microscope Investigation of Crystals Based on Bend-Contour Arrangement -- The Behaviour of Resistance and Thermopower and the Coexistence of Two Phases at Metal-Insulator Transitions -- High Resolution Electron Microscopic and Electron Diffraction Study of the Au-Mg System -- Lattice Thermal Conductivity of Noncrystalline Material at Low Temperatures -- Peculiarities of High-Amplitude Dislocation Internal Friction in Molybdenum Single Crystals of High Purity in the Temperature Range 5.9 to 300 K -- Optical and Compositional Properties of Amorphous SixCyFx Films Prepared by Reactive Sputtering -- Investigation of Interfacial Reactions in Bimetallic Thin-Film Couples of AI/Cu and Pb/Cu by Measurement of Contact Resistance -- Optical Excitations of Dislocation States in Silicon -- The Effects of Field and Temperature Heating in Intrinsic Semiconductors with Non-Injecting Contacts -- Superconducting and Normal Properties of Solid Solutions Nb 1-xTaxCy -- The Luminescence and EPR Spectra of Manganese Activated A1N -- A Phenomenological Theory for Hysteresis in the Ionic Conductivity of Solid Electrolytes -- Thermochemical Model Applied to a Deep-Level Defect in GaP -- Optical Absorption Measurements on Carbon Foils -- Avalanche Multiplication in GaP Studied by Means of the SEM -- Optical Properties of RF-Sputtered Indium Oxide Films -- A Thermodynamic Model for the Formation and Growth of B-Defects in Silicon -- Investigation of the Magnetic Aftereffect in Dilute Fe-Ni Alloys after Low-Temperature Neutron Irradiation -- Order-Disorder Transition of NH4AlF4 through EPR Investigations -- The Calculation of the Effect of Point Defect Trapping on Void Growth -- The Fracture Properties of NbC, Nb(C, N), and NbN by Hertzian Indentation -- Analysis of Ghost Peak Formation in the Emission Spectra of GaAs p-n Junctions -- Magnetoresistance and Conductivity in the Binary System Titanium-Oxygen -- EXAFS Study on the Local Structure of Copper Crystals Deformed by Heavy Cold Working -- Electrical Properties of Glow Discharge a-Si:H Thin Films Prepared with a RF Plasma Etch Unit -- Contrast of the Dislocations for g • b = 0 , 1 , 2 -- Electrical Conductivity and Cation Valencies in Nickel Manganite -- Compression Tests of Heat-Treated Czochralski-Grown Silicon Crystals -- A SAXS Study of Coarsening Mechanism of GP Zones in the Al-Li-Mg System -- Monte-Carlo Studies of the Electron Mobility in SiO2 -- Non-Stoichiometry and Electrical Conductivity of Strontium Niobates with Perovskite Structure -- Thermoluminescence of NaF Harshaw Single Crystals Irradiated to Medium Doses -- Dielectric Relaxation Study of CuTlSe2 in the Solid and Liquid Phases -- Low-Temperature Specific Heats of Non-Stoichiometric Neodymium Hydrides -- Electron Microscopic Study of the Ordered and Disordered Phases in Ga2Se3 -- Elastic Constants of Sodium Nitrate from 77 to 300 K -- SIS Solar Cell Theory and Calculations -- A Difference between Tension and Compression in the Density Change of Strained LiF Crystals -- Vacuum Ultraviolet Reflection Spectra of Pb-Containing ABO3 Perovskites -- Short Notes -- X-Ray Topographic Study of the Phase Transition in GdDy (MoO4)3 Crystals -- MOCVD of A1N on Silicon -- The Bulk Amorphous Alloy Tb4Co3 - An Example for a System with a Transition to a "Spin-Glass-Like" State -- Polymorphism in AgI and Ag1-x CuxI -- Distribution of Metal Ions in Transition Metal Manganites AMn2O4 (A: Co, Ni, Cu, or Zn) -- Laser Absorption Measurement of OH Ion Distribution Profiles in Silica Glasses -- Submicron High Critical Current Density Niobium-Lead Josephson Junctions -- Criticism of the Z-Center Model in LiF-TLD -- Special Features of Negative Photoconductivity in TlGaSe2 -- Photoconductivity Spectrum of p-Type CuInS2 Single Crystals -- Effect of