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| 084 | _aonline - DeGruyter | ||
| 245 | 0 | 0 |
_aPhysica status solidi / A. _nVolume 12, Number 1, _pJuly 16 / _ced. by Görlich. |
| 250 | _aReprint 2021 | ||
| 264 | 1 |
_aBerlin ; _aBoston : _bDe Gruyter, _c[2021] |
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| 264 | 4 | _c©1972 | |
| 300 | _a1 online resource (404 p.) | ||
| 336 |
_atext _btxt _2rdacontent |
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_acomputer _bc _2rdamedia |
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_aonline resource _bcr _2rdacarrier |
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_atext file _bPDF _2rda |
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_aPhysica status solidi / A. ; _vVolume 12, Number 1 |
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| 505 | 0 | 0 |
_tFrontmatter -- _tClassification Scheme -- _tContents -- _tSystematic List -- _tReview Article -- _tElectric and Magnetic Properties of Linear Conducting Chains -- _tOriginal Papers -- _tMossbauer Study of Substituted Rare-Earth Ortho-Ferrites -- _tHydrostatic Pressure Effect on Dislocations -- _tStacking-Faults in Deformed Molybdenum Diselenide (MoSe2) -- _tThe Epitaxial Growth of H.C.P. Cobalt Evaporated onto LiF Substrates -- _tBound-to-Bound Emission at 510 nm in Cadmium Sulphide -- _tEffect of Impurity Gradient on the Time Delays and Q-Switching in Junction Lasers -- _tElectrical Transport Properties of Polycrystalline Tellurium Films Deposited on Mica -- _tFrequency Response of Si-Si02 Interface States on Thin Oxide MOS Capacitors -- _tMeasurements of the Polarizability of Tungsten Adatoms on Tungsten (110) Planes -- _tAn Elastic Model for a Dilute Semi-Crystalline Polymer -- _tCritical Superparamagnetism -- _tDielectric Relaxation in Multi-Domain TGS Single Crystals -- _tPlastic Deformation and Brittleness of Fe-Co-V -- _tEffects of Traps on the Acoustoelectric Properties of Photoconducting CdSe -- _tLuminescence and Photoconductivity of Undoped p-GaSb -- _tX-Ray-Excited Optical Fluorescence from Pure and Rare-Earth-Doped Magnesium and Calcium Oxides -- _tThe Hole Drift Mobility of Vitreous Selenium -- _tPhotoconductive Properties of PbTe and Pb 0.8 Sn 0.2 Te Epitaxial Films -- _tCation Transport in SiO2 -- _tLow-Frequency Current Oscillations in High-Resistivity, Au-Loped Silicon Junctions with Two Schottky Contacts -- _tNMR of 59Co in K3Co(CN)6 (II) -- _tDielectric Properties of Lithium Sulphate at Radio and Microwave Frequencies -- _tDiffusion von Bor in Silizium aus dotierten Oxiden -- _tThe Effect of the Initial Dislocation Density on Dislocation Multiplication and Work-Hardening Characteristics of Copper Single Crystals -- _tGralvanomagnetic Effects in p-Type Germanium -- _tThe Electrical Behavior of CdSe between Room Temperature and 600 °C -- _tAbsorption and Excitation in Multiple Borrmann Diffraction -- _tSurface Properties of the Gallium Monochalcogenides -- _tDefect and Excess Regions of the Kikuchi Band -- _tSilver-Mercury Whiskers -- _tLocalized States and Electron-Hole Processes in BiI3 Crystals -- _tDiffraction of Light in Magnetic Stripe-Structure -- _tThermal Annealing of X-Ray-Induced Defects in Sr-Doped KCl Crystals -- _tFigure -- _tShort Notes -- _tOn Some Acoustoelectronic Phenomena in Piezosemiconductors at Large Sound Intensities -- _tPreparation of ZnSiP2 by a Sublimation Technique -- _tDisplacement of Arsenic Atoms in Silicon Crystal during Irradiation -- _tElectrical and Structure Sensitive Measurements on Ion Implanted GaAs -- _tInvestigation of Polymorphic Transformations in Ag2Se -- _tOn the Luminescence of LaTaO4 -- _tOn the Influence of Nonstoichiometric Deviations of Cadmium Sulphide Powders on Its Electroluminescence Brightness -- _tField Effect and Electrical Conductivity in InSb after Heat Treatment -- _tInteraction between Charges and Librational Excitations in Solid Metal-Ammonia Solutions -- _tThermal Change of Permeability with Resonance Type Profiles in Ferrites and Garnets -- _tOperative Slip Systems inβ-Phase Ag-Cd and Ag-Zn Alloys -- _tSome Physical Properties of Vitreous As2Se3 Doped with III.A Group Elements -- _tA Relation of Photoelectric Work Function with Surface Composition on 2.89wt% Si-Fe(100) Single Crystal -- _tFrequency Dependent Conductivity of Anthracene Single Crystals under Monopolar Injection -- _tInfluence of the Schottky Effect and the Peculiarities in the Distribution of the Applied Voltage on the Thickness of the Depletion Layer and the Volt-Ampere Characteristics of a Semiconductor with Blocking Contact -- _tSemiconducting Properties of Thallium Telluride -- _tThe Effect of Impurity Atoms on the Recovery of Neutron Irradiated Copper at 78 °K -- _tPre-printed Titles -- _tAuthor Index |
| 506 | 0 |
_arestricted access _uhttp://purl.org/coar/access_right/c_16ec _fonline access with authorization _2star |
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| 530 | _aIssued also in print. | ||
| 538 | _aMode of access: Internet via World Wide Web. | ||
| 546 | _aIn English. | ||
| 588 | 0 | _aDescription based on online resource; title from PDF title page (publisher's Web site, viewed 01. Dez 2022) | |
| 650 | 7 |
_aSCIENCE / General. _2bisacsh |
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| 850 | _aIT-RoAPU | ||
| 856 | 4 | 0 | _uhttps://doi.org/10.1515/9783112480687 |
| 856 | 4 | 0 | _uhttps://www.degruyter.com/isbn/9783112480687 |
| 856 | 4 | 2 |
_3Cover _uhttps://www.degruyter.com/document/cover/isbn/9783112480687/original |
| 942 | _cEB | ||
| 999 |
_c272882 _d272882 |
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