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Physica status solidi / A. Volume 77, Number 2, June 16 / ed. by Görlich.

Contributor(s): Material type: TextTextSeries: Physica status solidi / A ; Volume 77, Number 2Publisher: Berlin ; Boston : De Gruyter, [2022]Copyright date: ©1983Edition: Reprint 2021Description: 1 online resource (512 p.)Content type:
Media type:
Carrier type:
ISBN:
  • 9783112494530
  • 9783112494547
Subject(s): Other classification:
  • online - DeGruyter
Online resources: Available additional physical forms:
  • Issued also in print.
Contents:
Frontmatter -- Contents -- Original Papers -- The Effect of Spatial Variation of a High-Frequency Field on the Instability Occurrence in Inhomogeneous Semiconductors -- Double Injection Current and Field Effect in SOS Diodes -- Conduction Mechanism of Some "Quasi-Amorphous" Semiconductors on the Basis of Boron -- Influence of the Ground State Symmetry on the Qualitative Form of Ordering Phase Diagram -- Correlations of the 119Sn Mossbauer Isomer Shift with Interatomic Distances for Complex Tetrahedral Semiconductors -- Minority Carrier Lifetime in Polycrystalline Semiconductors -- Temperature Dependence of Electroluminescence in CdF2 Thin Films Doped with Rare Earth -- Analysis of the 215 °C Glow Peak in Li-Doped KCl Single Crystals -- Resonance and Relaxation of Domain Walls in Polycrystalline Ferrites -- Optical Dispersion in Zinc Oxide -- Structural and Galvanomagnetic Properties of Pb1-x MnxTe Single Crystals Grown by the Bridgman-Stockbarger Method -- On the Role of Intrasublattice Interactions in YIG with Diamagnetically Substituted a-Sublattice -- On the Analytical Methods of Line Defect and Beam Direction Determinations -- The Influence of Texture on the X-Ray Determination of Residual Strains in Ground or Worn Surfaces -- Degradation of Yellow Light-Emitting GaAs0.1P0.9: N Diodes -- Electron Traps and Deep Levels in Cadmium Selenide -- Investigations of Mechanically Induced Excited States on Cleavage Planes of Ionic Crystals -- Dose Dependence of the Flash Lamp Annealing oi Arsenic-Implanted Silicon -- Sublattice Models of the Binary Crystal Growth -- Oxygen-Related Donors Formed at 600 °C in Silicon in Dependence on Oxygen and Carbon Content -- Size Effect on the Magnetoresistance of p-InSb -- Comparison of the Structure and the Electric Properties of ZnIn2S4(III)- and CdInGaS4-Layered Crystals -- Influence of Covalent Bonding on the Photoelectrochemical Properties of Some Perovskite-Type Related Compounds -- Cation Ordering in LiFe5O8 Studied by Mössbauer Spectroscopy and X-Ray Crystallography -- Relationships among Trapped Hole and Trapped Electron Centers in Oxidized Soda-Silica Glasses of High Purity -- Thermoluminescence of X-Irradiated CaO and CaO:Li Single Crystals -- Dislocation Breakaway at Low Temperatures in Nb -- Thermoluminescence and Optical Absorption Studies of Z1-Centres in NaCl Crystals Doped with Terbium -- The Effect of Annealing Temperature on the Electron Concentration of Hg0.3Cd0.7Te -- On the Elastic Constants and Structure of the Pure Inorganic Oxide Glasses -- Hole Effective Mass and Impurity Levels in Undoped AgTlTe -- Damage of V2O5 Single Crystals by Powerful Pulsed CO2 Laser Irradiation -- The Effect of Deposition Parameters on the Electrical Properties of Thin Ytterbium Films -- A Study of Absorption Currents in Polycarbonate :Polypropylene Blend -- The Influence of Defect Surface Layers on the Capacitive Properties of MOS Structures -- Photoconductivity in n-Type InP:Fe -- Schottky Barrier Characteristics at Low Temperatures -- RF Annealing of Defects Induced in SiO2 by Oxygen Plasma -- The Influence of Defects on Low-Temperature Resistivity of Intermetallic Compounds with A-15 Structure -- A Reexamination of Diffraction Data on Zinc to Determine Anharmonic Components in the One-Particle-Potential Model -- Electrical and Optical Characteristics of GaAs0.6 P0.4 LEDs Fabricated by Zn Semi-Closed Diffusion Method -- DC Conductivity and Electric Relaxation Currents in a Polyester Polymer -- Superconductivity and Decay Phenomena of Nb3Al-Nb3Ge Solid Solutions -- Streamer Discharges in Semiconductors -- Recovery of Structural Defects in Molybdenum -- Electrical Resistivity and Hall Effect in Thin Amorphous UFe Films -- Preferential Precipitation on Extended Edge Dislocations in NaCl Crystals -- Ultraviolet Absorption of T1+ Ion in K2O-KBr-B2O3 and Na2O-NaBr-B2O3 Glasses -- On the Influence of the Non-Homogeneous Structure on the Current-Voltage Behaviour of Chalcogenide Vitreous Semiconductors -- Erratum -- Short Notes -- Figures -- Pulse Technique for Flat-Band Voltage Measurements in MIS Structures -- Domain Wall Motions Due to External Stresses in a Mn-Zn Ferrite Single Crystal -- Scanning-DLTS Investigation of the EL 2 Level in Plastically Deformed GaAs -- Diffusion-Limited Carrier Lifetime in GaP:N LED -- Crystal Growth and Neutral-Acceptor Bound-Exciton Emission of ZnCdTe by THM with Te Solvent -- Synthesis and Magnetic Properties of RCuSi (R = Y, Ce, Nd, Sm, Gd, Ho) -- The Influence of Stress on the Fine Structure of Schottky Diode I-U Characteristics in the Breakdown Region -- Radiation Effects on the Metal-GaP Interface -- Measurement of the Electrothermal Nonlinearity and Thermal Relaxation Times of Thin Metal Films -- Detection of Surface Imperfections at Polished Silicon Wafers by TCD Measurements -- EPR of Mn2+ in [Mg(H2O6)] SnCl6 Single Crystals -- Determination of Residual Resistivity and Observation of Resistance Recovery from Current-Voltage Curves of Short Epitaxial Gold Thin Films -- On the Role of Exact Boundary Conditions in Phototransport Phenomena; Case of SI-GaAs -- Dielectric Properties of Sm or Gd Doped CaF2 Single Crystals -- Crystallization in a Fluorozirconate Glass: Determination of the 19F Chemical Shift in β-BaZrF6 -- Ion Beam Induced Mixing in Bubble Garnet Films -- Stimulated Emission of Pr3+ Ions in YAlO3 Crystals -- On the Mechanism of Electron Impact Excited Luminescence Devices -- Effect of Some Additives on Nickel-Zinc Ferrite Losses -- Very Short Diffusions of Silver in the III-V Semiconductors -- Pressure-Induced Phase Transitions of HgTe -- The Nature of Stage I-II Structural Phase Transition in the Layer Compound RbVF4 -- Interdiffusion Profiles of AuGe/n-GaAs Ohmic Contacts Studied by AES -- Pre-Printed Titles
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eBook eBook Biblioteca "Angelicum" Pont. Univ. S.Tommaso d'Aquino Nuvola online online - DeGruyter (Browse shelf(Opens below)) Online access Not for loan (Accesso limitato) Accesso per gli utenti autorizzati / Access for authorized users (dgr)9783112494547

Frontmatter -- Contents -- Original Papers -- The Effect of Spatial Variation of a High-Frequency Field on the Instability Occurrence in Inhomogeneous Semiconductors -- Double Injection Current and Field Effect in SOS Diodes -- Conduction Mechanism of Some "Quasi-Amorphous" Semiconductors on the Basis of Boron -- Influence of the Ground State Symmetry on the Qualitative Form of Ordering Phase Diagram -- Correlations of the 119Sn Mossbauer Isomer Shift with Interatomic Distances for Complex Tetrahedral Semiconductors -- Minority Carrier Lifetime in Polycrystalline Semiconductors -- Temperature Dependence of Electroluminescence in CdF2 Thin Films Doped with Rare Earth -- Analysis of the 215 °C Glow Peak in Li-Doped KCl Single Crystals -- Resonance and Relaxation of Domain Walls in Polycrystalline Ferrites -- Optical Dispersion in Zinc Oxide -- Structural and Galvanomagnetic Properties of Pb1-x MnxTe Single Crystals Grown by the Bridgman-Stockbarger Method -- On the Role of Intrasublattice Interactions in YIG with Diamagnetically Substituted a-Sublattice -- On the Analytical Methods of Line Defect and Beam Direction Determinations -- The Influence of Texture on the X-Ray Determination of Residual Strains in Ground or Worn Surfaces -- Degradation of Yellow Light-Emitting GaAs0.1P0.9: N Diodes -- Electron Traps and Deep Levels in Cadmium Selenide -- Investigations of Mechanically Induced Excited States on Cleavage Planes of Ionic Crystals -- Dose Dependence of the Flash Lamp Annealing oi Arsenic-Implanted Silicon -- Sublattice Models of the Binary Crystal Growth -- Oxygen-Related Donors Formed at 600 °C in Silicon in Dependence on Oxygen and Carbon