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| 008 | 221201t20211986gw fo d z ger d | ||
| 020 | _a9783112480830 _qprint | ||
| 020 | _a9783112480847 _qPDF | ||
| 024 | 7 | _a10.1515/9783112480847 _2doi | |
| 035 | _a(DE-B1597)9783112480847 | ||
| 035 | _a(DE-B1597)599804 | ||
| 035 | _a(OCoLC)1286806574 | ||
| 040 | _aDE-B1597 _beng _cDE-B1597 _erda | ||
| 072 | 7 | _aSCI000000 _2bisacsh | |
| 084 | _aonline - DeGruyter | ||
| 245 | 0 | 0 | _aPhysica status solidi / A. _nVolume 98, Number 1, _pNovember 16 / _chrsg. von Görlich. | 
| 250 | _aReprint 2021 | ||
| 264 | 1 | _aBerlin ; _aBoston : _bDe Gruyter, _c[2021] | |
| 264 | 4 | _c©1986 | |
| 300 | _a1 online resource (452 p.) | ||
| 336 | _atext _btxt _2rdacontent | ||
| 337 | _acomputer _bc _2rdamedia | ||
| 338 | _aonline resource _bcr _2rdacarrier | ||
| 347 | _atext file _bPDF _2rda | ||
| 490 | 0 | _aPhysica status solidi / A. ; _vVolume 98, Number 1 | |
| 505 | 0 | 0 | _tFrontmatter -- _tAuthor Index -- _tContents -- _tOriginal Papers and Short Notes -- _tStructure -- _tExperimental Determination of Electron Escape Weight Functions by Using the Methods oi "Calibrated Amorphous Layers" and "Total External Reflection" -- _tReanalysis of the Burgers Circuit -- _tPolymorphism and Electronic Properties of 3-Ethyl-5-[2- (3-Ethyl-2-Benzothiazolinylidene)- Ethylidene] -Rhodanine -- _tOrientation Dependence of the Effective Depth of X-Ray Penetration -- _tInterstitial Atom Ordering in Binary Fe-N Solid Solutions Studied by Mössbauer Spectrometry -- _tOn the Influence of Ar+ Ion Bombardment on the SiLVV Auger Line in Silicon Nitride Films -- _tFormation of Texture in Co/Cr Films for Perpendicular Magnetic Recording -- _tOn the Stability of Metastable Precipitates in an Al-1.87 at% Cu Alloy at Elevated Temperature -- _tCrystallization of Metallic Glass Pd80Si20 -- _tStudy of Crystal and Electronic Structure of Ti-Cr Alloys during Decomposition of ß-Solid Solution -- _tLattice properties -- _tFerroelectricity Associated with the Metastable Phase III of AgNO3 -- _tRaman Scattering in Glow Discharge Si:H:Cl Films -- _tMechanisms for Martensitic Transformations in A15 Superconductors -- _tDefects, atomistic aspects -- _tEffect of High AC Field and X-Ray Irradiation on the Dielectric Properties of Quenched LiF Single Crystals -- _tHigh Temperature Internal Friction Peak in High Purity Single Crystal Aluminium Sheets and Electron Microscopic Observation on the Related Dislocation Configurations -- _tInternal and Effective Stresses in the Steady-State Creep of Polycrystalline Cadmium at 0.5 Tm -- _tPositron Annihilation in Polyethylene Samples Studied by the Doppler Broadening of the Annihilation Radiation Lineshape Technique -- _tDifferent Etch Pit Shapes Revealed by Molten KOH Etching on the (001) GaAs Surface and Their Dependence on the Burgers Vectors -- _tDefect Study of ß-TbH(D)1.9+x -- _tCore Structure of the a<100> <001> Edge Dislocation in a B2 Ordered Alloy -- _tCreep of CoO Single Crystals -- _tEvaluation of Critical Resolved Shear Stress for Systems with General Periodic Stress Fields -- _tThe Low-Temperature Interdiffusion in Compositionally Modulated Nb-Ti Films -- _tMagnetism -- _tMagnetic and Crystallographic Properties of Gd(Cu1+x Cox)2 -- _tMagnetic Properties of Metastable α-Mn-Type Mn1-y Fey Alloys Produced by Vapor Quenching -- _tLocalized electronic states and transitions -- _tThermoluminescence of K2Cd2(S04)3 -- _tRole of the Background Current