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Physica status solidi / A. Volume 82, Number 2, April 16 / ed. by Görlich.

Contributor(s): Material type: TextTextSeries: Physica status solidi / A ; Volume 82, Number 2Publisher: Berlin ; Boston : De Gruyter, [2022]Copyright date: ©1984Edition: Reprint 2021Description: 1 online resource (370 p.)Content type:
Media type:
Carrier type:
ISBN:
  • 9783112501573
  • 9783112501580
Subject(s): Other classification:
  • online - DeGruyter
Online resources: Available additional physical forms:
  • Issued also in print.
Contents:
Frontmatter -- Contents -- Original Papers -- Structure -- Solid Phase Epitaxial Growth Anisotropy of Vacuum-Deposited Amorphous Silicon -- A Volterra-Type Dislocation Model of a Low-Angle [001] Twist Boundary in an F.C.C. Crystal -- Dynamical Effects of X-Ray Scattering in Laue Geometry for Si Crystals with Structure Defects -- Principal Component Analysis for Refractory Metal Silicide Investigations with Auger Electron Spectroscopy -- Extended Defects in Vanadium Doped Rutile -- Phase Transitions in Antimony at Hydrostatic Pressure up to 9 GPa -- Structural Perfection of Selective GaAs Regions in Si Substrate Windows -- Lattice properties -- Superelasticity Effects in Single Crystals of Cu-15% Al-2% Co with Non-Coherent Particles Due to Twinning -- Method for Obtaining the Spectrum of Plastic Strains of Mesoscopic Volume Elements in Fatigued Materials Investigated by X-Bays -- Hypersonic Wave Attenuation in Yttrium Aluminum Garnet and Gadolinium Gallium Garnet -- Defects, atomistic aspects -- A Quantitative Analysis of Image Contrast from Extrinsic Stacking Faults -- Fracture in LiF Bicrystals at Plastic Deformation -- Motion of Partial Dislocation in Silicon Carbide -- Dynamic Alterations of the Surface Composition during Sputtering of Silicides -- Interaction of Radiation Defects with the Surface of Silicon -- Low-Energy Implantation of Arsenic in Silicon -- Magnetism -- The Influence of Anisotropy-Controlled Neel Relaxation on Magnetostatic Properties of Ferrofluids -- Planar Hall Effect in Thin Amorphous RE-TM Films with Perpendicular Anisotropy -- Extended electronic states and transitions -- Electron Tunnelling in Pb/Ag Ultrathin Layered Structures -- Localized electronic states and transitions -- A New (Non-Copper-Induced) 1.35 eV Emission Band in n-Type GaAs -- The Effect of Dislocations on the Charge-Carrier Recombination Processes in Irradiated Silicon -- Current DLTS Spectra of MIS Structures Due to Dielectric Polarization of the Insulator -- Model of the Electroluminescence in Short-Pulse-Excited Thin-Film Structures Based on ZnS: Mn -- The Effect of Heat Treatment on Compensated CZ Silicon -- Electric transport -- Photoconductivity and Energy Level Structure of 2,4,7-Trinitro-9-Fluorenone Thin