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| 245 | 0 | 0 |
_aPhysica status solidi / A. _nVolume 88, Number 1, _pMay 16 / _ced. by Görlich. |
| 250 | _aReprint 2021 | ||
| 264 | 1 |
_aBerlin ; _aBoston : _bDe Gruyter, _c[2022] |
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| 264 | 4 | _c©1985 | |
| 300 | _a1 online resource (520 p.) | ||
| 336 |
_atext _btxt _2rdacontent |
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_acomputer _bc _2rdamedia |
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_aonline resource _bcr _2rdacarrier |
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_aPhysica status solidi / A. ; _vVolume 88, Number 1 |
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| 505 | 0 | 0 |
_tFrontmatter -- _tClassification Scheme -- _tAuthor Index -- _tPhysica status solidi (a) applied research -- _tContents -- _tReview Article -- _tInjection of Degenerate Electron-Hole Plasma -- _tOriginal Papers and Short Notes -- _tStructure -- _tAC Conductivity, Calorimetric, X-Ray, and Raman Study of the Hexagonal Phase TlInS2-III -- _tCoherence Description of a Double Crystal Diffractometer -- _tEffect of Structure Transformation on Creep and Creep Recovery of Al-14 wt%Zn -- _tExact Solution of the Takagi-Taupin Equation for Dynamical X-Ray Bragg Diffraction by a Crystal with a Transition Layer -- _tDouble-Crystal Topographic Investigation of Misfit Dislocations in Silicon Epitaxial Layers -- _tThin e-Phase Films Prepared by Alloy Evaporation -- _tShape and Arrangement of the "Hexagonal Domain" and Distribution of Ferroelectric Domains in GASH Single Crystals -- _tDestructive Interference and Multiple Scattering Effects Observed in Ca K-Edge EXAFS Spectra -- _tDetermination of Thermodynamic Parameters of the Amorphous Selenium Films Crystallization -- _tPhase Transition in the System Solid-Gas Admixture Due to the Macroscopic Defect Formation and Growth -- _tThe Structure of Twist Boundaries in Terms of Surface Dislocations -- _tThe Transformation e -> a" in Iron-Nitrogen Solid Solutions Studied by Mössbauer Spectrometry -- _tAn X-Ray Interferometer with an Elastically Deformed Crystal -- _tThe Application of Landau's Theory for Studying First-Order Phase Transitions by the Internal Friction Method -- _tLattice properties -- _tNeutron Powder Diffraction Study of the Debye-Waller Factor in TiC and TiN Compounds and Comparison with X-Ray Results -- _tSurface Layers and Far-Infrared Quasi-Harmonic Oscillators in Triglycine Sulphate at 4 K -- _tDefects, atomistic aspects -- _tDielectric Relaxations in Dy2O2 -- _tSteady-State Creep and Strain Transients for Stress Change Tests in an Al-0.4 wt% Li Solid Solution Alloy -- _tDiffusion and Recrystallization Processes during Annealing of N+- and P+- Implanted LiNbO 3 -- _tDissociation of Superdislocations and Damping in the Ll2 Ordered Structure -- _tDislocation-Structure Changes during the Dip Tests and the Dynamical Internal Stress in Al-Mg Alloys at High Temperatures -- _tThe Strength and Plasticity of GaAs in Saturated Melts of Solvent Metals at the Temperature of Epitaxy -- _tMagnetism -- _tMagnetic Properties and 57 Fe Mössbauer Effect in V 1-x Fe x Alloys -- _tElastic Behaviour of Mixed Li-Ni Ferrites -- _tExtended electronic states and transitions -- _tMonte-Carlo Simulation of keV-Electron Scattering in Solid Targets -- _tLocalized electronic states and transitions -- _tReflection and Fluorescence Emission Spectra in the Ag 1-x Cu x I System -- _tOn the Kinetics of X-Ray Induced Luminescence in Natural Quartz -- _tPhotoluminescence Spectra of Pb 1-x Sn x Te Epitaxial Layers and Heterostructures up to Room Temperature -- _tInterpretation of the Curves of Thermally Stimulated Luminescence in the Case of Tunneling Recombination -- _tElectric transport -- _tThe Electronic Properties of Macromolecular Structures with Conjugated Bonds Obtained by Chemical Modification of