in Analysing the ITC Spectrum -- _tElectric Field Effect on Characteristics of Indium Antimonide MOS Structures -- _tElectric transport -- _tThe Field and Spectrum Dependences of Impurity Photoconductivity with Exclusion in Compensated Semiconductors -- _tA Simple Detection Method in Photothermal Deflection Measurements on Thin-Film Semiconductors -- _tElectrical Resistivity and Magnetization Studies of Some Commercial Steels -- _tScattering Anisotropy of Conduction Electrons in CuBe Alloys -- _tChanges of Electrical Conductivity, Magnetic Susceptibility, and IR Spectra in the Ternary System MOn-x WxO3n-1 -- _tUpper Critical Field Deduced from Critical Current Data -- _tγ-Irradiation Effect on Electronic Properties in Hydrogenated Amorphous Silicon -- _tCharge Transport through Layers of Thermally Nitrided SiO2 -- _tShort Notes -- _tA Method for Studying Parameter Variations in VPE Technology -- _tSur certains effets multifaisceaux en faisceau convergent -- _tContributions of Elastic Strain and Electric Field to Acousto-Optic Diffraction in LiNbO3: Ti -- _tLow Temperature Thermal Expansion of Cubic Ionic Crystals -- _tDetermination of the Sign of a Dissociated Dislocation in Weak Beam -- _tSynthesis and Characterization of NASICON Based Glass -- _tMacrodefects of Pyrolytic Boron Nitride Structure -- _tRole of Grain Boundary Movements on the Creep Rate Sensitivities in Aluminium -- _tPeculiarities of Minority Carrier Lifetime Variations in p-n-p-n Structures Fabricated upon Neutron-Transmutation Doped Silicon and Irradiated by Fast Electrons -- _tAnomalous Temperature Dependence of Magnetocrystalline Anisotropy Constants of BaIn 1.5Fe10.5 O19 Single Crystals -- _tInfluence of Hydrogen on the Magnetic Properties of the U-Co System -- _tOn the Influence of the Single Particle Coercivities on the Virgin Curves of Poly crystalline Magnets -- _tSpectral Composition and Kinetics of 2 um Stimulated Emission of Ho3+Ions in Sensitized Y3Al5O12 and Lu3Al5O12 Single Crystals -- _tThermally Stimulated Luminescence of NaAlSi3O8 and Its Analysis -- _tInvestigations of Interface States in Si/Si-Oxynitride/Al Structures Using DLTS -- _tEPR of Laser Material SrAlF5:Cr3+ -- _tCrystal Growth and Spectroscopic Properties of Nd3+ Ions in a New Nonstoichiometric Bismuth Phosphate Bi5.8 PO11.2 -- _tElectrical Resistivity of Amorphous Antimony Trisulphide Films -- _tDielectric Relaxation in ND4DSeO4 (d-AHSe) -- _tSpontaneous and Field Induced Current Peaks at the Order-Disorder Phase Transition of NH4Cl -- _tOn the Ubiquity of Ion Bombardment Modification of Silicon Schottky Barriers -- _tPre-Printed Titles | 
| 506 | 0 | _arestricted access _uhttp://purl.org/coar/access_right/c_16ec _fonline access with authorization _2star | |
| 530 | _aIssued also in print. | ||
| 538 | _aMode of access: Internet via World Wide Web. | ||
| 546 | _aIn German. | ||
| 588 | 0 | _aDescription based on online resource; title from PDF title page (publisher's Web site, viewed 01. Dez 2022) | |
| 650 | 7 | _aSCIENCE / General. _2bisacsh | |
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| 700 | 1 | _aEfimov, V. M. _eautore | |
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| 856 | 4 | 0 | _uhttps://doi.org/10.1515/9783112480847 | 
| 856 | 4 | 0 | _uhttps://www.degruyter.com/isbn/9783112480847 | 
| 856 | 4 | 2 | _3Cover _uhttps://www.degruyter.com/document/cover/isbn/9783112480847/original | 
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