Electron Irradiation on Recombination Characteristics of Deep Radiative Centres in GaAs -- Magnetic Properties of the CoxNi1-x MnGe System in the Hexagonal Phase -- Channelling and Ionoluminescence Spectra of Cubic-Structured ZnS Crystals -- The Solid Solubility of Ga and In in Ge1-x-Six -- Are Au Profiles Well Measurable in n-GaAs by Electroetching ? -- Notes on Quantitative AES of the Fe-O System -- Uranium Doped Barium Titanate Ceramics -- Simple Equation Describing I-U Characteristics of MIS Solar Cells -- On the Photoluminescence of Ba2NaNb5O15 -- Light Induced Transient Grating Decay in Si and Some AII BVI Compounds -- ESCA Spectra and Electronic Properties of Some Ruthenium Compounds -- Magnetic Relaxation Spectra of Some Dilute Binary Iron-Based Alloys after Low-Temperature Electron Irradiation -- Dielectric Constant and Pyroelectricity of Some Cu2+ Complexes -- Solubility of Ag in CdS Single Crystals -- Investigation of Current Characteristics of Thin-Film Structures Based on GaP under the Action of an Electron Beam -- Substitutional Doping of Vacuum-Evaporated Amorphous Silicon by Ion Implantation -- Photovoltage Spectroscopy of Fast Surface States in Silicon MPS Structures -- Temperature Dependence of Magnetocrystalline Anisotropy Constant of BaCo2Ti2Fe8O19 Single Crystals -- Semiconduction in Ammonium Phosphomolybdate -- Electron Beam Induced Leakage Currents in Silicon Nitride Thin Films -- Author Index
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Item type Current library Call number URL Status Notes Barcode
eBook eBook Biblioteca "Angelicum" Pont. Univ. S.Tommaso d'Aquino Nuvola online online - DeGruyter (Browse shelf(Opens below)) Online access Not for loan (Accesso limitato) Accesso per gli utenti autorizzati / Access for authorized users (dgr)9783112494400

Frontmatter -- Contents -- Review Article -- Physical Concepts of High-Field, Thin-Film Electroluminescence Devices -- Original Papers -- The Effect of Illumination on Anomalous Ultrasonic Attenuation in Doped Single Crystals of Bi12GeO20 -- Interaction of 1.2 MeV Electron Irradiation Produced Defects with Cu Impurity Atoms in CdS Single Crystals -- Dislocation Behaviour and Multiplication under Ultrasound -- Electron Microscope Investigation of Crystals Based on Bend-Contour Arrangement -- The Behaviour of Resistance and Thermopower and the Coexistence of Two Phases at Metal-Insulator Transitions -- High Resolution Electron Microscopic and Electron Diffraction Study of the Au-Mg System -- Lattice Thermal Conductivity of Noncrystalline Material at Low Temperatures -- Peculiarities of High-Amplitude Dislocation Internal Friction in Molybdenum Single Crystals of High Purity in the Temperature Range 5.9 to 300 K -- Optical and Compositional Properties of Amorphous SixCyFx Films Prepared by Reactive Sputtering -- Investigation of Interfacial Reactions in Bimetallic Thin-Film Couples of AI/Cu and Pb/Cu by Measurement of Contact Resistance -- Optical Excitations of Dislocation States in Silicon -- The Effects of Field and Temperature Heating in Intrinsic Semiconductors with Non-Injecting Contacts -- Superconducting and Normal Properties of Solid Solutions Nb 1-xTaxCy -- The Luminescence and EPR Spectra of Manganese Activated A1N -- A Phenomenological Theory for Hysteresis in the Ionic Conductivity of Solid Electrolytes -- Thermochemical Model Applied to a Deep-Level Defect in GaP -- Optical Absorption Measurements on Carbon Foils -- Avalanche Multiplication in GaP Studied by Means of the SEM -- Optical Properties of RF-Sputtered Indium Oxide Films -- A Thermodynamic Model for the Formation and Growth of B-Defects in Silicon -- Investigation of the Magnetic Aftereffect in Dilute Fe-Ni Alloys after Low-Temperature Neutron Irradiation -- Order-Disorder