Certain Aliphatic Polymers -- _tNegative Charge Transport in Fluorethylenepropylene by the Constant Current Method -- _tProperties of Sputtered Amorphous Silicon Films Prepared under a Reduced Pumping Speed -- _tA New Model for AC Conduction in Disordered Solids -- _tMicrowave Anisotropy and Dichroism of Ferroelectric Crystals CH 3 NH 3 HgCl 3 -- _tTheory of Transient Currents in Dielectrics at a Limited Level of Single Injection -- _tCharge Transport in Cu-Cd Ferrospinels -- _tDouble Source Photoconductivity of InP:Fe -- _tDevice-related phenomena -- _tThe Characteristics of Thin-Film Gallium Phosphide MOS Structures with a Tunnel Transparent Native Anodic Oxide -- _tN-CdS/p-AgInSe2 Solar Cells by Electrodeposition -- _tIon Beam Contacting of Silicon. II. Antimony in n-Silicon -- _tCombination of a Silicon Photodiode and a Scintillator as a Dose Rate Detector -- _tA Simple Model of MOS Transistors on Large-Grain Polycrystalline Silicon -- _tRadiation Effects in a Photo-Coupler with High-Energy Electrons and y-Rays and Recovery by Current Annealing -- _tShort Notes -- _tStructure Images of the Hexagonal Nb 5 Ge 3 (D88) Structure -- _tStress-Induced Isothermal Formation of Films during LPE Growth of III-V Compounds with a/a=0 -- _tAtomic Arrangement in Amorphous Er4Co3 -- _tMass-Spectrometry of Tungsten-Silicon System -- _tOn the Connection between the Melting Temperature and the Parameters Obtained from Thermally Stimulated Depolarization Experiments -- _tOn the Free Energies of Hexagonal Dislocation Loops at High Temperatures -- _tOn the Behaviour of Iodine in PbTe and SnTe -- _tDoppler Broadening of the Annihilation Gamma Line in KCl and LiF -- _tOn Obtaining f-T Characteristics without Hysteresis in Quartz -- _tPreparation and Magnetic Properties of YMnSi -- _tSome Remarks on the Applicability of the Positron Annihilation Technique for Studying the Electronic Structure of Metallic Glasses -- _tAn Approximate Approach to Absorption Correction in Electron-Probe Microanalysis -- _tThe Absorption Edge of Lead(II) in Oxide Systems -- _tThe Influence of Isoelectronic Impurities on Intrinsic Deep Levels in Liquid Phase Epitaxial Gallium Arsenide -- _tA Simple Method for the Determination of Both Photoionization and Photoneutralization Cross Sections of Deep Levels by Optical DLTS -- _tOn the Thermal Resistance and Its Possible Role in Thermoluminescence Measurements -- _tDrift Mobility of Electrons Parallel to the c-Axis in InSe -- _tElectrical Conductivity Measurements to Test for Rotating Sulfate Ions in Fast Ion Conductors -- _tElectrical Properties of CaMnO 3-o -- _tIn 2 O 3 and In 2 O 3 :Sn (ITO) Films by Post-Oxidation of Metal Films -- _tOptimization of the Heat Treatment for Forming AuGe Based Contacts to n-GaAs -- _tCoordinate Sensitive Photoelement on the Basis of the Photoelectret State in Vitreous Semiconductors -- _tOptoelectronic Switches on the Basis of Mercuric Iodide (Red Phase, a-Hgl 2 ) -- _tOptical Effect in Normally-Off GaAs MESFET -- _tPre-Printed Titles -- _tPre-Printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status olidi (b) -- _tBackmatter |
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_arestricted access _uhttp://purl.org/coar/access_right/c_16ec _fonline access with authorization _2star |
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| 530 | _aIssued also in print. | ||
| 538 | _aMode of access: Internet via World Wide Web. | ||
| 546 | _aIn English. | ||
| 588 | 0 | _aDescription based on online resource; title from PDF title page (publisher's Web site, viewed 01. Dez 2022) | |
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| 856 | 4 | 0 | _uhttps://doi.org/10.1515/9783112495124 |
| 856 | 4 | 0 | _uhttps://www.degruyter.com/isbn/9783112495124 |
| 856 | 4 | 2 |
_3Cover _uhttps://www.degruyter.com/document/cover/isbn/9783112495124/original |
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