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| 084 | _aonline - DeGruyter | ||
| 245 | 0 | 0 |
_aPhysica status solidi / A. _nVolume 86, Number 1, _pNovember 16 / _ced. by Görlich. |
| 250 | _aReprint 2021 | ||
| 264 | 1 |
_aBerlin ; _aBoston : _bDe Gruyter, _c[2022] |
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| 264 | 4 | _c©1984 | |
| 300 | _a1 online resource (568 p.) | ||
| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_acomputer _bc _2rdamedia |
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_aonline resource _bcr _2rdacarrier |
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_atext file _bPDF _2rda |
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_aPhysica status solidi / A. ; _vVolume 86, Number 1 |
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| 505 | 0 | 0 |
_tFrontmatter -- _tClassification Scheme -- _tAuthor Index -- _tContents -- _tReview Article -- _tA Survey of Domains and Domain Walls Generated by Crystallographic Phase Transitions Causing a Change of the Lattice -- _tOriginal Papers and Short Notes -- _tA New Method of Evaluation oi the Structure of Molten Sodium Chloride -- _tPhase Information in Transmission Electron-Microscope Investigation of Defects. Dynamic Images with a Weak Amplitude Contrast -- _tA High Resolution Electron Microscopy Study of Domain Structure in CuAul -- _tStructural Phase Transitions of RbVF4 -- _tEvolution comparée d'alliages Cu-Al trempés revenus avant et après amincissement -- _tStructure and Properties of Silicon Dioxide Thermal Films (I) -- _tExtended versus Small Defect Equilibria in Non-Stoichiometric Rutile (I) -- _tThe Influence of an Electric DC Field on the New Intermediate Phase between the a- and b- Phases of NaH3(SeO3)2 Crystals -- _tEXAFS and X-Ray Diffractional Investigation of the Heusler-Type Alloys Co2MnSi and Fe2.4Mn0.6Al. Determination of the Ordering Probabilities -- _tOptical Reflection and Transmission through a Flat System with a Thick Fluctuating Layer -- _tVoltage Contrast of Ferroelectric Domains of Lithium Niobate in SEM -- _tBragg-Laue Diffraction in Inclined Geometry -- _tLattice properties -- _tCalculation of Potential Energy Parameters for Some Intermetallic Compounds -- _tPhotoacoustic Signal Behavior near the Ferromagnetic Resonance Field -- _tDefects, atomistic aspects -- _tHardening of Single Crystals of Magnesium by Low Neutron Doses at 77 K -- _tJump-Like Deformation and Stability of the Hardened and Structural States of Zinc Single Crystals with Forest Dislocations in the Temperature Range 293 to 4.2 K -- _tOn the Effect of Doping Impurities on the Formation of Rod-Like Defects in Silicon -- _tPositron and Positronium States in Semiconductors Irradiated by Supercurrent Beams of Charged Particles -- _tInterstitial Migration in a Stress Gradient -- _tThe Interaction of Straight Dislocations with Dislocation Loops in an Anisotropic Material (Zinc) -- _tRadiational Creation of Frenkel Defects in KC1-T1 -- _tAnisotropic Deformation Behaviour of GaAs -- _tStage II Recovery of Defects in Cold-Worked Aluminum -- _tInvestigation of the Oxygen-Related Lattice Defects in Czochralski Silicon by Means of Electron Microscopy Techniques -- _tDistant DAP Bands in Electron-Irradiated and Ion-Implanted CdSe -- _tMagnetism -- _tBarkhausen Jumps and Resistivity of Cu-Cd Ferrites -- _tMagnetic NDT Technique to Evaluate Fatigue Damage -- _tThe Permeability Dispersion in Ferrites at Different Levels of Direct Current Magnetic Biasing -- _tMagnetic Freezing in Solution-Quenched Dilute Fe-Cu Alloys -- _tMagnetic Structure of the Er2Pt Antiferromagnet -- _tLocalized electronic states and transitions -- _tStudies of the Deep Levels in p-Type InSb under Pressure -- _tA Model of Nonequilibrium Charge-Carrier Recombination in Semiconductors Containing Nonuniformities -- _tNew EPR Defects in Si<Al> -- _tFractional Glow Technique Spectroscopy of Traps in Heavily Doped AlN:O -- _tKinetics