Content -- Size Effect on the Magnetoresistance of p-InSb -- Comparison of the Structure and the Electric Properties of ZnIn2S4(III)- and CdInGaS4-Layered Crystals -- Influence of Covalent Bonding on the Photoelectrochemical Properties of Some Perovskite-Type Related Compounds -- Cation Ordering in LiFe5O8 Studied by Mössbauer Spectroscopy and X-Ray Crystallography -- Relationships among Trapped Hole and Trapped Electron Centers in Oxidized Soda-Silica Glasses of High Purity -- Thermoluminescence of X-Irradiated CaO and CaO:Li Single Crystals -- Dislocation Breakaway at Low Temperatures in Nb -- Thermoluminescence and Optical Absorption Studies of Z1-Centres in NaCl Crystals Doped with Terbium -- The Effect of Annealing Temperature on the Electron Concentration of Hg0.3Cd0.7Te -- On the Elastic Constants and Structure of the Pure Inorganic Oxide Glasses -- Hole Effective Mass and Impurity Levels in Undoped AgTlTe -- Damage of V2O5 Single Crystals by Powerful Pulsed CO2 Laser Irradiation -- The Effect of Deposition Parameters on the Electrical Properties of Thin Ytterbium Films -- A Study of Absorption Currents in Polycarbonate :Polypropylene Blend -- The Influence of Defect Surface Layers on the Capacitive Properties of MOS Structures -- Photoconductivity in n-Type InP:Fe -- Schottky Barrier Characteristics at Low Temperatures -- RF Annealing of Defects Induced in SiO2 by Oxygen Plasma -- The Influence of Defects on Low-Temperature Resistivity of Intermetallic Compounds with A-15 Structure -- A Reexamination of Diffraction Data on Zinc to Determine Anharmonic Components in the One-Particle-Potential Model -- Electrical and Optical Characteristics of GaAs0.6 P0.4 LEDs Fabricated by Zn Semi-Closed Diffusion Method -- DC Conductivity and Electric Relaxation Currents in a Polyester Polymer -- Superconductivity and Decay Phenomena of Nb3Al-Nb3Ge Solid Solutions -- Streamer Discharges in Semiconductors -- Recovery of Structural Defects in Molybdenum -- Electrical Resistivity and Hall Effect in Thin Amorphous UFe Films -- Preferential Precipitation on Extended Edge Dislocations in NaCl Crystals -- Ultraviolet Absorption of T1+ Ion in K2O-KBr-B2O3 and Na2O-NaBr-B2O3 Glasses -- On the Influence of the Non-Homogeneous Structure on the Current-Voltage Behaviour of Chalcogenide Vitreous Semiconductors -- Erratum -- Short Notes -- Figures -- Pulse Technique for Flat-Band Voltage Measurements in MIS Structures -- Domain Wall Motions Due to External Stresses in a Mn-Zn Ferrite Single Crystal -- Scanning-DLTS Investigation of the EL 2 Level in Plastically Deformed GaAs -- Diffusion-Limited Carrier Lifetime in GaP:N LED -- Crystal Growth and Neutral-Acceptor Bound-Exciton Emission of ZnCdTe by THM with Te Solvent -- Synthesis and Magnetic Properties of RCuSi (R = Y, Ce, Nd, Sm, Gd, Ho) -- The Influence of Stress on the Fine Structure of Schottky Diode I-U Characteristics in the Breakdown Region -- Radiation Effects on the Metal-GaP Interface -- Measurement of the Electrothermal Nonlinearity and Thermal Relaxation Times of Thin Metal Films -- Detection of Surface Imperfections at Polished Silicon Wafers by TCD Measurements -- EPR of Mn2+ in [Mg(H2O6)] SnCl6 Single Crystals -- Determination of Residual Resistivity and Observation of Resistance Recovery from Current-Voltage Curves of Short Epitaxial Gold Thin Films -- On the Role of Exact Boundary Conditions in Phototransport Phenomena; Case of SI-GaAs -- Dielectric Properties of Sm or Gd Doped CaF2 Single Crystals -- Crystallization in a Fluorozirconate Glass: Determination of the 19F Chemical Shift in β-BaZrF6 -- Ion Beam Induced Mixing in Bubble Garnet Films -- Stimulated Emission of Pr3+ Ions in YAlO3 Crystals -- On the Mechanism of Electron Impact Excited Luminescence Devices -- Effect of Some Additives on Nickel-Zinc Ferrite Losses -- Very Short Diffusions of Silver in the III-V Semiconductors -- Pressure-Induced Phase Transitions of HgTe -- The Nature of Stage I-II Structural Phase Transition in the Layer Compound RbVF4 -- Interdiffusion Profiles of AuGe/n-GaAs Ohmic Contacts Studied by AES -- Pre-Printed Titles

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