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| 084 | _aonline - DeGruyter | ||
| 245 | 0 | 0 |
_aPhysica status solidi / A. _nVolume 84, Number 1, _pJuly 16 / _ced. by Görlich. |
| 250 | _aReprint 2021 | ||
| 264 | 1 |
_aBerlin ; _aBoston : _bDe Gruyter, _c[2022] |
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| 264 | 4 | _c©1984 | |
| 300 | _a1 online resource (468 p.) | ||
| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_acomputer _bc _2rdamedia |
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_aonline resource _bcr _2rdacarrier |
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_atext file _bPDF _2rda |
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_aPhysica status solidi / A. ; _vVolume 84, Number 1 |
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| 505 | 0 | 0 |
_tFrontmatter -- _tClassification Scheme -- _tAuthor Index -- _tContents -- _tOriginal Papers -- _tStructure -- _tNeutron Scattering Investigation on Molten Ga-Te Alloys -- _tDouble Laue Pattern Topography of Top-Seeded BaTiOs Single Crystals Using White Synchrotron X-Radiation -- _tOn Mössbauer Analysis of Mineral Mixtures Having Environmentally Broadened Spectral Lines -- _tSurface Composition of the Ordered Al50-Co50 Alloy -- _tPulsed Ion Beam Annealing of Ti-Au Alloys -- _tCrystal Structure of Fe2TiO5 -- _tThe Segregation of Iron in Tungsten -- _tPhotoeffect in X-Ray Grazing Incidence Diffraction -- _tHigh Resolution Electron Microscopic Investigations of Dislocations in Deformed GaAs Single Crystals Doped with Te -- _tLattice properties -- _tThermal Expansion of CuInTea from 30 to 300 K -- _tSeparation of Thermal Component in Diffuse Scattering from Disordered Binary Alloys -- _tElectrooptic Properties of Rb2ZnCl4 in the Incommensurate and Ferroelectric Phases -- _tOptical Properties of Bi12Si 1-x TixO20 Single Crystals -- _tDefects, atomistic aspects -- _tX-Ray Diffraction Contrast and Ray-Paths in the Case of a Dislocation in a Particular Position -- _tTheoretical Study of the Temperature Dependence of EBIC Contrast from Individual, Surface-Parallel Dislocations in a Schottky Diode -- _tOn the Gettering Efficiency of Crystal Defects in Silicon -- _tThe Exodiffusion of Hydrogen in Dislocated Crystalline Silicon -- _tInternal Friction in High-Purity Aluminium Single Crystals -- _tParamagnetic Centres in Aluminium-Oxide Layers Prepared by Anodic Oxidation -- _tDiffusion of Impurities in Undercooled Melt of Pulse Heated Ion-Implanted Silicon -- _tStudy of Thermochemically Reduced and Electron-Irradiated LiNbO3 Single Crystals by Positron Annihilation and Optical Absorption Measurements -- _tA New Long-Period Derivative of the Au5Mn2 Structure -- _tMagnetism -- _tMössbauer Studies of Small Magnetite Particles of a Magnetic Fluid -- _tPropriétés magnétiques de MnRhAs -- _tThe Effect of H2 Absorption on the Magnetic Properties of Gd-Pd Intermetallic Compounds -- _tEffect of Magnetic Vacancies on Magnetic Properties of Terbium Orthoferrites -- _tDistortion of the AFMR Line by the RF Field Power -- _tPressure Effect on Magnetic Transformations in the CoxNi 1-x MnGe System -- _tLocalised electronic states and transitions -- _tNew Oxygen-Induced Recombination Centres in 600 to 800 °C Heat-Treated Silicon -- _tEvaluation of Chromium Concentration in Semi-Insulating (*aAs:Cr from Optical Absorption -- _tInfluence of the Temperature Dependence of the Thermal Impurity Activation Energy on the Analysis of Hall Measurements on GaP -- _tSpecific Features of Piezogalvanomagnetic Effects in Oxygen-Containing Silicon Crystals in the Presence of Thermal