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| 008 | 221201t20221988gw fo d z eng d | ||
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_a9783112492956 _qprint |
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_a9783112492963 _qPDF |
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| 024 | 7 |
_a10.1515/9783112492963 _2doi |
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| 035 | _a(DE-B1597)9783112492963 | ||
| 035 | _a(DE-B1597)597664 | ||
| 035 | _a(OCoLC)1294424835 | ||
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_aDE-B1597 _beng _cDE-B1597 _erda |
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_aSCI000000 _2bisacsh |
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| 084 | _aonline - DeGruyter | ||
| 245 | 0 | 0 |
_aPhysica status solidi / A. _nVolume 108, Number 2, _pAugust 16 / _ced. by Görlich. |
| 250 | _aReprint 2021 | ||
| 264 | 1 |
_aBerlin ; _aBoston : _bDe Gruyter, _c[2022] |
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| 264 | 4 | _c©1988 | |
| 300 | _a1 online resource (446 p.) | ||
| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_acomputer _bc _2rdamedia |
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_aonline resource _bcr _2rdacarrier |
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_atext file _bPDF _2rda |
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_aPhysica status solidi / A. ; _vVolume 108, Number 2 |
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| 505 | 0 | 0 |
_tFrontmatter -- _tContents -- _tOriginal Papers -- _tTransformation of the Angular-Dependent Form of X-Ray Diffraction into the Photon-Energy-Dependent Form for Grazing Incidence2) -- _tDislocations in BaTiOs Ceramics -- _tLifetime and Crystal Order in Annealed CZ Silicon -- _tHREM Image of a Vacancy in Copper -- _tA Kinetic Investigation of Cluster Formation in Semiconductors at Elevated Temperatures -- _tA Study of the Diffusion of Indium into TaS2 and TaSe2 in a Scanning Electron Microscope -- _tThermal Oxidation of Ion Implanted Copper -- _tImpurity Clustering Effects in Magnesium-Doped Lithium Fluoride -- _tInternal Friction Due to Kink Motion and Kink Pair Formation in Intrinsic and n-Doped Germanium -- _tOn the Origin of the Macrocrystalline Internal-Friction Peak (the Bamboo Boundary Peak) -- _tPrecipitation and Grain Boundary Internal Friction Peaks in Al-Mg-Si -- _tElastic Anomalies and Martensite Nucleation in ß-Phase Alloys -- _tPhase Diagram, Optical Energy Gap, and Magnetic Susceptibility of (CuIn)i„«Mn2iSe2 Alloys -- _tHigh-Temperature Elastic Behaviour of Mn-Mg Mixed Ferrites -- _tInternai Friction Transitory Effects Associated with Martensitic Transformation in Ni-Ti Alloys -- _tSimulation of Residual Photoconductivity at a Metal-Semiconductor Contact -- _tThermally Stimulated Depolarization Current Controlled by Surface Charge Change -- _tPhotoluminescence and EPR Spectra of Fe-Doped Grai_xInxP Epitaxial Layers -- _tSize Effects in Polycrystalline PbSe Tilms Obtained by Chemical Deposition -- _tInfluence of In on Transport Properties and Phase Transition in Pbx-ÄTe Thin Films -- _tInterference Thickness Oscillations of an X-Ray Wave on Periodically Profiled Silicon3) -- _tOn the Mechanism of Polarized Electroluminescence from Light-Emitting Structures Based on GaN -- _tCharged Dislocations in Semiconductors -- _tOn the Improvement of the Semiinsulating GaAs Substrate Homogeneity Due to Annealing -- _tThermal Activation Energies of TJndoped Semi-Insulating LEC GaAs -- _tCarrier Mobility in PbTe(I) -- _tInvestigations of the Magnetic Properties and Demagnetization Processes of an Extremely High Coercive Sm(Co, Cu, Fe, Zr)7.e Permanent Magnet -- _tMagnetic Disaccommodation in Ferrous Zinc Ferrites -- _tTemperature Dependence of the g-Tensor of N-Methyl-N-Ethyl Morpholinium Tetracyanoquinodimethane -- _tEffect of Pressure on the Symmetric Hydrogen Bond in (CCl3COO)2HK -- _tInfluence of Neutron Irradiation on the Magnetic Properties of FeNiCrMoSiB Amorphous Alloys -- _tThermoluminescence Processes in CaFa:Ce, Mn -- _tPolarisation Phenomena in PbF2 Superionic Crystals -- _tElectro-Optical Effect in KCl:Cd2+ and KCl:Sr2+ -- _tOptical Energy Gap and Thermal Diffusivity of Oe-Se Semiconducting Glasses -- _tSome Thermoluminescence Properties of an «-A1203 Sample Sensitization Effects -- _tLuminescence and Site Occupation of Cr3+ in Sodium-P"-Alumina -- _tAnalytical Modelling of a MOSFET with Non-Uniform Impurity Profile -- _tCalculation of the C-U Profiles of Graded Heterojunctions -- _tShort Notes -- _tOn the Theory of X-Ray Diffraction by Surface Acoustic Waves -- _tInvestigation of the Amorphization Process in GaAs and GaP by Means of Optical Spectroscopy -- _tOptical Absorption of Quenched and f-Ray Irradiated BaF^ Single Crystals Later Subjected to High Electric Fields or Laser Excitation -- _tDiffusion of Implanted Hydrogen in a Silicon Film under Stress of a Standing Sound Wave -- _tModification of the Electrical Surface Conductivity of Lead-Silicate Glasses by Hg Ion Bombardment -- _tPhotoelectrochemical Cells with p-Type Poly(3-Methylthiophene) -- _tOn a Mechanism of Photo-E.M. F. Formation in SIS Structures -- _tEffect of Surface Treatment on the Photoanodic Behaviour of Thin Film n-CdSe -- _tPhotoconductivity in Bulk and Epitaxial GaAs:V -- _tCorrelations between Current-Voltage Characteristics and Visible Defect Channels in Thin SiOg Films after Field Stress -- _tOn the Nature of Structural Defects in SiOg Films Visible with the Aid of the Liquid Crystal Technique -- _tESR and IR Studies on P-Doped a-Si:H/a-Si:H Junctions2 -- _tLuminescence Characterization of K^NbgOj^ Crystals -- _tPreparation and Interband Transitions of Chemically Deposited FegO, Coatings in the Fundamental Absorption Region -- _tPhotochromic Properties of Tungsten Trioxide Films Made by Electron Beam Deposition -- _tReducing Effects on the CL Red Emission of MgO Doped Crystals -- _tOn the Photoresponse of Cu-Treated CugS/CdS Thin Film Solar Cells -- _tPre-Printed Titles |
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_arestricted access _uhttp://purl.org/coar/access_right/c_16ec _fonline access with authorization _2star |
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| 530 | _aIssued also in print. | ||
| 538 | _aMode of access: Internet via World Wide Web. | ||
| 546 | _aIn English. | ||
| 588 | 0 | _aDescription based on online resource; title from PDF title page (publisher's Web site, viewed 01. Dez 2022) | |
| 650 | 7 |
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| 856 | 4 | 0 | _uhttps://doi.org/10.1515/9783112492963 |
| 856 | 4 | 0 | _uhttps://www.degruyter.com/isbn/9783112492963 |
| 856 | 4 | 2 |
_3Cover _uhttps://www.degruyter.com/document/cover/isbn/9783112492963/original |
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_c273383 _d273383 |
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