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Physica status solidi / A. Volume 75, Number 1, January 16 / ed. by Görlich.

Contributor(s): Material type: TextTextSeries: Physica status solidi / A ; Volume 75, Number 1Publisher: Berlin ; Boston : De Gruyter, [2022]Copyright date: ©1983Edition: Reprint 2021Description: 1 online resource (480 p.)Content type:
Media type:
Carrier type:
ISBN:
  • 9783112495032
  • 9783112495049
Subject(s): Other classification:
  • online - DeGruyter
Online resources: Available additional physical forms:
  • Issued also in print.
Contents:
Frontmatter -- Classification Scheme -- Contents -- Review Article -- Failure Physics of Integrated Circuits and Relationship to Reliability -- Original Papers -- Application of Hyperbolic Temperature Variation to the Analysis of Continuous and Stepwise Isochronal Curves and to the Problem of Quenching in Vacancies -- Grain-Boundary Deformation in Nickel Irradiated by α-Particles -- Injection and Thermodepolarization Currents in YbGa2Se4 Single Crystals -- Velocity Overshoot of Electrons in GaAs with Space Charge and Non-Uniform Field -- Electrical Resistivity of Some Directionally-Solidified Aluminum-Based Eutectic Alloys -- High-Field DC Conductivity in n-Type CdS Single Crystals Annealed in Molten Indium -- Luminescent Centre Formation Processes in Activated CdS Phosphors -- Dislocations in Deformed ZnSe Single Crystals as Studied by Weak-Beam Electron Microscopy -- Development of Faulted Dislocation Dipoles in Silicon during High Temperature Deformation -- Incoherent Light Annealing of Phosphorus-Doped Polycrystalline Silicon -- Easy Magnetization Axes in Materials with Combined Cubic and Uniaxial Anisotropics -- Anomalous Behaviour of Nonlinear Dielectric, Elastic, and Electromechanical Coefficients at Ferroelectric Phase Transitions -- Monte-Carlo Calculation of Electron Attenuation in SiO2 -- Influence of Bulk and Interface Properties on the Electric Transport in ABO3 Perovskites -- TDPAC Investigation of 111Cd in Silicon after Recoil Implantation of the Parent Nuclei 111In -- A Simple Approach to the Analysis of Ion Collision Cascade in Solids Based on the Shock Wave Model -- On the Structure of the Precipitation-Free Zone in Two Al-Zn-Mg Alloys after Various Heat Treatments -- Thin-Film Photodetectors with High Quantum Yields Achieved by Induced Resonance Total Absorption -- The Efficiency of Electron Impact Excited Luminescence in ZnS Thin Film Devices -- The Influence of Substrate Temperature on the Oriented Growth of Ni and Ni2Si on Si(111) -- Breakdown Voltage Modeling in Mesa Power Devices -- Single Crystal 2,4-Hexadiynylene-Bis (p-Toluenesulfonate): Mastic Properties and Phase Transitions in the Monomer and Polymer -- Analysis of Resistivity, Hall Effect, and Magnetoresistance Measurements of Thin Bismuth Films by Means of an Anisotropic Two-Carrier Model -- Annealing Behaviour of Dilute FeCu, FeMn, and FeTi Alloys in the Temperature Range up to Stage III, Following Low-Temperature Electron Irradiation -- Xenon Ion Irradiation of α-Fe -- Calorimetric Determination of the Formation Energy for an Amorphous Layer on a