Films -- The Effect of Void Size on the Resistivity of Sintered Tungsten -- Transport Properties of n-Type CuInSe2 -- Doping Properties of Pb and Ge in Bi2Te3 and Sb2Te3 -- Electrical and Galvanomagnetic Properties of Films in the CuxFe1-xCr2S4 System -- Photovoltaic Effects in Nematic and Cholesteric Mesophases Containing Nonmesogenic Compounds -- Device-related phenomena -- The Double SQUID as a Digital Memory Cell -- Short Notes -- Structure -- Commensurate-Commensurate Phase Transitions in (NH4)2CoCl4 -- Epitaxial Regrowth of Amorphous or Polycrystalline Silicon Layers on Silicon Single Crystals and Bridging Epitaxy by Flash Lamp Irradiation -- On the Phase Transition of KH2PO4 at T 110°C -- On the Phase Transition and Crystal Field Effects in FeSiF6*6H2O2 -- Détermination de la structure cristallographique de la phase de type G Ni16Mn6As7 -- Lattice properties -- The Linear Thermal Expansion Coefficient of a GaxIn1-xAsyP1-y Layer on InP:Sn Substrate -- Defects, atomistic aspects -- Small Angle Neutron Scattering on a Reactor Beam Irradiated Silicon Single Crystal -- An Approximate Method for Determining the Segregation Coefficient of the Boron Drive Diffusion in Oxidizing Ambients -- VK Centres in Thermo-Exoemission from CsBr:Tl -- Multipulse 1H NMR Study of Proton Self-Diffusion in Scandium and Lutetium Dihydride -- Magnetism -- Isotopic Effect in Neutron-Irradiated Fe40Ni40B20 Alloys -- The Structural Diagrams of Magnetic Decompositive Alloys -- Magnetic Moment and Its Temperature Variation of Amorphous (Fe0.5Ni0.5)1-xBx Alloys -- Magnetic Moment of Amorphous Co1-xNbx Alloys and Friedel' s Model -- Magnetoelastic Properties of Fe1-xBx Amorphous Thin Films -- Extended electronic states and transitions -- Composition Dependence of the Optical Energy Gap in Pb1-xHgxTe Alloy Thin Films -- Localized electronic states and transitions -- Concentrational 3.urn Stimulated Emission Tuning in the (Gd1-XErx)3Al5O12 Crystal System -- Electric transport -- Electrical Properties of Electron- and Proton-Irradiated GaAs and ZnGeAS2 Solid Solutions -- Deposition of Bi2CdS4 Films by the Spray Pyrolysis Technique -- Native Acceptor Defects in Chlorine Doped Single Crystals of CdTe -- Device-related phenomena -- Temperature Dependence of Minority Carrier Lifetime in yPE GaP:N, Te -- Negative Differential Resistance in the I-U Characteristics of Surface Oxide Transistors -- Pre-Printed Titles -- of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b) -- Backmatter
Holdings
Item type Current library Call number URL Status Notes Barcode
eBook eBook Biblioteca "Angelicum" Pont. Univ. S.Tommaso d'Aquino Nuvola online online - DeGruyter (Browse shelf(Opens below)) Online access Not for loan (Accesso limitato) Accesso per gli utenti autorizzati / Access for authorized users (dgr)9783112501580