of Thermoluminescence in y-Irradiated Nal(Tl) -- _tThe Role of Eu++ Aggregation on Optical Absorption, Emission, Luminescence Time Decay, and ITC Plots in NaCl:Eu++ -- _tPure and Nd3+-Doped Ca3Ga2Ge4O14 and Sr3Ga2Ge4O14 Single Crystals, Their Structure, Optical, Spectral Luminescence, Electromechanical Properties, and Stimulated Emission -- _tElectric transport -- _tRadiation Induced Dielectric Effect in Polymers -- _tPlanar Conduction in Inhomogeneous Films. Application to Amorphous Silicon -- _tA Comparative Study of Photoconductivity in Vitreous As2Se3 and a-Si: H Thin Films -- _tThe Influence of Alloying on the Properties of Superconducting Molybdenum Sulphides -- _tElectrical Conductivity of Gadolinium-Gallium Garnet (GGG) Crystals -- _tInvestigation of Space Charge Limited, Poole-Frenkel, and Isothermal Currents on Hgl2 Single Crystals -- _tThermally Stimulated Depolarization Current Study in Novolac Phenol-Formaldehyde Resin -- _tElectrical Properties and Optical Absorption of SnSe Evaporated Thin Films -- _tDevice-related phenomena -- _tC-U Measurements of Anodized InSb MOS Structures at 77 and 4.2 K -- _tOn the Dispersion of the Refractive Index in Active Layers of Lead-Salt Injection Lasers -- _tThe Effect of Overlap of Ohmic Contacts on the Characteristics of a MIM Structure Having a Single Discrete Shallow Trap Level -- _tA Stable Pd-BN-Si3N4-SiO2-Si FET for Hydrogen Detection -- _tErratum -- _tErratum to: The Mechanism of Cell Wall Formation -- _tShort Notes -- _tGrazing Bragg-Laue Diffraction for Studying the Crystal Structure of Thin Films -- _tThe Influence of Heating on the Attenuation of Surface Waves in Electrographic Se Layer -- _tEffect of Atomic Ordering on Heat Capacity of Non-Stoichiometric Niobium Carbide -- _tSynthesis and Structural Characteristics of La2Cu1-xCoxO4 (x = 0.2, 0.4, and 0.5) -- _tLow-Temperature Heat Capacity of CdGa2S4 -- _tLattice Vibrations of Crystalline Silicon and Germanium Tetrachlorides -- _tOn the Thermodynamic Criterion for the Unstable Motion of a Source Generated Dislocation Group -- _tElectric Polarization of Ice at Nonuniform Elastic Strains -- _tOverheating in Semiconductors with a Diamond-Like Structure -- _tÜber die mögliche Existenz „repulsiver" Zentren mit großen Einfangquerschnitten in Silizium -- _tKinetics of Luminescence Quenching in Neodymium-Doped Fluorophosphate Glasses -- _tElectrophysical Properties of a-Rhombohedral Boron -- _tThermogradient Magnetoconcentration Effect -- _tThe Structure, Superconducting Properties and Electrical Resistivity of V2Zr and V2Hf Irradiated with Fast Neutrons -- _tTemperature Dependence of the Thermoelectric Characteristic of n-Si Elastically Strained in the [100] Direction -- _tAnnealing Behaviour of Electrical Properties of n-InSe Single Crystals -- _tEffect of Vacuum Annealing on Electrical Characteristics of Ni-Si Schottky Diodes -- _tDensity of the 2D Electron Gas in Modulation Doped GalnAs/AlInAs Layers from a Charge Control Analysis -- _tElectric Field Effect on Radiation-Induced Gettering of Defects in n+-n-n++ GaAs -- _tPre-Printed Titles -- _tPre-Printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b) -- _tClassification Scheme —Continued -- _tBackmatter |
| 506 | 0 |
_arestricted access _uhttp://purl.org/coar/access_right/c_16ec _fonline access with authorization _2star |
|
| 530 | _aIssued also in print. | ||
| 538 | _aMode of access: Internet via World Wide Web. | ||
| 546 | _aIn English. | ||
| 588 | 0 | _aDescription based on online resource; title from PDF title page (publisher's Web site, viewed 01. Dez 2022) | |
| 650 | 7 |
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| 856 | 4 | 0 | _uhttps://doi.org/10.1515/9783112501481 |
| 856 | 4 | 0 | _uhttps://www.degruyter.com/isbn/9783112501481 |
| 856 | 4 | 2 |
_3Cover _uhttps://www.degruyter.com/document/cover/isbn/9783112501481/original |
| 942 | _cEB | ||
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