Crystalline Silicon Substrate -- Recombination at Dislocations in Silicon -- Thermoluminescence of Z Centres in LiF (TLD-100) at Elevated Irradiation Temperatures -- Temperature Dependence of Intrinsic Magnetic Hardness in Some Rare-Earth Pseudobinary Compounds and Amorphous Materials -- Photogenerated Carrier Conduction Mechanisms for Schottky a-Si:H Solar Cells -- A Mössbauer-Spectroscopy Study of the Annealing of Supersaturated Solutions of 57Co in Silicon -- Low-Temperature Plasticity of CsBr and Inertial Effect of Dislocation Motion -- Effective Lifetime for Polycrystalline Solar Cells -- Specific Heat of Uranium Dioxide (UO2) between 0.3 and 50 K -- A Combined Atomistic and Monte Carlo Simulation of Point Defect-Dislocation Interactions -- Absolute Energy of the Nitrogen-Related Electron Trap in Gallium Phosphide -- The Crystal Structure and Coercive Force of SmCo5 Sintered Permanent Magnets -- Erratum -- Short Notes -- New Data on Stimulated Emission of Nd3+ Ions in Disordered Crystals with Scheelite Structure -- Détermination des paramètres de la cristallisation de couches minces de sélénium amorphe par microscopie optique -- Superconducting Properties of LaMo6S8 Thin Films -- AES Studies on Thin Film MoSi2 -- Mean Charge Depth in Non-Metallized Electrets -- Electric Field Enhanced Electron Emission from Gold Acceptor Level and A-Centre in Silicon -- Ferromagnetic Resonance in Single Particles of Amorphous F e81.5B14.5Si4 -- Fluage du germanium sous différentes orientations -- Phase Transition Behaviour of VO 2 -- Energy Transfer from Ce3+ to Eu3+ in (Y, Gd)F3 -- Some Peculiarities of High Temperature Sensitization in CdS -- Ionenpaare zwischen Chrom und flachen Akzeptoren in Silizium -- Structural Features of Pd76B24 Amorphous Alloy -- Electrical Conduction in Silicon Nitride Thin Films under 15 keV He+ Irradiation -- Quantum Yield of Current Carriers Excited by Electron Beams and Electron Penetration Depth in Thin GaP Films -- On the Electron Effective Mass in n-CuInTe2 -- Electrical Properties of H+-Irradiated p-ZnGeAs2 -- A Metastable Electron Compound Formed by Ion Irradiation -- A Theoretical Introduction for a Coincidence Site Lattice Base Computation -- Measurement of Nonlinear Electrooptic Effects in KDP Crystals -- An Infrared Study of the Glass System CaO-B2O3 • AL2 O3 • xFe2-O3 (0<x<1) -- Low-Temperature Anomalies in the Plasticity of Crystalline Materials -- Deep Level Transient Spectroscopy in TiO2:Nb -- X-Ray Diffraction Pattern and Morphology of Superconducting Nb3Sn Layer Grown on a Poly crystalline Nb Substrate of (111) Main Texture -- Decomposition of Supersaturated Antimony Solutions in Silicon Created by Pulsed Annealing of Ion-Doped Layers -- Pre-Printed Titles -- Classification Scheme -- Manuscripts and letters
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Item type Current library Call number URL Status Notes Barcode
eBook eBook Biblioteca "Angelicum" Pont. Univ. S.Tommaso d'Aquino Nuvola online online - DeGruyter (Browse shelf(Opens below)) Online access Not for loan (Accesso limitato) Accesso per gli utenti autorizzati / Access for authorized users (dgr)9783112495049