Frontmatter -- Contents -- Original Papers -- Structure -- Solid Phase Epitaxial Growth Anisotropy of Vacuum-Deposited Amorphous Silicon -- A Volterra-Type Dislocation Model of a Low-Angle [001] Twist Boundary in an F.C.C. Crystal -- Dynamical Effects of X-Ray Scattering in Laue Geometry for Si Crystals with Structure Defects -- Principal Component Analysis for Refractory Metal Silicide Investigations with Auger Electron Spectroscopy -- Extended Defects in Vanadium Doped Rutile -- Phase Transitions in Antimony at Hydrostatic Pressure up to 9 GPa -- Structural Perfection of Selective GaAs Regions in Si Substrate Windows -- Lattice properties -- Superelasticity Effects in Single Crystals of Cu-15% Al-2% Co with Non-Coherent Particles Due to Twinning -- Method for Obtaining the Spectrum of Plastic Strains of Mesoscopic Volume Elements in Fatigued Materials Investigated by X-Bays -- Hypersonic Wave Attenuation in Yttrium Aluminum Garnet and Gadolinium Gallium Garnet -- Defects, atomistic aspects -- A Quantitative Analysis of Image Contrast from Extrinsic Stacking Faults -- Fracture in LiF Bicrystals at Plastic Deformation -- Motion of Partial Dislocation in Silicon Carbide -- Dynamic Alterations of the Surface Composition during Sputtering of Silicides -- Interaction of Radiation Defects with the Surface of Silicon -- Low-Energy Implantation of Arsenic in Silicon -- Magnetism -- The Influence of Anisotropy-Controlled Neel Relaxation on Magnetostatic Properties of Ferrofluids -- Planar Hall Effect in Thin Amorphous RE-TM Films with Perpendicular Anisotropy -- Extended electronic states and transitions -- Electron Tunnelling in Pb/Ag Ultrathin Layered Structures -- Localized electronic states and transitions -- A New (Non-Copper-Induced) 1.35 eV Emission Band in n-Type GaAs -- The Effect of Dislocations on the Charge-Carrier Recombination Processes in Irradiated Silicon -- Current DLTS Spectra of MIS Structures Due to Dielectric Polarization of the Insulator -- Model of the Electroluminescence in Short-Pulse-Excited Thin-Film Structures Based on ZnS: Mn -- The Effect of Heat Treatment on Compensated CZ Silicon -- Electric transport -- Photoconductivity and Energy Level Structure of 2,4,7-Trinitro-9-Fluorenone Thin Films -- The Effect of Void Size on the Resistivity of Sintered Tungsten -- Transport Properties of n-Type CuInSe2 -- Doping Properties of Pb and Ge in Bi2Te3 and Sb2Te3 -- Electrical and Galvanomagnetic Properties of Films in the CuxFe1-xCr2S4 System -- Photovoltaic Effects in Nematic and Cholesteric Mesophases Containing Nonmesogenic Compounds -- Device-related phenomena -- The Double SQUID as a Digital Memory Cell -- Short Notes -- Structure -- Commensurate-Commensurate Phase Transitions in (NH4)2CoCl4 -- Epitaxial Regrowth of Amorphous or Polycrystalline Silicon Layers on Silicon Single Crystals and Bridging Epitaxy by Flash Lamp Irradiation -- On the Phase Transition of KH2PO4 at T 110°C -- On the Phase Transition and Crystal Field Effects in FeSiF6*6H2O2 -- Détermination de la structure cristallographique de la phase de type G Ni16Mn6As7 -- Lattice properties -- The Linear Thermal Expansion Coefficient of a GaxIn1-xAsyP1-y Layer on InP:Sn Substrate -- Defects, atomistic aspects -- Small Angle Neutron Scattering on a Reactor Beam Irradiated Silicon Single Crystal -- An Approximate Method for Determining the Segregation Coefficient of the Boron Drive Diffusion in Oxidizing Ambients -- VK Centres in Thermo-Exoemission from CsBr:Tl -- Multipulse 1H NMR Study of Proton Self-Diffusion in Scandium and Lutetium Dihydride -- Magnetism -- Isotopic Effect in Neutron-Irradiated Fe40Ni40B20 Alloys -- The Structural Diagrams of Magnetic Decompositive Alloys -- Magnetic Moment and Its Temperature Variation of Amorphous (Fe0.5Ni0.5)1-xBx Alloys -- Magnetic Moment of Amorphous Co1-xNbx Alloys and Friedel' s Model -- Magnetoelastic Properties of Fe1-xBx Amorphous Thin Films -- Extended electronic states and transitions -- Composition Dependence of the Optical Energy Gap in Pb1-xHgxTe Alloy Thin Films -- Localized electronic states and transitions -- Concentrational 3.urn Stimulated Emission Tuning in the (Gd1-XErx)3Al5O12 Crystal System -- Electric transport -- Electrical Properties of Electron- and Proton-Irradiated GaAs and ZnGeAS2 Solid Solutions -- Deposition of Bi2CdS4 Films by the Spray Pyrolysis Technique -- Native Acceptor Defects in Chlorine Doped Single Crystals of CdTe -- Device-related phenomena -- Temperature Dependence of Minority Carrier Lifetime in yPE GaP:N, Te -- Negative Differential Resistance in the I-U Characteristics of Surface Oxide Transistors -- Pre-Printed Titles -- of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b) -- Backmatter

restricted access online access with authorization star

http://purl.org/coar/access_right/c_16ec

Issued also in print.

Mode of access: Internet via World Wide Web.

In English.

Description based on online resource; title from PDF title page (publisher's Web site, viewed 01. Dez 2022)