Transition of NH4AlF4 through EPR Investigations -- The Calculation of the Effect of Point Defect Trapping on Void Growth -- The Fracture Properties of NbC, Nb(C, N), and NbN by Hertzian Indentation -- Analysis of Ghost Peak Formation in the Emission Spectra of GaAs p-n Junctions -- Magnetoresistance and Conductivity in the Binary System Titanium-Oxygen -- EXAFS Study on the Local Structure of Copper Crystals Deformed by Heavy Cold Working -- Electrical Properties of Glow Discharge a-Si:H Thin Films Prepared with a RF Plasma Etch Unit -- Contrast of the Dislocations for g • b = 0 , 1 , 2 -- Electrical Conductivity and Cation Valencies in Nickel Manganite -- Compression Tests of Heat-Treated Czochralski-Grown Silicon Crystals -- A SAXS Study of Coarsening Mechanism of GP Zones in the Al-Li-Mg System -- Monte-Carlo Studies of the Electron Mobility in SiO2 -- Non-Stoichiometry and Electrical Conductivity of Strontium Niobates with Perovskite Structure -- Thermoluminescence of NaF Harshaw Single Crystals Irradiated to Medium Doses -- Dielectric Relaxation Study of CuTlSe2 in the Solid and Liquid Phases -- Low-Temperature Specific Heats of Non-Stoichiometric Neodymium Hydrides -- Electron Microscopic Study of the Ordered and Disordered Phases in Ga2Se3 -- Elastic Constants of Sodium Nitrate from 77 to 300 K -- SIS Solar Cell Theory and Calculations -- A Difference between Tension and Compression in the Density Change of Strained LiF Crystals -- Vacuum Ultraviolet Reflection Spectra of Pb-Containing ABO3 Perovskites -- Short Notes -- X-Ray Topographic Study of the Phase Transition in GdDy (MoO4)3 Crystals -- MOCVD of A1N on Silicon -- The Bulk Amorphous Alloy Tb4Co3 - An Example for a System with a Transition to a "Spin-Glass-Like" State -- Polymorphism in AgI and Ag1-x CuxI -- Distribution of Metal Ions in Transition Metal Manganites AMn2O4 (A: Co, Ni, Cu, or Zn) -- Laser Absorption Measurement of OH Ion Distribution Profiles in Silica Glasses -- Submicron High Critical Current Density Niobium-Lead Josephson Junctions -- Criticism of the Z-Center Model in LiF-TLD -- Special Features of Negative Photoconductivity in TlGaSe2 -- Photoconductivity Spectrum of p-Type CuInS2 Single Crystals -- Effect of Electron Irradiation on Recombination Characteristics of Deep Radiative Centres in GaAs -- Magnetic Properties of the CoxNi1-x MnGe System in the Hexagonal Phase -- Channelling and Ionoluminescence Spectra of Cubic-Structured ZnS Crystals -- The Solid Solubility of Ga and In in Ge1-x-Six -- Are Au Profiles Well Measurable in n-GaAs by Electroetching ? -- Notes on Quantitative AES of the Fe-O System -- Uranium Doped Barium Titanate Ceramics -- Simple Equation Describing I-U Characteristics of MIS Solar Cells -- On the Photoluminescence of Ba2NaNb5O15 -- Light Induced Transient Grating Decay in Si and Some AII BVI Compounds -- ESCA Spectra and Electronic Properties of Some Ruthenium Compounds -- Magnetic Relaxation Spectra of Some Dilute Binary Iron-Based Alloys after Low-Temperature Electron Irradiation -- Dielectric Constant and Pyroelectricity of Some Cu2+ Complexes -- Solubility of Ag in CdS Single Crystals -- Investigation of Current Characteristics of Thin-Film Structures Based on GaP under the Action of an Electron Beam -- Substitutional Doping of Vacuum-Evaporated Amorphous Silicon by Ion Implantation -- Photovoltage Spectroscopy of Fast Surface States in Silicon MPS Structures -- Temperature Dependence of Magnetocrystalline Anisotropy Constant of BaCo2Ti2Fe8O19 Single Crystals -- Semiconduction in Ammonium Phosphomolybdate -- Electron Beam Induced Leakage Currents in Silicon Nitride Thin Films -- Author Index

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In English.

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