Frontmatter -- Classification Scheme -- Contents -- Review Article -- Failure Physics of Integrated Circuits and Relationship to Reliability -- Original Papers -- Application of Hyperbolic Temperature Variation to the Analysis of Continuous and Stepwise Isochronal Curves and to the Problem of Quenching in Vacancies -- Grain-Boundary Deformation in Nickel Irradiated by α-Particles -- Injection and Thermodepolarization Currents in YbGa2Se4 Single Crystals -- Velocity Overshoot of Electrons in GaAs with Space Charge and Non-Uniform Field -- Electrical Resistivity of Some Directionally-Solidified Aluminum-Based Eutectic Alloys -- High-Field DC Conductivity in n-Type CdS Single Crystals Annealed in Molten Indium -- Luminescent Centre Formation Processes in Activated CdS Phosphors -- Dislocations in Deformed ZnSe Single Crystals as Studied by Weak-Beam Electron Microscopy -- Development of Faulted Dislocation Dipoles in Silicon during High Temperature Deformation -- Incoherent Light Annealing of Phosphorus-Doped Polycrystalline Silicon -- Easy Magnetization Axes in Materials with Combined Cubic and Uniaxial Anisotropics -- Anomalous Behaviour of Nonlinear Dielectric, Elastic, and Electromechanical Coefficients at Ferroelectric Phase Transitions -- Monte-Carlo Calculation of Electron Attenuation in SiO2 -- Influence of Bulk and Interface Properties on the Electric Transport in ABO3 Perovskites -- TDPAC Investigation of 111Cd in Silicon after Recoil Implantation of the Parent Nuclei 111In -- A Simple Approach to the Analysis of Ion Collision Cascade in Solids Based on the Shock Wave Model -- On the Structure of the Precipitation-Free Zone in Two Al-Zn-Mg Alloys after Various Heat Treatments -- Thin-Film Photodetectors with High Quantum Yields Achieved by Induced Resonance Total Absorption -- The Efficiency of Electron Impact Excited Luminescence in ZnS Thin Film Devices -- The Influence of Substrate Temperature on the Oriented Growth of Ni and Ni2Si on Si(111) -- Breakdown Voltage Modeling in Mesa Power Devices -- Single Crystal 2,4-Hexadiynylene-Bis (p-Toluenesulfonate): Mastic Properties and Phase Transitions in the Monomer and Polymer -- Analysis of Resistivity, Hall Effect, and Magnetoresistance Measurements of Thin Bismuth Films by Means of an Anisotropic Two-Carrier Model -- Annealing Behaviour of Dilute FeCu, FeMn, and FeTi Alloys in the Temperature Range up to Stage III, Following Low-Temperature Electron Irradiation -- Xenon Ion Irradiation of α-Fe -- Calorimetric Determination of the Formation Energy for an Amorphous Layer on a Crystalline Silicon Substrate -- Recombination at Dislocations in Silicon -- Thermoluminescence of Z Centres in LiF (TLD-100) at Elevated Irradiation Temperatures -- Temperature Dependence of Intrinsic Magnetic Hardness in Some Rare-Earth Pseudobinary Compounds and Amorphous Materials -- Photogenerated Carrier Conduction Mechanisms for Schottky a-Si:H Solar Cells -- A Mössbauer-Spectroscopy Study of the Annealing of Supersaturated Solutions of 57Co in Silicon -- Low-Temperature Plasticity of CsBr and Inertial Effect of Dislocation Motion -- Effective Lifetime for Polycrystalline Solar Cells -- Specific Heat of Uranium Dioxide (UO2) between 0.3 and 50 K -- A Combined Atomistic and Monte Carlo Simulation of Point Defect-Dislocation Interactions -- Absolute Energy of the Nitrogen-Related Electron Trap in Gallium Phosphide -- The Crystal Structure and Coercive Force of SmCo5 Sintered Permanent Magnets -- Erratum -- Short Notes -- New Data on Stimulated Emission of Nd3+ Ions in Disordered Crystals with Scheelite Structure -- Détermination des paramètres de la cristallisation de couches minces de sélénium amorphe par microscopie optique -- Superconducting Properties of LaMo6S8 Thin Films -- AES Studies on Thin Film MoSi2 -- Mean Charge Depth in Non-Metallized Electrets -- Electric Field Enhanced Electron Emission from Gold Acceptor Level and A-Centre in Silicon -- Ferromagnetic Resonance in Single Particles of Amorphous F e81.5B14.5Si4 -- Fluage du germanium sous différentes orientations -- Phase Transition Behaviour of VO 2 -- Energy Transfer from Ce3+ to Eu3+ in (Y, Gd)F3 -- Some Peculiarities of High Temperature Sensitization in CdS -- Ionenpaare zwischen Chrom und flachen Akzeptoren in Silizium -- Structural Features of Pd76B24 Amorphous Alloy -- Electrical Conduction in Silicon Nitride Thin Films under 15 keV He+ Irradiation -- Quantum Yield of Current Carriers Excited by Electron Beams and Electron Penetration Depth in Thin GaP Films -- On the Electron Effective Mass in n-CuInTe2 -- Electrical Properties of H+-Irradiated p-ZnGeAs2 -- A Metastable Electron Compound Formed by Ion Irradiation -- A Theoretical Introduction for a Coincidence Site Lattice Base Computation -- Measurement of Nonlinear Electrooptic Effects in KDP Crystals -- An Infrared Study of the Glass System CaO-B2O3 • AL2 O3 • xFe2-O3 (0<x<1) -- Low-Temperature Anomalies in the Plasticity of Crystalline Materials -- Deep Level Transient Spectroscopy in TiO2:Nb -- X-Ray Diffraction Pattern and Morphology of Superconducting Nb3Sn Layer Grown on a Poly crystalline Nb Substrate of (111) Main Texture -- Decomposition of Supersaturated Antimony Solutions in Silicon Created by Pulsed Annealing of Ion-Doped Layers -- Pre-Printed Titles -- Classification Scheme -- Manuscripts and letters

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Issued also in print.

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In English.

Description based on online resource; title from PDF title page (publisher's Web site, viewed 01. Dez 2022)