Donors-I and -II -- _tThe Influence of Alkali Atoms Implanted in Silicon on the Negative Secondary Ion Emission -- _tSpatial Distribution of Localized Electronic States Responsible for the Polarization of Granular Insulating Thin Films -- _tThe Influence of Deep Levels on Photoemomry Effect in Structures with a Potential Barrier -- _tElectric transport -- _tElectrical Conduction in PbMoO4 Crystals -- _tExclusion Effect Quenching in Compensated Semiconductors under the Action of Impurity Illumination Generating Majority Current Carriers -- _tEffective Diffusion Length of Minority Carriers in Polycrystalline Silicon -- _tMeasurement of Electrical Potential Distribution in a Polymer near the Contact to a Metal by Means of Scanning Electron Microscopy -- _tComputer Simulation and Analytical Solutions in the Study of the Transient Radiation-Induced Conductivity in Polymers -- _tThe Annealing Effect on the Conduction Mechanism of Copper Ferrite -- _tDevice-related phenomena -- _tEvidence of Schottky Barrier Formation at Contact oi Metal with Chalcogenide Glassy Semiconductor -- _tShort Notes -- _tObservation of an Anomalously High Etch Rate in Plasma-Enhanced CVD Silicon Nitride Films -- _tThermal Expansion of Sodium-Cadmium Formate. Powder Data -- _tOn the Sign Choice in the Darwin Solution for X-Ray Diffraction in a Semi-Infinite Crystal -- _tPhosphorus Pressure Effects on GaP Crystal Quality in the Solution Growth -- _tAuger Analysis of a GaAs (111 )A Surface after Its Contact with the In-Ga-As-P Saturated Liquid -- _tAn Infrared Study of As2O3 Glasses -- _tElectron Microscope and Electron Diffraction Studies of Amorphization Phenomena in Ge Implanted with Te Ions -- _tPhotobleaching Behaviours of Rhodamine 6G Diffused in Polymethyl Methacrylate and in the Copolymer of Methyl Methacrylate with Methacrylic Acid -- _tA Mechanism for Drag on Dislocations in Zinc -- _tGe and Au Profiles in GaAs Produced from AuGe Contacts and Studied by SIMS -- _tThe EBIC Contrast of Dislocation Slip Planes in Silicon -- _tThe Magnetic Properties of l^TI^ ^Se Solid Solution -- _tMagnetic Properties of the FexCo 1-x Cr2S4(0 <x <1) System -- _tInitial Permeability of Amorphous Films with Multilayered Structure -- _tThe Mossbauer Effect and Magnetic Susceptibilities in Ga2Se3:57Fe Single Crystals -- _tEffect of Scandium Ions on Magnetic Properties of Dysprosium Orthoferrite -- _tOn the Role of Cu Atoms on the Behaviour of Domain Wall-Dislocation Interaction in Ni-Cu Alloy -- _tEnergy Band Diagrams, of Cu2S-ZnxCd 1-x S (0 ≤ x ≤ 1)Heterojunctions -- _tThermoluminescence Studies of CaS Single Crystals in the Temperature Range 8 to 2 75 K -- _tTwo Stimulated Emission 4F 3/2 ->4I 11/2.13/2 Channels of Nd 3+ Ions in Crystals of the CaF2-ScF3 System -- _tOn the Electrical Transport Phenomena in Thin Wires -- _tPhotoconductivity of Flash Evaporated CuInSe2 Thin Films -- _tDielectric Properties of HbCl-Single Crystals -- _tPre-Printed Titles |
| 506 | 0 |
_arestricted access _uhttp://purl.org/coar/access_right/c_16ec _fonline access with authorization _2star |
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| 530 | _aIssued also in print. | ||
| 538 | _aMode of access: Internet via World Wide Web. | ||
| 546 | _aIn English. | ||
| 588 | 0 | _aDescription based on online resource; title from PDF title page (publisher's Web site, viewed 01. Dez 2022) | |
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| 856 | 4 | 0 | _uhttps://doi.org/10.1515/9783112501764 |
| 856 | 4 | 0 | _uhttps://www.degruyter.com/isbn/9783112501764 |
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